Abstract：
We report the observation of a magnetocapacitance effect at the interface between Ni and epitaxial nonpolar BiInO3 thin films at room temperature. A detailed surface study using X-ray photoelectron spectroscopy (XPS) reveals the formation of an intermetallic Ni-Bi alloy at the Ni/BiInO3 interface and a shift in the Bi 4f and In 3d core levels to higher binding energies with increasing Ni thickness. The latter infers band bending in BiInO3, corresponding to the formation of a p-type Schottky barrier. The current-voltage characteristics of the Ni/BiInO3/(Ba,Sr)RuO3/NdScO3(110) heterostructure show a significant dependence on the applied magnetic field and voltage cycling, which can be attributed to voltage-controlled band bending and spin-polarized charge accumulation in the vicinity of the Ni/BiInO3 interface. The magnetocapacitance effect can be realized at room temperature without involving multiferroic materials.
摘要：
我们报告了在室温下在Ni和外延非极性BiInO3薄膜之间的界面处观察到的磁电容效应。使用X射线光电子能谱（XPS）进行的详细表面研究表明，在Ni/BiInO3界面处形成了金属间Ni-Bi合金，并且随着Ni的增加，Bi4f和In3d核能级向更高的结合能转移厚度。后者推断BiInO3中的能带弯曲，对应于p型肖特基势垒的形成。Ni/BiInO3/（Ba，Sr）RuO3/NdScO3（110）异质结构显示出对施加的磁场和电压循环的显着依赖性，这可以归因于Ni/BiInO3界面附近的电压控制带弯曲和自旋极化电荷积累。磁电容效应可以在室温下实现，而不涉及多铁性材料。
