Abstract：
Due to shortcomings such as poor homogeneity of Al doping, precisely controlling the thickness, inability to conformally deposit on high aspect ratio devices and high pinhole rate, the applications of Al-doped ZnO (AZO) nanomembrane in integrated optoelectronic devices are remarkably influenced. Here, we reportin situmonitoring during the atomic layer deposition (ALD) of AZO nanomembrane by using an integrated spectroscopic ellipsometer. AZO nanomembranes with different compositions were deposited with real-time and precise atomic level monitoring of the deposition process. We specifically investigate the half-reaction and thickness evolution during the ALD processes and the influence of the chamber temperature is also disclosed. Structural characterizations demonstrate that the obtained AZO nanomembranes without any post-treatment are uniform, dense and pinhole-free. The transmittances of the nanomembranes in visible range are >94%, and the optimal conductivity can reach up to 1210 S cm-1. The output of current research may pave the way for AZO nanomembrane to become promising in integrated optoelectronic devices.
摘要：
由于Al掺杂均匀性差等缺点，精确控制厚度，无法保形沉积在高纵横比装置和高针孔率，Al掺杂ZnO（AZO）纳米膜在集成光电器件中的应用受到了显着影响。这里,我们报告了使用集成光谱椭偏仪在AZO纳米膜的原子层沉积（ALD）过程中的原位监测。通过对沉积过程的实时和精确的原子级监测来沉积具有不同组成的AZO纳米膜。我们特别研究了ALD工艺期间的半反应和厚度演变,并且还公开了室温度的影响。结构特征表明，未经任何后处理获得的AZO纳米膜是均匀的，致密且无针孔。纳米膜在可见光范围内的透射率>94%，最佳电导率可达1210S/cm。当前研究的成果可能为AZO纳米膜在集成光电器件中的应用铺平道路。
