2D thin films, possessing atomically thin thickness, are emerging as promising candidates for next-generation electronic devices, due to their novel properties and high performance. In the early years, a wide variety of 2D materials are prepared using several methods (mechanical/liquid exfoliation, chemical vapor deposition, etc.). However, the limited size of 2D flakes hinders their fundamental research and device applications, and hence the effective large-scale preparation of 2D films is still challenging. Recently, pulsed laser deposition (PLD) has appeared to be an impactful method for wafer-scale growth of 2D films, owing to target-maintained stoichiometry, high growth rate, and efficiency. In this review, the recent advances on the PLD preparation of 2D films are summarized, including the growth mechanisms, strategies, and materials classification. First, efficacious strategies of PLD growth are highlighted. Then, the growth, characterization, and device applications of various 2D films are presented, such as graphene, h-BN, MoS2, BP, oxide, perovskite, semi-metal, etc. Finally, the potential challenges and further research directions of PLD technique is envisioned.

Direct seawater electrolysis (DSE) for hydrogen production, using earth-abundant seawater as the feedstock and renewable electricity as the driving source, paves a new opportunity for flexible energy conversion/storage and smooths the volatility of renewable energy. Unfortunately, the complex environments of seawater impose significant challenges on the design of DSE catalysts, and the practical performance of many current DSE catalysts remains unsatisfactory on the device level. However, many studies predominantly concentrate on the development of electrocatalysts for DSE without giving due consideration to the specific devices. To mitigate this gap, the most recent progress (mainly published within the year 2020-2023) of DSE electrocatalysts and devices are systematically evaluated. By discussing key bottlenecks, corresponding mitigation strategies, and various device designs and applications, the tremendous challenges in addressing the trade-off among activity, stability, and selectivity for DSE electrocatalysts by a single shot are emphasized. In addition, the rational design of the DSE electrocatalysts needs to align with the specific device configuration, which is more effective than attempting to comprehensively enhance all catalytic parameters. This work, featuring the first review of this kind to consider rational catalyst design in the framework of DSE devices, will facilitate practical DSE development.

Crystalline tin oxide has been investigated for industrial applications since the 1970s. Recently, the amorphous phase of tin oxide has been used in thin film transistors (TFTs) and has demonstrated high performance. For large area electronics, TFTs are well suited, but they are subject to various instabilities due to operating conditions, such as positive or negative bias stress PBS (NBS). Another instability is hysteresis, which can be detrimental in operating circuits. Understanding its origin can help fabricating more reliable TFTs. Here, we report an investigation on the origin of the hysteresis of solution-processed polycrystalline SnO2 TFTs. We examined the effect of the carrier concentration in the SnO2 channel region on the hysteresis by varying the curing temperature of the thin film from 200 to 350 °C. Stressing the TFTs characterized further the origin of the hysteresis, and holes trapped in the dielectric are understood to be the main source of the hysteresis. With TFTs showing the smallest hysteresis, we could fabricate inverters and ring oscillators.

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In van der Waals (vdWs) materials and heterostructures, the interlayers are bonded by weak vdWs interactions due to the lack of dangling bonds. The vdWs gap at the homo- or heterointerface provides great freedom to enrich the tunability of electronic structures by external intercalation of foreign ions or atoms at the interface, leading to the discovery of new physics and functionalities. Herein, the recent progress on electrochemical intercalation of foreign species into atomically thin vdWs materials for structural phase transition and device applications is reviewed and future opportunities are discussed. First, several kinds of electrochemical intercalation platforms to achieve the intercalation in vdWs materials and heterostructures are introduced. Next, the in situ characterization of electrochemical intercalation dynamics by state-of-the-art techniques is summarized, including optical techniques, scanning probe techniques, and electrical transport. Moreover, particular attention is paid on the experimentally reported phase transition and multifunctional applications of intercalated devices. Finally, future applications and challenges of intercalation in vdWs materials and heterostructures are proposed, including the intrinsic intercalation mechanism of solid ion conductors, exact identification of intercalated foreign species by near-field optical techniques, and the tunability of intercalation kinetics for ultrafast switching.

An ideal semiconducting material should simultaneously hold a considerable direct band gap and a high carrier mobility. A 2D planar compound consisting of zigzag chains of C-C and B-N atoms, denoted as BC2N, would be a good candidate. It has a direct band gap of 2 eV, which can be further tuned by changing the layer number. At the same time, our first-principles calculations show that few-layer BC2N possesses a high carrier mobility. The carrier mobility of around one million sqaure centimeters per volt-second is obtained at its three-layer. As our study demonstrated, few-layer BC2N has potential applications in nanoelectronics and optoelectronics.