{Reference Type}: Journal Article
{Title}: Investigation of Ripple Formation on Surface of Silicon by Low-Energy Gallium Ion Bombardment.
{Author}: Windisch M;Selmeczi D;Vida Á;Dankházi Z;
{Journal}: Nanomaterials (Basel)
{Volume}: 14
{Issue}: 13
{Year}: 2024 Jun 29
{Factor}: 5.719
{DOI}: 10.3390/nano14131124
{Abstract}: Regular wave patterns were created by a 2 kV gallium ion on Si(111) monocrystals at incidence angles between 60° and 80° with respect to the surface normal. The characteristic wavelength and surface roughness of the structured surfaces were determined to be between 35-75 nm and 0.5-2.5 nm. The local slope distribution of the created periodic structures was also studied. These topography results were compared with the predictions of the Bradley-Harper model. The amorphised surface layers were investigated by a spectroscopic ellipsometer. According to the results, the amorphised thicknesses were changed in the range of 8 nm to 4 nm as a function of ion incidence angles. The reflectance of the structured surfaces was simulated using ellipsometric results and measured with a reflectometer. Based on the spectra, a controlled modification of reflectance within 45% and 50% can be achieved on Si(111) at 460 nm wavelength. According to the measured results, the characteristic sizes (periodicity and amplitude) and optical property of silicon can be fine-tuned by low-energy focused ion irradiation at the given interval of incidence angles.