In the future, DW memory will replace conventional storage memories with high storage capacity and fast read/write speeds. The only failure in DW memory arises from DW thermal fluctuations at pinning sites. This work examines, through calculations, the parameters that might help control DW thermal stability at the pinning sites. It is proposed to design a new scheme using a stepped area of a certain depth (d) and length (λ). The study reveals that DW thermal stability is highly dependent on the geometry of the pinning area (d and λ), magnetic properties such as saturation magnetization (Ms) and magnetic anisotropy energy (Ku), and the dimensions of the nanowires. For certain values of d and λ, DWs remain stable at temperatures over 500 K, which is beneficial for memory applications. Higher DW thermal stability is also achieved by decreasing nanowire thickness to less than 10 nm, making DW memories stable below 800 K. Finally, our results help to construct DW memory nanodevices with nanodimensions less than a 40 nm width and less than a 10 nm thickness with high DW thermal stability.

Spintronics, utilizing both the charge and spin of electrons, benefits from the nonvolatility, low switching energy, and collective behavior of magnetization. These properties allow the development of magnetoresistive random access memories, with magnetic tunnel junctions (MTJs) playing a central role. Various spin logic concepts are also extensively explored. Among these, spin logic devices based on the motion of magnetic domain walls (DWs) enable the implementation of compact and energy-efficient logic circuits. In these devices, DW motion within a magnetic track enables spin information processing, while MTJs at the input and output serve as electrical writing and reading elements. DW logic holds promise for simplifying logic circuit complexity by performing multiple functions within a single device. Nevertheless, the demonstration of DW logic circuits with electrical writing and reading at the nanoscale is still needed to unveil their practical application potential. In this review, we discuss material advancements for high-speed DW motion, progress in DW logic devices, groundbreaking demonstrations of current-driven DW logic, and its potential for practical applications. Additionally, we discuss alternative approaches for current-free information propagation, along with challenges and prospects for the development of DW logic.

Water oxidation on magnetic catalysts has generated significant interest due to the spin-polarization effect. Recent studies have revealed that the disappearance of magnetic domain wall upon magnetization is responsible for the observed oxygen evolution reaction (OER) enhancement. However, an atomic picture of the reaction pathway remains unclear, i.e., which reaction pathway benefits most from spin-polarization, the adsorbent evolution mechanism, the intermolecular mechanism (I2M), the lattice oxygen-mediated one, or more? Here, using three model catalysts with distinguished atomic chemistries of active sites, we are able to reveal the atomic-level mechanism. We found that spin-polarized OER mainly occurs at interconnected active sites, which favors direct coupling of neighboring ligand oxygens (I2M). Furthermore, our study reveals the crucial role of lattice oxygen participation in spin-polarized OER, significantly facilitating the coupling kinetics of neighboring oxygen radicals at active sites.

Magnetic domain wall (DW)-based logic devices offer numerous opportunities for emerging electronics applications allowing superior performance characteristics such as fast motion, high density, and nonvolatility to process information. However, these devices rely on an external magnetic field, which limits their implementation; this is particularly problematic in large-scale applications. Multiferroic systems consisting of a piezoelectric substrate coupled with ferromagnets provide a potential solution that provides the possibility of controlling magnetization through an electric field via magnetoelastic coupling. Strain-induced magnetization anisotropy tilting can influence the DW motion in a controllable way. We demonstrate a method to perform all-electrical logic operations using such a system. Ferromagnetic coupling between neighboring magnetic domains induced by the electric-field-controlled strain has been exploited to promote noncollinear spin alignment, which is used for realizing essential building blocks, including DW generation, propagation, and pinning, in all implementations of Boolean logic, which will pave the way for scalable memory-in-logic applications.

Recently, two-dimensional magnetic material has attracted attention worldwide due to its potential application in magnetic memory devices. The previous concept of domain walls driven by current pulses is a disordered motion. Further investigation of the mechanism is urgently lacking. Here, Fe3GeTe2, a typical high-Curie temperature (TC) two-dimensional magnetic material, is chosen to explore the magnetic domain dynamics by in situ Lorentz transmission electron microscopy experiments. It has been found that the stripe domain could be driven, compressed, and expanded by the pulses with a critical current density. Revealed by micromagnetic simulations, all the domain walls cannot move synchronously due to the competition between demagnetization energy and spin-transfer torque effect. In consideration of the reflection of high-frequency pulses, the disordered motion could be well explained together. The multiple stable states of the magnetic structure due to the weak exchange interaction in a two-dimensional magnet provides complex dynamic processes. Based on plenty of experiments, a cluster of domain walls could be more steady and move more synchronously under the drive of pulse current. The complication of domain wall motions presents a challenge in race track memory devices and two-dimensional magnetic material will be a better choice for application research.

