最近,半导体纳米纤维网络(NFN)已被认为是最有前途的平台,用于大面积和低成本的电子应用。然而,堆叠纳米纤维之间的高接触电阻仍然是一个主要挑战,导致器件性能差和寄生能耗。在这份报告中,通过生物启发的毛细管驱动过程,成功地证明了NFN的可控焊接技术。通过合作概念很好地实现了光纤互连,结合局部毛细管冷凝和曲率诱导的表面扩散。随着光纤间连接的改进,焊接的NFN表现出增强的机械性能和高的电气性能。首次展示了基于焊接的Hf掺杂In2O3(InHfO)NFN的场效应晶体管(FET)。同时,讨论了多晶金属氧化物纳米纤维晶界调制的机理。当将高kZrOx介电薄膜集成到FET中时,场效应迁移率和工作电压进一步提高到25cm2V-1s-1和3V,分别。这是报道的基于纳米纤维的FET中最好的器件性能之一。这些结果表明了毛细管驱动的焊接过程和金属氧化物NFN的晶界调制机制的有效性,这可能适用于高性能,大规模,和低功耗功能电子产品。
Recently, semiconducting nanofiber networks (NFNs) have been considered as one of the most promising platforms for large-area and low-cost electronics applications. However, the high contact resistance among stacking nanofibers remained to be a major challenge, leading to poor device performance and parasitic energy consumption. In this report, a controllable welding technique for NFNs was successfully demonstrated via a bioinspired capillary-driven process. The interfiber connections were well-achieved via a cooperative concept, combining localized capillary condensation and curvature-induced surface diffusion. With the improvements of the interfiber connections, the welded NFNs exhibited enhanced mechanical property and high electrical performance. The field-effect transistors (FETs) based on the welded Hf-doped In2O3 (InHfO) NFNs were demonstrated for the first time. Meanwhile, the mechanisms involved in the grain-boundary modulation for polycrystalline metal-oxide nanofibers were discussed. When the high-k ZrO x dielectric thin films were integrated into the FETs, the field-effect mobility and operating voltage were further improved to be 25 cm2 V-1 s-1 and 3 V, respectively. This is one of the best device performances among the reported nanofibers-based FETs. These results demonstrated the potencies of the capillary-driven welding process and grain-boundary modulation mechanism for metal-oxide NFNs, which could be applicable for high-performance, large-scale, and low-power functional electronics.