In recent years, handheld and portable terahertz instruments have been in rapid development for various applications ranging from non-destructive testing to biomedical imaging and sensing. For instance, we have deployed our Portable Handheld Spectral Reflection (PHASR) Scanners for in vivo full-spectroscopic imaging of skin burns in large animal models in operating room settings. In this paper, we debut the polarimetric version of the PHASR Scanner, and describe a generalized calibration technique to map the spatial and spectral dependence of the Jones matrix of an imaging scanner across its field of view. Our design is based on placement of two orthogonal photoconductive antenna (PCA) detectors separated by a polarizing beam splitter in the PHASR Scanner housing. We show that as few as three independent measurements of a well-characterized polarimetric calibration target are sufficient to determine the polarization state of the incident beam at the sample location, as well as to extract the Jones propagation matrix from the sample location to the detectors. We have tested the accuracy of our scanner by validating polarimetric measurements obtained from a birefringent crystal rotated to various angles, as compared to the theoretically predicted response of the sample. This new version of our PHASR scanner can be used for high-speed imaging and investigation of heterogeneity of polarization-sensitive samples in the field.

Regular wave patterns were created by a 2 kV gallium ion on Si(111) monocrystals at incidence angles between 60° and 80° with respect to the surface normal. The characteristic wavelength and surface roughness of the structured surfaces were determined to be between 35-75 nm and 0.5-2.5 nm. The local slope distribution of the created periodic structures was also studied. These topography results were compared with the predictions of the Bradley-Harper model. The amorphised surface layers were investigated by a spectroscopic ellipsometer. According to the results, the amorphised thicknesses were changed in the range of 8 nm to 4 nm as a function of ion incidence angles. The reflectance of the structured surfaces was simulated using ellipsometric results and measured with a reflectometer. Based on the spectra, a controlled modification of reflectance within 45% and 50% can be achieved on Si(111) at 460 nm wavelength. According to the measured results, the characteristic sizes (periodicity and amplitude) and optical property of silicon can be fine-tuned by low-energy focused ion irradiation at the given interval of incidence angles.

Monolayer materials typically display intriguing temperature-dependent dielectric and optical properties, which are crucial for improving the structure and functionality of associated devices. Due to its unique photoelectric capabilities, monolayer WSe2 has recently received a lot of attention in the fields of atomically thin electronics and optoelectronics. In this work, we focus on the evolution of the temperature-dependent dielectric function (ε = ε1 + i ε2) of monolayer WSe2 over energies from 0.74 to 6.40 eV and temperatures from 40 to 350 K. We analyze the second derivatives of ε with respect to energy to accurately locate the critical points (CP). The dependence of the observed CP energies on temperature is consistent with the alternative domination of the declining exciton binding energy as the temperature increases.

In this study, an optical investigation in a wide spectral range of polymer-like (SiOxCyHz) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) is presented. The primary focus is on assessing the homogeneity of the grown films. Within the PECVD, it is possible to alter the properties of the deposited material by continually adjusting deposition process parameters and hence allow for the growth of inhomogeneous layers. However, as shown in this study, the growth of homogeneous layers could be similarly challenging. This challenge is especially pronounced at the beginning of the deposition process, where it is necessary to consider the influence of the substrate among other factors, as even slight variations in the deposition conditions can lead to the formation of inhomogeneous layers. Several series of polymer-like thin films were deposited onto silicon substrates with the goal of producing homogeneous layers, i.e. all deposition parameters were held constant. These samples were optically characterized with a special interest in homogeneity, especially at the beginning of the growth. It was found that initial inhomogeneous growth is always present. The thickness of the initial inhomogeneous part was found to be surprisingly large.

Polyethylene terephthalate (PET) films are the subject of intensive research because of great interest in using them in applications, especially in medicine. From an optical point of view, PET films with a low degree of stretching can be considered uniaxial materials, for which the determination of the linear birefringence and its dispersion is very important. Two methods were applied here for the estimation of these parameters: the ellipsometric method and the channeled spectra method. The ellipsometric method uses monochromatic radiation; therefore, the linear birefringence of the PET films is determined for a given value of the radiation wavelength. The channeled spectra method allows for the estimation of the linear birefringence and its dispersion for a large range of wavelengths in the visible spectrum. A decrease in both parameters with the increase in the wavelength was recorded. To evidence the microstructure of PET films and the conformational changes induced by elongation and to evaluate the degree of orientation, a polarized infrared spectral study in attenuated total reflection (ATR-FTIR) mode was performed. The dichroic ratio (between the absorbance measured with linearly polarized radiation parallel and orthogonal relative to the stretching direction, respectively) and the ATR absorbance ratio for the machine direction (MD) and transversal direction (TD) configurations both for the stretched and unstretched PET samples were measured.

In this work, we discuss the precision of the effective medium approximation (EMA) model in the data analysis of spectroscopic ellipsometry (SE) for solid materials with micro-rough surfaces by drawing the regime map. The SE parameters ψ (amplitude ratio) and Δ (phase difference) of the EMA model were solved by rigorous coupled-wave analysis. The electromagnetic response of the actual surfaces with micro roughness was simulated by the finite-difference time-domain method, which was validated by the experimental results. The regime maps associated with the SE parameters and optical constants n (refractive index) and k (extinction coefficient) of the EMA model were drawn by a comparison of the actual values with the model values. We find that using EMA to model micro-rough surfaces with high absorption can result in a higher precision of the amplitude ratio and extinction coefficient. The precisions of ψ, Δ, n and k increase as the relative roughness σ/λ (σ: the root mean square roughness, λ: the incident wavelength) decreases. The precision of ψ has an influence on the precision of k and the precision of Δ affects the precision of n. Changing σ alone has little effect on the regime maps of the relative errors of SE parameters and optical constants. A superior advantage of drawing the regime map is that it enables the clear determination as to whether EMA is able to model the rough surfaces or not.

