%0 Journal Article
%T Magnetocapacitance at the Ni/BiInO3 Schottky Interface.
%A Viswan G
%A Wang K
%A Streubel R
%A Hong X
%A Valanoor N
%A Sando D
%A Dowben PA
%J ACS Appl Mater Interfaces
%V 16
%N 3
%D 2024 Jan 24
%M 38193781
%F 10.383
%R 10.1021/acsami.3c13478
%X We report the observation of a magnetocapacitance effect at the interface between Ni and epitaxial nonpolar BiInO3 thin films at room temperature. A detailed surface study using X-ray photoelectron spectroscopy (XPS) reveals the formation of an intermetallic Ni-Bi alloy at the Ni/BiInO3 interface and a shift in the Bi 4f and In 3d core levels to higher binding energies with increasing Ni thickness. The latter infers band bending in BiInO3, corresponding to the formation of a p-type Schottky barrier. The current-voltage characteristics of the Ni/BiInO3/(Ba,Sr)RuO3/NdScO3(110) heterostructure show a significant dependence on the applied magnetic field and voltage cycling, which can be attributed to voltage-controlled band bending and spin-polarized charge accumulation in the vicinity of the Ni/BiInO3 interface. The magnetocapacitance effect can be realized at room temperature without involving multiferroic materials.