{Reference Type}: Journal Article
{Title}: Magnetocapacitance at the Ni/BiInO3 Schottky Interface.
{Author}: Viswan G;Wang K;Streubel R;Hong X;Valanoor N;Sando D;Dowben PA;
{Journal}: ACS Appl Mater Interfaces
{Volume}: 16
{Issue}: 3
{Year}: 2024 Jan 24
{Factor}: 10.383
{DOI}: 10.1021/acsami.3c13478
{Abstract}: We report the observation of a magnetocapacitance effect at the interface between Ni and epitaxial nonpolar BiInO3 thin films at room temperature. A detailed surface study using X-ray photoelectron spectroscopy (XPS) reveals the formation of an intermetallic Ni-Bi alloy at the Ni/BiInO3 interface and a shift in the Bi 4f and In 3d core levels to higher binding energies with increasing Ni thickness. The latter infers band bending in BiInO3, corresponding to the formation of a p-type Schottky barrier. The current-voltage characteristics of the Ni/BiInO3/(Ba,Sr)RuO3/NdScO3(110) heterostructure show a significant dependence on the applied magnetic field and voltage cycling, which can be attributed to voltage-controlled band bending and spin-polarized charge accumulation in the vicinity of the Ni/BiInO3 interface. The magnetocapacitance effect can be realized at room temperature without involving multiferroic materials.