{Reference Type}: Journal Article
{Title}: All van der Waals Semiconducting PtSe2 Field Effect Transistors with Low Contact Resistance Graphite Electrodes.
{Author}: Aslam MA;Leitner S;Tyagi S;Provias A;Tkachuk V;Pavlica E;Dienstleder M;Knez D;Watanabe K;Taniguchi T;Yan D;Shi Y;Knobloch T;Waltl M;Schwingenschlögl U;Grasser T;Matković A;
{Journal}: Nano Lett
{Volume}: 24
{Issue}: 22
{Year}: 2024 Jun 5
{Factor}: 12.262
{DOI}: 10.1021/acs.nanolett.4c00956
{Abstract}: Contact resistance is a multifaceted challenge faced by the 2D materials community. Large Schottky barrier heights and gap-state pinning are active obstacles that require an integrated approach to achieve the development of high-performance electronic devices based on 2D materials. In this work, we present semiconducting PtSe2 field effect transistors with all-van-der-Waals electrode and dielectric interfaces. We use graphite contacts, which enable high ION/IOFF ratios up to 109 with currents above 100 μA μm-1 and mobilities of 50 cm2 V-1 s-1 at room temperature and over 400 cm2 V-1 s-1 at 10 K. The devices exhibit high stability with a maximum hysteresis width below 36 mV nm-1. The contact resistance at the graphite-PtSe2 interface is found to be below 700 Ω μm. Our results present PtSe2 as a promising candidate for the realization of high-performance 2D circuits built solely with 2D materials.