Nanowelding is a bottom-up technique to create custom-designed nanostructures and devices beyond the precision of lithographic methods. Here, a new technique is reported based on anisotropic lubricity at the van der Waals interface between monolayer and bilayer SnSe nanoplates and a graphene substrate to achieve precise control of the crystal orientation and the interface during the welding process. As-grown SnSe monolayer and bilayer nanoplates are commensurate with graphene\'s armchair direction but lack commensuration along graphene\'s zigzag direction, resulting in a reduced friction along that direction and a rail-like, 1D movement that permits joining nanoplates with high precision. This way, molecular beam epitaxially grown SnSe nanoplates of lateral sizes 30-100 nm are manipulated by the tip of a scanning tunneling microscope at room temperature. In situ annealing is applied afterward to weld contacting nanoplates without atomic defects at the interface. This technique can be generalized to any van der Waals interfaces with anisotropic lubricity and is highly promising for the construction of complex quantum devices, such as field effect transistors, quantum interference devices, lateral tunneling junctions, and solid-state qubits.

To enhance the conductivity of a silver nanowire (Ag NW) network, a facile solvent welding method was developed. Soaking a Ag NW network in ethylene glycol (EG) or alcohol for less than 15 min decreased the resistance about 70%. Further combined solvent processing via a plasmonic welding approach decreased the resistance about 85%. This was achieved by simply exposing the EG-soaked Ag NW network to a low-power blue light (60 mW/cm2). Research results suggest that poly(vinylpyrrolidone) (PVP) dissolution by solvent brings nanowires into closer contact, and this reduced gap distance between nanowires enhances the plasmonic welding effect, hence further decreasing resistance. Aside from this dual combination of methods, a triple combination with Joule heating welding induced by applying a current to the Ag NW network decreased the resistance about 96%. Although conductivity was significantly enhanced, our results showed that the melting at Ag NW junctions was relatively negligible, which indicates that the enhancement in conductivity could be attributed to the removal of PVP layers. Moreover, the approaches were quite gentle so any potential damage to Ag NWs or polymer substrates by overheating (e.g., excessive Joule heating) was avoided entirely, making the approaches suitable for application in devices using heat-sensitive materials.

The continuous miniaturization of microelectronics is pushing the transformation of nanomanufacturing modes from top-down to bottom-up. Bottom-up manufacturing is essentially the way of assembling nanostructures from atoms, clusters, quantum dots, etc. The assembly process relies on nanowelding which also existed in the synthesis process of nanostructures, construction and repair of nanonetworks, interconnects, integrated circuits, and nanodevices. First, many kinds of novel nanomaterials and nanostructures from 0D to 1D, and even 2D are synthesized by nanowelding. Second, the connection of nanostructures and interfaces between metal/semiconductor-metal/semiconductor is realized through low-temperature heat-assisted nanowelding, mechanical-assisted nanowelding, or cold welding. Finally, 2D and 3D interconnects, flexible transparent electrodes, integrated circuits, and nanodevices are constructed, functioned, or self-healed by nanowelding. All of the three nanomanufacturing stages follow the rule of \"oriented attachment\" mechanisms. Thus, the whole-lifetime bottom-up manufacturing process from the synthesis and connection of nanostructures to the construction and service of nanodevices can be organically integrated by nanowelding. The authors hope this review can bring some new perspective in future semiconductor industrialization development in the expansion of multi-material systems, technology pathway for the refined design, controlled synthesis and in situ characterization of complex nanostructures, and the strategies to develop and repair novel nanodevices in service.

Silver nanowires (AgNWs) have been considered as one of the most promising flexible transparent electrodes (FTEs) material for next-generation optoelectronic devices. However, the large contact resistance between AgNWs could deteriorate the conductivity of FTEs. In the present work, high-performance AgNWs FTEs were obtained by means of focused-light-scanning (FLS), which could lead to the large-area, rapid and high-quality welding between AgNWs within a short time, forming the reliable and stable AgNWs network. The results of the optoelectronic tests show that after FLS, the sheet resistance of the AgNWs FTEs sharply decreased from 5113 Ω/sq to 7.7 Ω/sq, with maintaining a high transmittance (∼94%). Finally, a high-performance flexible transparent heater was fabricated by using FLS, showing reach a relatively high temperature in a short response time and rapid response at low input voltage. The findings offer an effective pathway to greatly improve the conductivity of AgNWs FTEs.

This paper reveals the mechanism of nanowelding a branched network of single-walled carbon nanotubes (SWCNTs) used as a framework for the formation of protein-polymer matrices with albumin, collagen, and chitosan. It is shown that the introduction of certain point defects into the structure of SWCNTs (single vacancy, double vacancy, Stone-Wales defect, and a mixed defect) allows us to obtain strong heating in defective regions as compared to ideal SWCNTs. The wavelengths at which absorption reaches 50% are determined. Non-uniform absorption of laser radiation along with inefficient heat removal in defective regions determines the formation of hot spots, in which nanowelding of SWCNTs is observed even at 0.36 nm between contacting surfaces. The regularities of formation of layered protein-polymer matrices and the features of their interaction with cell membrane are revealed. All studies are carried out in silico using high-precision quantum approaches.

