神经元中普遍存在的电压门控离子通道通过响应跨膜电位在产生动作电位和信息传递中起重要作用。用离子作为电荷载体制造生物启发的离子晶体管对于实现神经启发的设备和大脑喜欢的计算至关重要。这里,我们报道了基于具有亚1nm层间通道的MXene膜的二维纳米流体离子晶体管。通过在MXene纳米流体上施加门控电压,将产生跨膜电位以激活离子晶体管,这类似于神经元细胞的跨膜电位,可以通过改变膜参数进行有效调节,例如,厚度,composition,和层间间距。对于对称MXene纳米流体,通过形成离子耗尽或积累区,可以实现~2000的高开/关比,取决于门控潜力的迹象。不对称PET/MXene复合纳米流体将离子晶体管从双极转变为单极,导致更敏感的栅极电压特性,具有560mV/decade的低亚阈值摆幅。此外,离子逻辑门电路,包括\"NOT\",\"NAND\",和“NOR”门,成功实现了神经形态信号处理,这提供了一条通往高度平行的有希望的途径,低能耗,和基于离子的类脑计算。
Voltage-gated ion channels prevalent in neurons play important roles in generating action potential and information transmission by responding to transmembrane potential. Fabricating bio-inspired ionic transistors with ions as charge carriers will be crucial for realizing neuro-inspired devices and brain-liking computing. Here, we reported a two-dimensional
nanofluidic ionic transistor based on a MXene membrane with sub-1 nm interlayer channels. By applying a gating voltage on the MXene
nanofluidic, a transmembrane potential will be generated to active the ionic transistor, which is similar to the transmembrane potential of neuron cells and can be effectively regulated by changing membrane parameters, e.g., thickness, composition, and interlayer spacing. For the symmetric MXene
nanofluidic, a high on/off ratio of ~2000 can be achieved by forming an ionic depletion or accumulation zone, contingent on the sign of the gating potential. An asymmetric PET/MXene-composited
nanofluidic transitioned the ionic transistor from ambipolar to unipolar, resulting in a more sensitive gate voltage characteristic with a low subthreshold swing of 560 mV/decade. Furthermore, ionic logic gate circuits, including the \"NOT\", \"NAND\", and \"NOR\" gate, were implemented for neuromorphic signal processing successfully, which provides a promising pathway towards highly parallel, low energy consumption, and ion-based brain-like computing.