Organosilicate glass (OSG) films are a critical component in modern electronic devices, with their electrical properties playing a crucial role in device performance. This comprehensive review systematically examines the influence of chemical composition, vacuum ultraviolet (VUV) irradiation, and plasma treatment on the electrical properties of these films. Through an extensive survey of literature and experimental findings, we elucidate the intricate interplay between these factors and the resulting alterations in electrical conductivity, dielectric constant, and breakdown strength of OSG films. Key focus areas include the impact of diverse organic moieties incorporated into the silica matrix, the effects of VUV irradiation on film properties, and the modifications induced by various plasma treatment techniques. Furthermore, the underlying mechanisms governing these phenomena are discussed, shedding light on the complex molecular interactions and structural rearrangements occurring within OSG films under different environmental conditions. It is shown that phonon-assisted electron tunneling between adjacent neutral traps provides a more accurate description of charge transport in OSG low-k materials compared to the previously reported Fowler-Nordheim mechanism. Additionally, the quality of low-k materials significantly influences the behavior of leakage currents. Materials retaining residual porogens or adsorbed water on pore walls show electrical conductivity directly correlated with pore surface area and porosity. Conversely, porogen-free materials, developed by Urbanowicz, exhibit leakage currents that are independent of porosity. This underscores the critical importance of considering internal defects such as oxygen-deficient centers (ODC) or similar entities in understanding the electrical properties of these materials.

Metal halide perovskite CsPbI3 quantum dots (QDs) have sparked widespread research due to their intriguing optoelectronic. However, the CsPbI3 QDs undergo inevitable aging and luminescence quenching caused by the weak binding ability of oleate (OA-)/oleylammonium (OAm+), hindering further practical application. Herein, we have realized ultrafast rejuvenation of the aged CsPbI3 QDs that have lost their photoluminescence performance based on a 1-dodecanethiol (DDT) surface ligand to restore the outstanding red light emission with a high photoluminescence quantum yield (PLQY) from 25 to 90%. Furthermore, CsPbI3 QDs with DDT surface treatment maintain a cubic phase and high PLQY value even after 35 days. The DDT ligands can form a strong bond with Pb2+ and passivate I- ion vacancies, enhancing radiative recombination efficiency and thereby improving the PLQY of the QDs. The stable yet easily accessible surface of the DDT-capped CsPbI3 QDs was successfully employed as white LEDs and exhibited considerable enhanced luminous performance, suggesting promising application in solid-state lighting fields.

A quantum prism, a new structure, consisting of many quantum wires with a diameter that gradually decreases from the base to the top, is the focus of our research. This distribution of quantum wires leads to a dispersive emitted spectrum. The red edge of the spectrum is determined by the band gap width of the bulk semiconductor, and the blue edge is determined by the quantum size of the excitons at the top of the prism. The PL spectrum of the silicon prismatic sample was excited by weak and strong light absorption. At weak absorption (hνex = 1.2 eV), the PL spectrum is located in the visible part of the spectrum, from 1.4 eV to 1.9 eV, with an energy higher than the band gap of the Si crystal. Such a \"blue shift\" of PL spectra by 0.7 eV is characteristic of the quantum confinement effect. It is a rainbow spectrum with an optical upconversion. The quantum prism is a new type of nano light source, as it replaces two elements in a conventional spectrometer: a light source and a dispersive element. These features enable to create a nano-spectrometer for measuring the absorption spectrum of individual molecules or viruses.

