%0 Journal Article
%T Investigation of Ripple Formation on Surface of Silicon by Low-Energy Gallium Ion Bombardment.
%A Windisch M
%A Selmeczi D
%A Vida Á
%A Dankházi Z
%J Nanomaterials (Basel)
%V 14
%N 13
%D 2024 Jun 29
%M 38998731
%F 5.719
%R 10.3390/nano14131124
%X Regular wave patterns were created by a 2 kV gallium ion on Si(111) monocrystals at incidence angles between 60° and 80° with respect to the surface normal. The characteristic wavelength and surface roughness of the structured surfaces were determined to be between 35-75 nm and 0.5-2.5 nm. The local slope distribution of the created periodic structures was also studied. These topography results were compared with the predictions of the Bradley-Harper model. The amorphised surface layers were investigated by a spectroscopic ellipsometer. According to the results, the amorphised thicknesses were changed in the range of 8 nm to 4 nm as a function of ion incidence angles. The reflectance of the structured surfaces was simulated using ellipsometric results and measured with a reflectometer. Based on the spectra, a controlled modification of reflectance within 45% and 50% can be achieved on Si(111) at 460 nm wavelength. According to the measured results, the characteristic sizes (periodicity and amplitude) and optical property of silicon can be fine-tuned by low-energy focused ion irradiation at the given interval of incidence angles.