负微分电阻(NDR),当施加的电压增加时电流减小的现象,作为一种独特的电气特性引起了人们的注意。这里,我们提出了一种宽光谱光/门可调谐通道切换NDR(CS-NDR)装置。与先前报道的NDR器件相比,提出的CS-NDR器件具有优越的线性栅极可调NDR行为和高度可再现的特性,作为CS-NDR器件的基本机制,通过施加的漏极电压的线性增加而与电荷传输通道切换直接相关。我们还通过实验证明,CS-NDR器件的光诱导NDR行为来自dinaphtho[2;3-b:2',3\'-f]-噻吩并[3,2-b]噻吩。此外,这项工作产生了一个由81个设备组成的9×9CS-NDR设备阵列,提供CS-NDR装置的再现性和均匀性。最后,我们使用建议的照片/门可调谐NDR行为,成功地演示了81个CS-NDR设备对文本图像的检测。
Negative differential resistance (NDR), a phenomenon in which the current decreases when the applied voltage is increased, is attracting attention as a unique electrical property. Here, we propose a broad spectral photo/gate cotunable channel switching NDR (CS-NDR) device. The proposed CS-NDR device has superior linear gate-tunable NDR behavior and highly reproducible properties compared to the previously reported NDR devices, as the fundamental mechanism of the CS-NDR device is directly related to a charge transport channel switching by the linear increase of the applied drain voltage. We also experimentally demonstrate that the photoinduced NDR behavior of the CS-NDR device was derived from the grain boundaries of dinaphtho[2;3-b:2\',3\'-f]-thieno[3,2-b]thiophene. Furthermore, this work produces a 9 × 9 CS-NDR device array composed of 81 devices, providing the reproducibility and uniformity of the CS-NDR device. Finally, we successfully demonstrate the detection of text images with 81 CS-NDR devices using the proposed photo/gate cotunable NDR behavior.