Cheap and efficient carbon electrodes (CEs) for energy storage systems (ESS) such as supercapacitors (SCs) and batteries are an increasing priority issue, among other things, due to a globally increasing share of intermittent electricity production (solar and wind) and electrification of transport. The increasing consumption of portable and non-portable electronic devices justifies research that enables environmentally and economically sustainable production (materials, processing techniques, and product design) of products with a high electrochemical performance at an acceptable cost. Among all the currently explored CEs materials, biomass-based activated carbons (AC) present enormous potential due to their availability and low-cost, easy processing methods, physicochemical stability, and methods for self-doping. Nitrogen doping methods in CEs for SCs have been demonstrated to enhance its conductivities, surface wettability, and induced pseudocapacitance effect, thereby delivering improved energy/power densities with versatile properties. Herein, a short review is presented, focusing on the different types of natural carbon sources for preparing CEs towards the fabrication of SCs with high electrochemical performance. The influences of ACs\' pore characteristics (micro and mesoporosity) and nitrogen doping on the overall electrochemical performance (EP) are addressed.

Methods for synthesizing nitrogen-doped graphene-like materials have attracted significant attention among the scientific community because of the possible applications of such materials in electrochemical devices such as fuel cells, supercapacitors and batteries, as well as nanoelectronics and sensors. The aim of this paper is to review recent advances in this scientific niche. The most common synthesis technique is nitridization of as-deposited graphene or graphene-containing carbon mesh using a non-equilibrium gaseous plasma containing nitrogen or ammonia. A variety of chemical bonds have been observed, however, it is still a challenge how to ensure preferential formation of graphitic nitrogen, which is supposed to be the most favorable. The nitrogen concentration depends on the processing conditions and is typically few at.%; however, values below 1 and up to 20 at.% have been reported. Often, huge amounts of oxygen are found as well, however, its synergistic influence on N-doped graphene is not reported. The typical plasma treatment time is several minutes. The results reported by different authors are discussed, and future needs in this scientific field are summarized. Some aspects of the characterization of graphene samples with X-ray photoelectron spectroscopy and Raman spectroscopy are presented as well.

Doping of nitrogen is a promising strategy to modulate chemical, electronic, and structural functionalities of graphene (G)and graphene quantum dots (GQDs) for their outstanding properties in energy and environmental applications.This paper reviews various synthesis approaches of nitrogen-doped graphene (N-G) and nitrogen-doped graphene quantum dots (N-GQDs).;Thermal, ultrasonic, solvothermal, hydrothermal, and electron-beam methods have been applied to synthesize N-G and N-GQDs.These nitrogen-doped carbon materials are characterized to obtain their structural configurations in order to achieve better performance in their applications compared to only either graphene or graphene quantum dots.Both N-G and N-GQDs may be converted into functional materials by integrating with other compounds such as metal oxides/nitrides, polymers, and semiconductors.These functional materials demonstrate superior performance over N-G and N-GQDs materials.Examples of applications of N-G and N-GQDs include supercapacitors, batteries, sensors, fuel cells, solar cells, and photocatalyst.

In this review we highlight recent theoretical and experimental work on sublattice asymmetric doping of impurities in graphene, with a focus on substitutional nitrogen dopants. It is well known that one current limitation of graphene in regards to its use in electronics is that in its ordinary state it exhibits no band gap. By doping one of its two sublattices preferentially it is possible to not only open such a gap, which can furthermore be tuned through control of the dopant concentration, but in theory produce quasi-ballistic transport of electrons in the undoped sublattice, both important qualities for any graphene device to be used competetively in future technology. We outline current experimental techniques for synthesis of such graphene monolayers and detail theoretical efforts to explain the mechanisms responsible for the effect, before suggesting future research directions in this nascent field.