A novel method was developed for fabricating nanopatterns embedded on micropillar-structured surfaces using nanowelding technology for security identification. Commonly used substrates, that is, polyethylene films, glass wafers, Si wafers, and curved surfaces, were employed and their characteristics were evaluated. Cr was deposited onto the selected substrate to strengthen the adhesion force, and an adhesive layer of ultra-thin metal was deposited on top of the Cr layer. Lastly, nanopatterns were embedded on the substrates by nanowelding. The morphologies, cross sections, and three-dimensional (3D) images of the fabricated nanostructures were evaluated, and their crystalline structures and compositions were analyzed. Using the same method, nanopatterns embedded on micropillar-structured surfaces were fabricated for the first time as security patterns to improve security identification. The fabricated security patterns were characterized in three stages. First, micropillar structures and structural color were simply observed via optical microscopy to achieve a preliminary judgment. The appearance of structural color was due to the nanostructures fabricated on the micropillar surface. Next, the designed nanopatterns on the micropillar-structured surfaces were observed by scanning electron microscopy. Lastly, the changes in the spectral peaks were precisely observed using a spectrometer to achieve an enhanced security pattern. The fabricated security patterns can be suitable for valuable products, such as branded wines, watches, and bags. In addition, the proposed method offers a simple approach for transferring metal nanopatterns to common substrates. Moreover, the fabricated security patterns can have potential applications in semiconductor electrodes, transparent electrodes, and security identification codes.

A novel method for fabricating 3D metallic nanostructures to be used in polarized color filters based on nanoimprint lithography, electron-beam evaporation, and nanowelding is proposed. The shape of the nanostructures can be controlled by adjusting the temperature for the nanowelding process. Ag nanowires deposited on polymer patterns are accumulated by the nanowelding process to build up diverse 3D nanostructures. The morphologies of the fabricated 3D nanostructures are analyzed using scanning electron microscopy, atomic force microscopy, and focused ion beam; the heating temperature is varied from 90 to 130 °C in steps of 10 °C. In order to analyze the recrystallization phenomenon after welding, transmission electron microscopy is utilized. The 3D metallic nanostructure has different morphologies and optical properties corresponding to welding temperature conditions and accumulated layer thicknesses. Based on preliminary experimental results, the process parameters are optimized and a polarized color filter is fabricated. Optical characteristics of the filter are evaluated using polarizer and spectrometer. Through this work, it is shown that the proposed method is an effective way to realize various 3D metallic nanostructures for special optical properties, therefore the method based on nanowelding can be utilized in fabrication of functional metamaterials, optical filters, biosensors, and others.

High contact resistance between silver nanowires (AgNWs) is a key issue in widespread application of AgNW flexible transparent conductive films as a promising candidate to replace the brittle and expensive indium tin oxide. A facile, room-temperature nanowelding method of an AgNW network triggered by hydrogen chloride (HCl) vapor is demonstrated to reduce the sheet resistance of the AgNW network. Under the visible light, O2 and HCl vapor serving as an etching couple induced silver atoms to be transferred from the bottom AgNW at the junction to the top one, and then, these silver atoms epitaxially recrystallized at the contact position with the lattice of the top AgNW as the template, ultimately resulting in the coalescence of the junction between AgNWs. Polydimethylsiloxane (PDMS) was spin-coated onto the HCl-vapor-treated (HVT) AgNW network on the polyethylene terephthalate substrate to fabricate PDMS/HVT AgNW films. The fabricated film with low sheet resistance and high transmittance retained its conductivity after 4000 bending cycles. Furthermore, excellent heating performance, electromagnetic interference shielding effectiveness, and foldability were obtained in the PDMS/HVT AgNW film. Thus, the role of the simple nanowelding process is evident in enhancing the performance of AgNW transparent conductive films for emerging soft optoelectronic applications.

Interfacial contact of two-dimensional graphene with three-dimensional metal electrodes is crucial to engineering high-performance graphene-based nanodevices with superior performance. Here, we report on the development of a rapid \"nanowelding\" method for enhancing properties of interface to graphene buried under metal electrodes using a focused electron beam induced deposition (FEBID). High energy electron irradiation activates two-dimensional graphene structure by generation of structural defects at the interface to metal contacts with subsequent strong bonding via FEBID of an atomically thin graphitic interlayer formed by low energy secondary electron-assisted dissociation of entrapped hydrocarbon contaminants. Comprehensive investigation is conducted to demonstrate formation of the FEBID graphitic interlayer and its impact on contact properties of graphene devices achieved via strong electromechanical coupling at graphene-metal interfaces. Reduction of the device electrical resistance by ∼50% at a Dirac point and by ∼30% at the gate voltage far from the Dirac point is obtained with concurrent improvement in thermomechanical reliability of the contact interface. Importantly, the process is rapid and has an excellent insertion potential into a conventional fabrication workflow of graphene-based nanodevices through single-step postprocessing modification of interfacial properties at the buried heterogeneous contact.

In this article, we present a comprehensive investigation of the photothermal properties of plasmonic nanowire networks. We measure the local steady-state temperature increase, heat source density, and absorption in Ag, Au, and Ni metallic nanowire networks under optical illumination. This allows direct experimental confirmation of increased heat generation at the junction between two metallic nanowires and stacking-dependent absorption of polarized light. Due to thermal collective effects, the local temperature distribution in a network is shown to be completely delocalized on a micrometer scale, despite the nanoscale features in the heat source density. Comparison of the experimental temperature profile with numerical simulation allows an upper limit for the effective thermal conductivity of a Ag nanowire network to be established at 43 Wm(-1) K(-1) (0.1 κbulk).