互连材料在集成电路中对路由能量和信息起着至关重要的作用。然而,已建立的散装导体,比如铜,当缩小到超过10nm时表现不佳,限制了逻辑设备的可扩展性。这里,开发了多目标搜索,结合第一原理计算,快速筛选超过15,000种材料并发现新的互连候选物。这种方法同时优化了体电子电导率,表面散射时间,和使用可从材料数据库访问的物理动机替代属性的化学稳定性。有希望的局部互连被识别为具有超越钌的潜力,当前最先进的后铜材料,以及在GHz工作频率下具有潜在大趋肤深度的半全局互连。该方法在确定的候选人之一上得到验证,CoPt,使用从头算和实验运输研究,展示了其在未来局部互连中取代Ru和Cu的潜力。
Interconnect materials play the critical role of routing energy and information in integrated circuits. However, established bulk conductors, such as copper, perform poorly when scaled down beyond 10 nm, limiting the scalability of logic devices. Here, a multi-objective search is developed, combined with first-principles calculations, to rapidly screen over 15,000 materials and discover new interconnect candidates. This approach simultaneously optimizes the bulk electronic conductivity, surface scattering time, and chemical stability using physically motivated surrogate properties accessible from materials databases. Promising local
interconnects are identified that have the potential to outperform ruthenium, the current state-of-the-art post-Cu material, and also semi-global
interconnects with potentially large skin depths at the GHz operation frequency. The approach is validated on one of the identified candidates, CoPt, using both ab initio and experimental transport studies, showcasing its potential to supplant Ru and Cu for future local
interconnects.