A vast number of mass flow controllers (MFCs) are used in semiconductor industry. For the stable supply, an efficient production method of MFC is required. The gain tuning of the proportional-integral (PI) control to realize a setting flow rate is essential for efficient mass production. The gains are tuned to meet the specifications required for evaluation indices of response time and overshoot amount in a step response waveform. The tuning is complicated especially for the case of pressure-based MFCs. In this paper, we propose a simple method for the PI gain tuning using the Gaussian mixture model (GMM) and the direct inverse analysis applicable to the pressure-based MFCs\' production. The relationship between the gains and evaluation indices for a standard unit of the MFC is modeled as the GMM. The direct inverse analysis calculates the difference between the standard and a test unit. Under the assumption that the difference can be compensated by a simple shift, gains likely to meet the specifications for the test unit are searched. We applied the method to seven test units. The result showed that the gains of all the test units were tuned within only a few iterations whose numbers were much less than the conventional manual tuning method, and there was no untunable unit.

Doping narrow-gap semiconductors is a well-established approach for designing efficient thermoelectric materials. Semiconducting half-Heusler (HH) and full-Heusler (FH) compounds have garnered significant interest within the thermoelectric field, yet the number of exceptional candidates remains relatively small. It is recently shown that the vacancy-filling approach is a viable strategy for expanding the Heusler family. Here, a range of near-semiconducting Heuslers, TiFexCuySb, creating a composition continuum that adheres to the Slater-Pauling electron counting rule are theoretically designed and experimentally synthesized. The stochastic and incomplete occupation of vacancy sites within these materials imparts continuously changing electrical conductivities, ranging from a good semiconductor with low carrier concentration in the endpoint TiFe0.67Cu0.33Sb to a heavily doped p-type semiconductor with a stoichiometry of TiFe1.00Cu0.20Sb. The optimal thermoelectric performance is experimentally observed in the intermediate compound TiFe0.80Cu0.28Sb, achieving a peak figure of merit of 0.87 at 923 K. These findings demonstrate that vacancy-filling Heusler compounds offer substantial opportunities for developing advanced thermoelectric materials.

Photocatalysis is a most important approach to addressing global energy shortages and environmental issues due to its environmentally friendly and sustainable properties. The key to realizing efficient photocatalysis relies on developing appropriate catalysts with high efficiency and chemical stability. Among various photocatalysts, Metal-organic frameworks (MOFs)-derived hollow-structured materials have drawn increased attention in photocatalysis based on advantages like more active sites, strong light absorption, efficient transfer of pho-induced charges, excellent stability, high electrical conductivity, and better biocompatibility. Specifically, MOFs-derived hollow-structured materials are widely utilized in photocatalytic CO2 reduction (CO2RR), hydrogen evolution (HER), nitrogen fixation (NRR), degradation, and other reactions. This review starts with the development story of MOFs, the commonly adopted synthesis strategies of MOFs-derived hollow materials, and the latest research progress in various photocatalytic applications are also introduced in detail. Ultimately, the challenges of MOFs-derived hollow-structured materials in practical photocatalytic applications are also prospected. This review holds great potential for developing more applicable and efficient MOFs-derived hollow-structured photocatalysts.

This study investigates the impact of the surface electric field on the quantification accuracy of boron (B) implanted silicon (Si) using atom probe tomography (APT). The Si Charge-State Ratio (CSR(Si) = Si2+/Si+) was used as an indirect measure of the average apex electric field during analysis. For a range of electric fields, the accuracy of the total implanted dose and the depth profile shape determined by APT was evaluated against the National Institute of Standards and Technology Standard Reference Material 2137. The radial (non-)uniformity of the detected B was also examined. At a higher surface electric field (i.e., a greater CSR(Si)), the determined B dose converges on the certified dose. Additionally, the depth profile shape tends towards that derived by secondary ion mass spectrometry. This improvement coincides with a more uniform radial B distribution, evidenced by desorption maps. In contrast, for lower surface electric fields (i.e., a lower CSR(Si)), the B dose is significantly underestimated, and the depth profile is artificially stretched. The desorption maps also indicate a highly inhomogeneous B emission localized around the center of the detector, which is believed to be an artifact of B surface migration on the tip of the sample. For the purposes of routine investigations of semiconductor devices using APT, these results illustrate the potential origin of quantification artifacts and their severity at different operating conditions, thus providing pathways towards best practices for accurate and repeatable measurements.

