PDF(Pubmed)
Abstract：
Organosilicate glass (OSG) films are a critical component in modern electronic devices, with their electrical properties playing a crucial role in device performance. This comprehensive review systematically examines the influence of chemical composition, vacuum ultraviolet (VUV) irradiation, and plasma treatment on the electrical properties of these films. Through an extensive survey of literature and experimental findings, we elucidate the intricate interplay between these factors and the resulting alterations in electrical conductivity, dielectric constant, and breakdown strength of OSG films. Key focus areas include the impact of diverse organic moieties incorporated into the silica matrix, the effects of VUV irradiation on film properties, and the modifications induced by various plasma treatment techniques. Furthermore, the underlying mechanisms governing these phenomena are discussed, shedding light on the complex molecular interactions and structural rearrangements occurring within OSG films under different environmental conditions. It is shown that phonon-assisted electron tunneling between adjacent neutral traps provides a more accurate description of charge transport in OSG low-k materials compared to the previously reported Fowler-Nordheim mechanism. Additionally, the quality of low-k materials significantly influences the behavior of leakage currents. Materials retaining residual porogens or adsorbed water on pore walls show electrical conductivity directly correlated with pore surface area and porosity. Conversely, porogen-free materials, developed by Urbanowicz, exhibit leakage currents that are independent of porosity. This underscores the critical importance of considering internal defects such as oxygen-deficient centers (ODC) or similar entities in understanding the electrical properties of these materials.
摘要：
有机硅酸盐玻璃(OSG)薄膜是现代电子器件中的重要组成部分,它们的电性能在器件性能中起着至关重要的作用。这篇全面的综述系统地研究了化学成分的影响，真空紫外线（VUV）照射，和等离子体处理对这些薄膜的电性能。通过对文献和实验结果的广泛调查，我们阐明了这些因素之间复杂的相互作用，以及由此产生的电导率变化，介电常数,OSG薄膜的击穿强度。主要关注领域包括掺入二氧化硅基质中的各种有机部分的影响，VUV辐照对薄膜性能的影响，以及各种等离子体处理技术引起的修饰。此外，讨论了控制这些现象的潜在机制，在不同环境条件下OSG薄膜中发生的复杂分子相互作用和结构重排的发光。表明，与先前报道的Fowler-Nordheim机制相比，相邻中性陷阱之间的声子辅助电子隧穿可以更准确地描述OSG低k材料中的电荷传输。此外,低k材料的质量显着影响泄漏电流的行为。在孔壁上保留残留致孔剂或吸附水的材料显示出与孔表面积和孔隙率直接相关的电导率。相反，无致孔剂材料,由Urbanowicz开发，表现出与孔隙率无关的泄漏电流。这强调了在理解这些材料的电特性时考虑内部缺陷(例如缺氧中心(ODC)或类似实体)的关键重要性。