We investigate the effects of high frequency strain on the depinning of magnetic domain walls in perpendicular anisotropy materials. Micron wide stripes of [Co(0.3 nm)/Pt(0.6 nm)]5are patterned between a pair of identical inter-digital transducers that generate high frequency (114.8 MHz) standing surface acoustic waves. We use magneto-optical Kerr effect microscopy to characterize the thermally-assisted depinning of domain walls at defect sites within the strips. Our results show that the excitation of the domain walls with surface acoustic waves results in an increase in their depinning probabilities by approximately a factor of 10. Our data are consistent with a model in which the magnetoelastic anisotropies induced by the acoustic waves modulate the energy barriers that pin the domain walls. These results suggest an alternative route to domain wall depinning in thin films and nanostructures and are relevant to the development of racetrack memories, where domain wall pinning can result in reduced velocities and non-deterministic motion.

Magnetic field-free, nonvolatile magnetic memory with low power consumption is highly desired in information technology. In this work, we report a current-controllable alignment of magnetic domain walls in a single layer La0.67Sr0.33MnO3 thin film with the threshold current density of 2 × 105 A/cm2 at room temperature. The vector relationship between current directions and domain-wall orientations indicates the dominant role of spin-orbit torque without an assistance of external magnetic field. Meanwhile, significant planar Hall resistances can be readout in a nonvolatile way before and after the domain-wall reorientation. A domain-wall-based magnetic random-access memory (DW-MRAM) prototype device has been proposed.

We present a detailed analysis of the in-plane magnetic vector configuration in head-to-head/tail-to-tail stripe domain patterns of nominal 5 µm width. The patterns have been created by He-ion bombardment induced magnetic patterning of a CoFe/IrMn3 exchange bias thin-film system. Quantitative information about the chemical and magnetic structure is obtained from polarized neutron reflectometry (PNR) and off-specular scattering (OSS). The technique provides information on the magnetic vector orientation and magnitude along the lateral coordinate of the sample, as well as the chemical and magnetic layer structure as a function of depth. Additional sensitivity to magnetic features is obtained through a neutron wave field resonance, which is fully accounted for in the presented analysis. The scattering reveals a domain width imbalance of 5.3 to 3.7 µm of virgin and bombarded stripes, respectively. Further, we report that the magnetization in the bombarded stripe significantly deviates from the head-to-head arrangement. A domain wall of 0.6 µm with homogeneous magnetization direction is found to separate the two neighboring domains. The results contain detailed information on length scales and magnetization vectors provided by PNR and OSS in absolute units. We illustrate the complementarity of the technique to microscopy techniques for obtaining a quantitative description of imprinted magnetic domain patterns and illustrate its applicability to different sample systems.

Magnetic domain walls are information tokens in both logic and memory devices and hold particular interest in applications such as neuromorphic accelerators that combine logic in memory. Here, we show that devices based on the electrical manipulation of magnetic domain walls are capable of implementing linear, as well as programmable nonlinear, functions. Unlike other approaches, domain-wall-based devices are ideal for application to both synaptic weight generators and thresholding in deep neural networks. Prototype micrometer-size devices operate with 8 ns current pulses and the energy consumption required for weight modulation is ≤16 pJ. Both speed and energy consumption compare favorably to other synaptic nonvolatile devices, with the expected energy dissipation for scaled 20 nm devices close to that of biological neurons.

The magnetization configuration of a novel nano-chessboard structure consisting of L10 and L12 phases in a Co40Pt60 alloy is investigated using Lorentz transmission electron microscopy (LTEM) and micro-magnetic simulations. We show high-resolution LTEM images of nano-size magnetic features acquired through spherical aberration correction in Lorentz Fresnel mode. Phase reconstructions and LTEM image simulations are carried out to fully understand the magnetic microstructure. The experimental Fresnel images of the nano-chessboard structure show zig-zag shaped magnetic domain walls at the inter-phase boundaries between L10 and L12 phases. A circular magnetization distribution with vortex and anti-vortex type arrangement is evident in the phase reconstructed magnetic induction maps as well as simulated maps. The magnetic contrast in experimental LTEM images is interpreted with the help of magnetic induction maps simulated for various relative electron beam-sample orientations inside the TEM.