Two-dimensional (2D) ferromagnetic semiconductors (FM SCs) provide an ideal platform for the development of quantum information technology in nanoscale devices. However, many developed 2D FM materials present a very low Curie temperature (TC), greatly limiting their application in spintronic devices. In this work, we predict two stable 2D transition metal chalcogenides, V3Se3X2 (X = S, Te) monolayers, by using first-principles calculations. Our results show that the V3Se3Te2 monolayer is a robust bipolar magnetic SC with a moderate bandgap of 0.53 eV, while V3Se3S2 is a direct band-gap FM SC with a bandgap of 0.59 eV. Interestingly, the ferromagnetisms of both monolayers are robust due to the V-S/Se/Te-V superexchange interaction, and TCs are about 406 K and 301 K, respectively. Applying biaxial strains, the FM SC to antiferromagnetic (AFM) SC transition is revealed at 5% and 3% of biaxial tensile strain. In addition, their high mechanical, dynamical, and thermal stabilities are further verified by phonon dispersion calculations and ab initio molecular dynamics (AIMD) calculations. Their outstanding attributes render the V3Se3Y2 (Y = S, Te) monolayers promising candidates as 2D FM SCs for a wide range of applications.

Introduction: Many surgical procedures in a soft tissue are performed using diodes lasers. This study aimed to assess the temperature rise and pain following the use of 810 and 980 nm diode lasers for second-stage dental implant surgery. Methods: This clinical trial was conducted on 24 osseointegrated dental implants that were randomly divided into two groups of 810 nm and 980 nm diode lasers. The temperature rise in each group was measured right after uncovering by the laser and 15 minutes later by a thermocouple, compared with the baseline temperature of gingival tissue. The level of pain was also measured at 24 hours postoperatively by using a visual analog scale. Data were analyzed by ANOVA, Tukey\'s test, and t test (alpha=0.05). Results: Within-group comparisons by ANOVA showed a significant difference in tissue temperature between the three time points in both groups (P<0.0001). Pairwise comparisons by Tukey\'s test showed that the temperature at baseline (P<0.0001) and 15 seconds after uncovering was significantly lower than that immediately after uncovering in both groups (P<0.0001). The mean tissue temperature and the mean pain score in the 980 nm laser group were significantly higher than the corresponding values in the 810 nm laser group (P<0.05). Conclusion: According to the results, temperature rise in the use of the 980 nm laser was higher than the 810 nm laser. The use of 810 nm diode laser was associated with lower temperature rise and significantly lower pain score after 24 hours.

Bismuth oxyfluoride (BiOF) is an emerging class of material with notable chemical stability, unique layered structure and striking energy band structure. Bi-based semiconductor materials and reduced graphene oxides (rGOs) have attracted considerable attention due to their broad spectrum of potential applications. Herein, we successfully synthesised an efficient photocatalyst comprising BiOF-rGO nanocomposites with embedded Ag nanoparticles using a simple hydrothermal method. The synthesised nanocomposites were characterised through Fourier-transform infrared spectroscopy, X-ray diffraction (XRD), field emission scanning electron microscopy and ultraviolet (UV)-visible spectroscopy. The XRD results indicated the crystalline structures of the BiOF, Ag-doped BiOF and Ag-doped BiOF-rGO composites. Photocatalytic activity assessments focused on the degradation of methylene blue (MB) and methyl orange (MO) dyes under UV-light and sunlight irradiation. The Ag-doped BiOF-rGO composite exhibited significantly enhanced degradation efficiency, achieving 61.81 % and 74.25 % degradation of MB and MO, respectively, after 300 min under UV-light irradiation. On the contrary, pure BiOF demonstrated only 17.63 % and 48.29 % degradation for MB and MO, respectively, under similar conditions. Furthermore, under sunlight irradiation, the Ag-doped BiOF-rGO composite exhibited an MB removal efficiency of 43.87 % after 300 min, whereas pure BiOF showed only 27.47 % under identical conditions. These results underscore the potential of Ag-doped BiOF-rGO composites as highly efficient and adaptable photocatalysts for the photodegradation of organic dyes in industrial wastewater.

