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Abstract：
Regular wave patterns were created by a 2 kV gallium ion on Si(111) monocrystals at incidence angles between 60° and 80° with respect to the surface normal. The characteristic wavelength and surface roughness of the structured surfaces were determined to be between 35-75 nm and 0.5-2.5 nm. The local slope distribution of the created periodic structures was also studied. These topography results were compared with the predictions of the Bradley-Harper model. The amorphised surface layers were investigated by a spectroscopic ellipsometer. According to the results, the amorphised thicknesses were changed in the range of 8 nm to 4 nm as a function of ion incidence angles. The reflectance of the structured surfaces was simulated using ellipsometric results and measured with a reflectometer. Based on the spectra, a controlled modification of reflectance within 45% and 50% can be achieved on Si(111) at 460 nm wavelength. According to the measured results, the characteristic sizes (periodicity and amplitude) and optical property of silicon can be fine-tuned by low-energy focused ion irradiation at the given interval of incidence angles.
摘要：
由相对于表面法线的入射角在60°至80°之间的Si（111）单晶上的2kV镓离子产生规则的波型。结构化表面的特征波长和表面粗糙度被确定为在35-75nm和0.5-2.5nm之间。还研究了所创建的周期性结构的局部斜率分布。将这些地形结果与Bradley-Harper模型的预测进行了比较。通过光谱椭偏仪研究了无定形的表面层。根据结果,非晶化的厚度作为离子入射角的函数在8nm至4nm的范围内变化。使用椭偏结果模拟结构化表面的反射率，并用反射计进行测量。根据光谱，在460nm波长的Si(111)上可以实现在45%和50%内的反射率的受控改变。根据测量结果,硅的特征尺寸（周期性和振幅）和光学性质可以通过低能聚焦离子辐照在给定的入射角间隔进行微调。