To successfully construct semiconductor devices, the semiconductor industry must measure fundamental material parameters, especially when developing new materials; measure the quality of the material as it is grown; accurately determine the details of thin films, quantum wells, and other microstructures that control or affect device performance; and measure properties of the devices themselves. Properties that need to be determined, therefore, include basic band structure and transport parameters, such as energy gap values and carrier scattering times; the presence and concentration of impurities and defects; alloy parameters; layer thicknesses; the distribution of materials in complex structures; and many others. This process of determining a wide range of material, structural, and device parameters is called characterization. The semiconductor industry uses many characterization methods which draw on electrical, chemical, and other approaches. Among these, optical characterization techniques, defined as those using electromagnetic radiation from the ultraviolet to the far infrared, stand out because they arc nondestructive and require minimal sample preparation since no contacts arc needed. These features arc of great importance for production use or to examine finished devices. Another benefit is that, unlike electrical methods which require fixed contacts, optical techniques can give two- or three-dimensional maps of properties over the extent of a semiconductor wafer. The six techniques described in this paper (cllipsometry, infrared spectroscopy, microscopy, modulation spectroscopy, photolumincscence, and Raman scattering) were chosen because they are currently or potentially widely used in the industry; they measure a broad array of semiconductor parameters; and they operate in different regions of the electromagnetic spectrum. The discussion of each technique indicates the basic semiconductor quantities measured, gives the scientific basis of the technique, and indicates how the measurement is made. Illustrative examples from the literature are discussed in detail, showing applications to important semiconductor materials. More information can be obtained from the detailed list of references included.

Porous anodic aluminum oxide (PAAO), sometimes referred to as nanoporous anodic alumina, serves as a cost-effective template for nanofabrication in many fields of science and engineering. However, production of ultrathin PAAO membranes with precise thickness in the optical sub-wavelength range remains challenging because of difficulties regarding process control at the initial stage of anodic oxidation. In this study, we demonstrate a technique for consistently manufacturing PAAO with the targeted thickness. An electrochemical cell with an optical window was designed for reflectance spectroscopy of PAAO during anodization. Real-time fitting of spectra to a transfer-matrix model enabled continuous monitoring of the thickness growth of the PAAO layer. Automation software was designed to terminate the anodization process at preset PAAO thickness values. While the concept was illustrated using the widely used method of anodization in a 0.3 M oxalic acid electrolyte with a 40 V potential, it can be readily customized for other protocols. PAAO layers with effective thickness below 300 nm could be produced with a few nanometers accuracy using single-crystal aluminum substrates. The results were confirmed using spectroscopic ellipsometry. The method for controlling the thickness during anodization eliminates the necessity of sample sectioning for electron microscopy and is particularly valuable for the small-scale production of PAAO-based functional optical coatings.

For the first time, organic light-emitting diodes (OLEDs) based on bis(8-hydroxyquinoline) zinc with a styryl group (ZnStq) dispersed in poly(N-vinylcarbazole) matrix (ZnStq_R:PVK, where R = H, Cl, OCH3) were fabricated. The ZnStq_R:PVK films made via the spin-coating method were used as the active layer in these devices. The produced OLEDs showed strong electroluminescence with yellow emissions at 590, 587 and 578 nm for the ZnStq_H:PVK, ZnStq_Cl:PVK and ZnStq_OCH3:PVK, respectively. For all the studied thin films, the main photoluminescence emission bands were observed between 565 and 571 nm. The OLED with the ZnStq_OCH3:PVK layer with a narrow electroluminescence spectrum was found to have sufficient color purity to produce ultra-high-resolution displays with reduced power consumption (full width at half maximum of 59 nm, maximum brightness of 2244 cd/m2 and maximum current efficiency of 1.24 cd/A, with a turn-on voltage of 6.94 V and a threshold voltage of 7.35 V). To characterize the photophysical properties of the active layer, the ZnStq_R:PVK layers samples were additionally deposited on glass and silicon substrates. We found that the obtained results predestine ZnStq_R:PVK layers for use in the lighting industry in the future.

The ellipsometric analyses reported in this paper present a novelty by bringing an in-depth optical investigation of some ternary organic blends. This study focuses on the tunability and control of the relative permittivity of active layers by varying the weight ratio of blended materials spin-coated as thin films. To investigate this, an extensive approach based on spectroscopic ellipsometry was conducted on ternary blend (D:A1:A2) thin films, involving a donor [D = chlorinated conjugated polymer (PBDB-T-2Cl)] and two acceptor materials [A1 = a non-fullerene (ITIC-F) and A2 = a fullerene (PCBM)]. The refractive index constitutes a key parameter that exposes insights into the feasibility of photovoltaic cells by predicting the trajectory of light as it transits the device. In this term, higher obtained refractive indexes support higher absorption coefficients. Notably, the dielectric constant can be rigorously tuned and finely calibrated by modest variations in the quantity of the third element, resulting in considerable modifications. Moreover, the inclusion of fullerene in blends, as the third element, results in a smooth topographical profile, further refining the surface of the film. From an electrical point of view, the ternary blends outperform the polymer thin films. The synergistic interaction of constituents emphasizes their potential to enhance solar conversion devices.