The oxidation of tetraselenatetracene (TSeT) by tetracyanoquinodimethane in the presence of dysprosium(III) tris(hexafluoroacetylacetonate), DyIII(hfac)3, produces black crystals of {TSeT1.5}●+[DyIII(hfac)4]- (1) salt, which combines conducting and magnetic sublattices. It contains one-dimensional stacks composed of partially oxidized TSeT molecules (formal averaged charge is +2/3). Dimers and monomers can be outlined within these stacks with charge and spin density redistribution. The spin triplet state of the dimers is populated above 128 K with an estimated singlet-triplet energy gap of 542 K, whereas spins localized on the monomers show paramagnetic behavior. A semiconducting behavior is observed for 1 with the activation energy of 91 meV (measured by the four-probe technique for an oriented single crystal). The DyIII ions coordinate four hfac- anions in [DyIII(hfac)4]-, providing D2d symmetry. Slow magnetic relaxation is observed for DyIII under an applied static magnetic field of 1000 Oe, and 1 is a single-ion magnet (SIM) with spin reversal barrier Ueff = 40.2 K and magnetic hysteresis at 2 K. Contributions from DyIII and TSeT●+ paramagnetic species are seen in EPR. The DyIII ion rarely manifests EPR signals, but such signal is observed in 1. It appears due to narrowing below 30 K and has g4 = 6.1871 and g5 = 2.1778 at 5.4 K.

This review focuses on optical properties of compounds in which at least one phosphonate group is directly attached to a heteroaromatic ring. Additionally, the synthesis and other applications of these compounds are addressed in this work. The influence of the phosphonate substituent on the properties of the described compounds is discussed and compared with other non-phosphorus substituents, with particular attention given to photophysical properties, such as UV-Vis absorption and emission, fluorescence quantum yield and fluorescence lifetime. Considering the presence of heteroatom, the collected material was divided into two parts, and a review of the literature of the last thirty years on heteroaryl phosphonates containing sulfur and nitrogen atoms in the aromatic ring was conducted.

Mesenchymal stem cells can differentiate into specific cell lineages in the tissue repair process. Photobiomodulation with laser and LED is used to treat several comorbidities, can interfere in cell proliferation and viability, in addition to promoting responses related to the physical parameters adopted. Evaluate and compare the effects of laser and LED on mesenchymal cells, with different energy doses and different wavelengths, in addition to viability and wound closure. Mesenchymal stem cells derived from human adipocytes were irradiated with laser (energy of 0.5 J, 2 J and 4 J, wavelength of 660 nm and 830 nm), and LED (energy of 0.5 J, 2 J and 4 J, where lengths are 630 nm and 850 nm). The wound closure process was evaluated through monitoring the reduction of the lesion area in vitro. Viability was determined by analysis with Hoechst and Propidium Iodide markers, and quantification of viable and non-viable cells respectively Data distributions were analyzed using the Shapiro-Wilk test. Homogeneity was analyzed using Levene\'s test. The comparison between the parameters used was analyzed using the Two-way ANOVA test. The T test was applied to data relating to viability and lesion area. For LED photobiomodulation, only the 630 nm wavelength obtained a significant result in 24, 48 and 72 h (p = 0,027; p = 0,024; p = 0,009). The results related to the in vitro wound closure test indicate that both photobiomodulation with laser and LED demonstrated significant results considering the time it takes to approach the edges (p < 0.05). Considering the in vitro experimental conditions of the study, it is possible to conclude that the physical parameters of photobiomodulation, such as energy and wavelength, with laser or LED in mesenchymal stem cells, can play a potential role in cell viability and wound closure.