In this study, fully aromatic polyether sulfones were developed, bearing blue, yellow, and orange-red π-conjugated semiconducting units. Carbazole-, anthracene-, and benzothiadiazole-based fluorophores are copolymerized with a diphenylsulfone moiety. A diphenylpyridine comonomer was additionally utilized, acting as both a solubilizing unit and a weak blue fluorescent group. Using this rationale, fluorescent polyarylethers with high molecular weights, up to 70 kDa, were developed, showing film formation ability and high thermal stability, while preserving excellent solubility in common organic, nonvolatile, and nonchlorinated solvents. Fine-tuning of the emission color was achieved through subtle changes of the comonomers\' type and ratio. Single-chromophore-bearing copolymers emitted in the blue or the yellow region of the visible spectrum, while the dual-chromophore-bearing terpolymers emitted throughout the visible spectrum, resulting in white light emission. Solutions of 20 wt% in polar aprotic solvents at ambient conditions allowed the deposition of fluorescent copolyethers and printing from non-chlorinated solvents. All polyethers were evaluated for their structural and optoelectronic properties, and selected copolymers were successfully used in the emitting layer (EML) of organic light-emitting diode (OLED) devices, using either rigid or flexible substrates. Remarkable color stability was displayed in all cases for up to 15 V of bias voltage. The Commission Internationale de L\'Eclairage (CIE) of the fabricated devices is located in the blue (0.16, 0.16), yellow (0.44, 0.50), or white region of the visible spectrum (0.33, 0.38) with minimal changes according to the ratio of the comonomers. The versatile methodology toward semiconducting polyethersulfones for polymer light-emitting diodes (PLEDs) developed herein led to the scaled-up production of luminescent polymers of up to 25 g of high-molecular-weight single batches, demonstrating the effectiveness of this approach as a straightforward tool to facilitate the synthesis of flexible and printable EMLs for large-area PLED coverage.

Cesium lead halide perovskite (CsPbX3; X = Cl, Br, I) nanocrystals showing intense band-edge emission and high photoluminescence quantum yield are known to be a potential candidate for application in optoelectronic devices. However, controlling toxicity due to the presence of Pb2+ in lead-based halide perovskites is a major challenge for the environment that needs to be tackled cautiously. In this work, we have partially replaced Pb2+ with Mn2+ ions in the CsPb(Cl/Br)3 nanocrystals and investigated their impact on the structural and optical properties. The Rietveld refinement shows that CsPbCl2Br nanocrystals possess a cubic crystal structure with Pm3 ̅m space group, the Mn2+ doping results in the contraction of the unit cell. The CsPb(Cl/Br)3: Mn nanocrystals show a substantial change in the optical properties with an additional emission band at ~588 nm through a d-d transition, changing the emission color from blue to pink. Here, a didodecyldimethylammonium bromide (DDAB) ligand that triggers both anion and ligand exchange in the CsPb(Cl/Br)3: Mn nanocrystals have been used to regulate the exchange reaction and tune the emission color of halide perovskites by changing the peak position and the PL intensities of band-edge and Mn2+ defect states. We have also shown that oleic acid helps in the desorption of oleylamine capping from the CsPb(Cl/Br)3: Mn nanocrystal surfaces and DDAB, resulting in the substitution of Cl¯ with Br¯ as well as provides capping with shorter branched length ligand which led to increase in the overall PL intensity by many folds.

Organic-inorganic hybrid manganese(II) halides (OIMnHs) have garnered tremendous interest across a wide array of research fields owing to their outstanding optical properties, abundant structural diversity, low-cost solution processibility, and low toxicity, which make them extremely suitable for use as a new class of luminescent materials for various optoelectronic applications. Over the past years, a plethora of OIMnHs with different structural dimensionalities and multifunctionalities such as efficient photoluminescence (PL), radioluminescence, circularly polarized luminescence, and mechanoluminescence have been newly created by judicious screening of the organic cations and inorganic Mn(II) polyhedra. Specifically, through precise molecular and structural engineering, a series of OIMnHs with near-unity PL quantum yields, high anti-thermal quenching properties, and excellent stability in harsh conditions have been devised and explored for applications in light-emitting diodes (LEDs), X-ray scintillators, multimodal anti-counterfeiting, and fluorescent sensing. In this review, the latest advancements in the development of OIMnHs as efficient light-emitting materials are summarized, which covers from their fundamental physicochemical properties to advanced optoelectronic applications, with an emphasis on the structural and functionality design especially for LEDs and X-ray detection and imaging. Current challenges and future efforts to unlock the potentials of these promising materials are also envisioned.

