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Abstract：
Contact resistance is a multifaceted challenge faced by the 2D materials community. Large Schottky barrier heights and gap-state pinning are active obstacles that require an integrated approach to achieve the development of high-performance electronic devices based on 2D materials. In this work, we present semiconducting PtSe2 field effect transistors with all-van-der-Waals electrode and dielectric interfaces. We use graphite contacts, which enable high ION/IOFF ratios up to 109 with currents above 100 μA μm-1 and mobilities of 50 cm2 V-1 s-1 at room temperature and over 400 cm2 V-1 s-1 at 10 K. The devices exhibit high stability with a maximum hysteresis width below 36 mV nm-1. The contact resistance at the graphite-PtSe2 interface is found to be below 700 Ω μm. Our results present PtSe2 as a promising candidate for the realization of high-performance 2D circuits built solely with 2D materials.
摘要：
接触电阻是2D材料社区面临的多方面挑战。大的肖特基势垒高度和间隙状态钉扎是活跃的障碍，需要集成的方法来实现基于2D材料的高性能电子器件的开发。在这项工作中,我们提出了具有全范德华电极和介电界面的半导体PtSe2场效应晶体管。我们用石墨触点,在室温下，电流高于100μAμm-1，迁移率为50cm2V-1s-1，在10K下，迁移率为400cm2V-1s-1。器件表现出高稳定性，最大滞后宽度低于36mVnm-1。发现石墨-PtSe2界面处的接触电阻低于700Ωμm。我们的结果表明，PtSe2是实现仅使用2D材料构建的高性能2D电路的有希望的候选者。
