spin switching

  • 文章类型: Journal Article
    信息技术革命需要更大、更快的磁存储技术。全光学自旋切换(AOS)可能是一个解决方案,只有一个超快激光脉冲可以在1-10ps内忠实地将磁化从一个方向切换到另一个方向,没有磁性fi场。有两种类型的切换:一种是依赖于螺旋度的全光学自旋切换(HD-AOS),另一种是与螺旋度无关的全光学自旋切换(HID-AOS)。在几种合金中,一个单一的激光脉冲,有了suúcientfluence,可以切换旋转,但是大多数磁性材料需要多个脉冲。材料规格fic和激光规格fic特性都强烈影响开关过程。然而,潜在的机制仍在辩论中。随着整个研究fi领域走向应用,回顾过去十年取得的成就是非常合适的。这篇综述涵盖了过去十年中的一些主要实验和理论发展,并作为本fi领域的初学者的介绍和经验丰富的研究人员的总结。 .
    Information technology revolution demands bigger and faster magnetic storage. All-optical spin switching (AOS) may offer a solution, where an ultrafast laser pulse alone can switch magnetization from one direction to another faithfully within 1-10 ps, free of a magnetic field. There are two types of switching: One is the helicity-dependent all-optical spin switching (HD-AOS) and the other the helicity-independent all-optical spin switching (HID-AOS). In a few alloys, one single laser pulse, with sufficient fluence, can switch spin, but the majority of magnetic materials requires multiple pulses. Both material-specific and laser-specific properties strongly affect the switching process. However, the underlying mechanism is still under debate. As the entire research field moves toward applications, it is very appropriate to review what has been achieved in the last decade. This review covers some of the major experimental and theoretical developments within the last decade, and serves as an introduction to the uninitiated reader in this field and a summary for the seasoned researchers.
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  • 文章类型: Journal Article
    Recent experimental studies proved the presence of the triplet spin state in atomically precise heptauthrene nanostructure of nanographene type (composed of two interconnected triangles with zigzag edge). In the paper, we report the computational study predicting the possibility of controlling this spin state with an external in-plane electric field by causing the spin switching. We construct and discuss the ground state magnetic phase diagram involving S=1 (triplet) state, S=0 antiferromagnetic state and non-magnetic state and predict the switching possibility with the critical electric field of the order of 0.1 V/Å. We discuss the spin distribution across the nanostructure, finding its concentration along the longest zigzag edge. To model our system of interest, we use the mean-field Hubbard Hamiltonian, taking into account the in-plane external electric field as well as the in-plane magnetic field (in a form of the exchange field from the substrate). We also assess the effect of uniaxial strain on the magnetic phase diagram.
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  • 文章类型: Journal Article
    金属和分子化合物之间形成的分子界面为未来的光电和自旋电子器件提供了巨大的潜力。这里,结合理论和实验的光谱显微镜方法用于显示在镍四苯基卟啉和铜之间的界面处发生的电荷转移改变了[Ni(II),S=0到[Ni(I),S=1/2]。化学活性Ni(I),即使在埋藏的多层系统中,可以用二氧化氮功能化,允许选择性调谐切换到[Ni(II),S=1]状态。虽然Ni充当可逆自旋开关,发现大环主链的电子结构,前沿轨道主要是局部化的,仍然不受影响。这些发现为使用当前的基于卟啉的系统作为实现多功能设备的平台铺平了道路,其中磁性和光学/传输特性可以通过独立的刺激同时控制。
    Molecular interfaces formed between metals and molecular compounds offer a great potential as building blocks for future opto-electronics and spintronics devices. Here, a combined theoretical and experimental spectro-microscopy approach is used to show that the charge transfer occurring at the interface between nickel tetraphenyl porphyrins and copper changes both spin and oxidation states of the Ni ion from [Ni(II), S = 0] to [Ni(I), S = 1/2]. The chemically active Ni(I), even in a buried multilayer system, can be functionalized with nitrogen dioxide, allowing a selective tuning of the electronic properties of the Ni center that is switched to a [Ni(II), S = 1] state. While Ni acts as a reversible spin switch, it is found that the electronic structure of the macrocycle backbone, where the frontier orbitals are mainly localized, remains unaffected. These findings pave the way for using the present porphyrin-based system as a platform for the realization of multifunctional devices where the magnetism and the optical/transport properties can be controlled simultaneously by independent stimuli.
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  • 文章类型: Journal Article
    We investigate the detailed analysis of the magnetic properties in a series of Pr1-xSmxFeO3single crystals fromx= 0 to 1 with an interval of 0.1. Doping controlled spin reorientation transition temperatureTSRΓ4(Gx,Ay,Fz) to Γ2(Fx,Cy,Gz) covers a wide temperature range including room temperature. A \'butterfly\'-shape type-I spin switching with 180° magnetization reversal occurs below and above the magnetization compensation points inx= 0.4 to 0.8 compounds. Interestingly, in Pr0.6Sm0.4FeO3single crystal, we find an inadequate spin reorientation transition accompanied by uncompleted type-I spin switching in the temperature region from 138 to 174 K. Furthermore, a type-II spin switching appears at 23 K, as evidenced from the magnetization curve in field-cooled-cooling (FCC) mode initially bifurcate from zero-field-cooled (ZFC) magnetization curve at 40 K and finally drops back to coincide the ZFC magnetization value at 23 K. Our current research reveals a strong and complex competition between Pr3+-Fe3+and Sm3+-Fe3+exchange interactions and more importantly renders a window to design spintronic device materials for future potential applications.
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  • 文章类型: Journal Article
    Controlling the spin of metal atoms embedded in molecular systems is a key step toward the realization of molecular electronics and spintronics. Many efforts have been devoted to explore the influencing factors dictating the survival or quenching of a magnetic moment in a metal-organic molecule, and among others, the spin control by axial ligand attachments is the most promising. Herein, from the interplay of high-resolution scanning tunneling microscopy imaging/manipulation and scanning tunneling spectroscopy measurements together with density functional theory calculations, we successfully demonstrate that a Ni trimer within a metal-organic motif acquires a net spin promoted by the adsorption of an on-top Br atom. The spin localization in the trimetal centers bonded to Br was monitored via the Kondo effect. The removal of the Br ligand resulted in the switch from a Kondo ON to a Kondo OFF state. The magnetic state induced by the Br ligand is theoretically attributed to the enhanced Br 4pz and Ni 3dz2 states due to the charge redistribution. The manipulation strategy reported here provides the possibility to explore potential applications of spin-tunable structures in spintronic devices.
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