The optical properties of the direct-bandgap transition metal dichalcogenides (TMDCs) MoS2and WS2are heavily influenced by their atomic defect structure and substrate interaction. In this work we use low-voltage chromatic and spherical aberration (CC/CS)-corrected high-resolution transmission electron microscopy to simultaneously create and image chalcogen vacancies in TMDCs. However, correlating the defect structure, produced and analyzed using transmission electron microscopy (TEM), with optical spectroscopy often presents challenges because of very different fields of view and sample platforms involved. Here we employ a reverse transfer technique to transfer electron-irradiated single-layer MoS2and WS2from the TEM grid to various substrates for subsequent optical examination. The dynamics of defect creation are studied in atomic resolution on a separate sample, which allows to apply the derived statistics to larger irradiated areas on the other samples. The intensity of both the defect-bound exciton peak in photoluminescence (PL) and the defect-inducedLA(M) mode in Raman spectra increase with defect density. The best substrates for defect-density determination by optical spectroscopy are polystyrene for PL and SiC and Si/SiO2for Raman spectroscopy. These investigations represent an important step towards the quantification of defects using solely optical spectroscopy, paving the way for fast, reliable, and automatable optical quality control of optoelectronic devices.

Broadband near-infrared (NIR) phosphors are crucial components of NIR phosphor-converted light-emitting diode (pc-LED) sources for various smart spectroscopy applications. However, developing an efficient, tunable, and inexpensive broadband NIR phosphor with sufficient spectral coverage remains a great challenge. In this work, a cubic phosphate K2AlTi(PO4)3 with highly structural rigidity was chosen as host material for Cr3+ substitution to create an efficient NIR emission. Synthesizing this compound, the obtained material exhibits a broadband NIR emission covering 700-1200 nm with a peak wavelength ranging from 820 to 860 nm depending on the Cr3+ substituting concentration. The Cr3+ concentration optimized sample possesses a photoluminescence quantum yield (PLQY) of 76.4% with an emission peak centered at 857 nm and a full width at half-maximum (fwhm) of 184 nm under 464 nm exaction, demonstrating an efficient and relatively long-wavelength NIR emission with wide spectral coverage. This broadband NIR emission is mainly derived from a single kind of emission center deduced from spectral analysis, luminescence dynamics, and first-principle calculations. Using this material, the fabricated NIR pc-LED device presents an excellent NIR output power and NIR photoelectric conversion efficiency, making this material attractive in practical applications of night-vision and bioimaging. Therefore, this work not only provides a broadband NIR material with superiorities of low cost, high efficiency, wide-range tunability, wide spectral coverage, and relatively long-wavelength NIR emission for spectroscopy applications but also highlights some clues to discover this kind of materials.

Polymer-metal complexes (PMCs) based on poly(2,2\'-bipyridine-4,4\'-dicarboxamide-co-polydimethylsiloxanes) with cyclometalated di(2-phenylpyridinato-C2,N\')iridium(III) fragments and cross-linked by Zn2+ (Zn[Ir]-BipyPDMSs) or Ir3+ (Ir[Ir]-BipyPDMSs) represent flexible, stretchable, phosphorescent, and self-healing molecular oxygen sensors. PMCs provide strong phosphorescence at λem = 595-605 nm. Zn[Ir]-BipyPDMS with PDMS chain length of Mn = 5000 has the highest quantum yield of 9.3% and is a molecular oxygen sensor at different O2 concentrations (0-100 vol%) compared to Ir[Ir]-BipyPDMSs. A Stern-Volmer constant is determined for Zn[Ir]-BipyPDMS as KSV = 0.014%-1, which is similar to the reported oxygen-sensitive iridium(III) complexes. All synthesized PMCs exhibit high elongation at break (up to 1100%) and self-healing efficiency (up to 99%).

An exclusive set of Dy3+ ions incorporated Boro-phosphate glasses with different modifier ions like Sr, Mg, Ba, Li and Zn have been manufactured by quenching the melts. The optical behavior of the present glasses was explored through absorption, luminescence & lifetime studies. Physical parameters such as refractive index (RI) and density have been calculated and utilized to evaluate other parameters. The JO parameters exhibited the style Ω2 > Ω4 > Ω6, and the luminescence spectra exhibited three strong transitions; 4F9/2→6H15/2 (magnetic dipole), 4F9/2→6H13/2 (electric dipole) and 4F9/2→6H11/2 (magnetic dipole). Lasing action characteristics such as emission cross-section, transition probability and branching ratio were projected from the JO parameters and oscillator strength values. The color chromaticity coordinates were determined using the CIE color chromaticity diagram. Lifetime analyses have been performed to comprehend the decay performance of the BPNfDy:X glasses.