过渡金属二硫属化合物(TMDs)在压力下表现出优异的电子和光电性能,促使研究人员研究它们的结构相变,电力运输,和压缩时的光电响应。在这里,利用原位高压光电流在压力下层状ZrS2的结构和光电性能,拉曼散射光谱,交流阻抗谱,吸收光谱学,并进行了理论计算研究。实验结果表明,ZrS2的光电流随着压力的增加而不断增加。在24.6GPa时,在环境压力下,高压阶段P21/m的光电流比初始阶段P3‘m1$P\\bar{3}m1$大三个数量级。ZrS2的纯高压相P21/m的最小合成压力为18.8GPa,它显示的光电流比初始阶段P3'm1$P\\bar{3}m1$高两个数量级,并显示出出色的稳定性。此外,发现晶体结构,层状ZrS2的电输运性质和带隙也可以通过压力调节。这项工作为研究人员使用高压合成高性能TMD光电材料提供了新的方向,这对于未来提高光电器件的性能至关重要。
Transition metal dichalcogenides (TMDs) exhibit excellent electronic and photoelectric properties under pressure, prompting researchers to investigate their structural phase transitions, electrical transport, and photoelectric response upon compression. Herein, the structural and photoelectric properties of layered ZrS2 under pressure using in situ high-pressure
photocurrent, Raman scattering spectroscopy, alternating current impedance spectroscopy, absorption spectroscopy, and theoretical calculations are studied. The experimental results show that the
photocurrent of ZrS2 continuously increases with increasing pressure. At 24.6 GPa, the
photocurrent of high-pressure phase P21/m is three orders of magnitude greater than that of the initial phase P 3 ¯ m 1 $P\\bar{3}m1$ at ambient pressure. The minimum synthesis pressure for pure high-pressure phase P21/m of ZrS2 is 18.8 GPa, which exhibits a
photocurrent that is two orders of magnitude higher than that of the initial phase P 3 ¯ m 1 $P\\bar{3}m1$ and displays excellent stability. Additionally, it is discovered that the crystal structure, electrical transport properties and bandgap of layered ZrS2 can also be regulated by pressure. This work offers researchers a new direction for synthesizing high-performance TMDs photoelectric materials using high pressure, which is crucial for enhancing the performance of photoelectric devices in the future.