Metal oxide materials processed using solution methods have garnered significant attention due to their ability to efficiently and affordably create transparent insulating layers or active channel layers on various substrates for thin-film transistors (TFTs) used in modern electronics. The key properties of TFTs largely depend on how charge carriers behave near the thin layer at the semiconductor and dielectric interface. Effectively controlling these characteristics offers a straightforward yet effective approach to enhancing device performance. In this study, we propose a novel strategy utilizing atmospheric pressure plasma (APP) treatment to modulate the electrical properties of dielectric thin films and the interfaces between dielectric and semiconductor layers in TFTs processed by using solution methods. Through APP exposure, significant improvements in key TFT parameters were achieved for solution-processed TFTs. Interface states have been reduced from 1013 to 1011 cm-2, and the on/off current ratio has increased from 103 to 106 while maintaining a high field-effect mobility of 34 cm2 V-1 s-1. Additionally, UV-visible spectroscopy and X-ray analysis have confirmed the effectiveness of APP treatment in controlling interface states and traps, leading to overall performance enhancements in the TFTs. Furthermore, our experimental findings have been systematically validated using technology computer-aided design (TCAD) simulations of fabricated TFTs.

OBJECTIVE: The aim of this study was to describe the correlation between atrial electrogram duration map (AEDUM), spatiotemporal electrogram dispersion (STED) and low voltage areas (LVA) in patients with persistent atrial fibrillation (PsAF).
BACKGROUND: The degree of left atrial (LA) tissue remodelling and augmented anisotropic conduction is one of the major issues related to PsAF ablation outcome.
METHODS: This study enrolled consecutive patients with PsAF undergoing pulmonary vein isolation. In all patients, voltage, AEDUM and STED maps were created, and the correlation was reported between these three mapping methods.
RESULTS: A total of 40 patients with PsAF were enrolled. The mean age was 62.2 ± 7.4 years, and males were 72.5% (n = 29). The overall bipolar voltage of the LA was 3.06 ± 1.87 mV. All patients had at least one AEDUM area (overall AEDUM area: 21.8 ± 8.2 cm2); the mean longest electrogram (EGMs) duration was 90 ± 19 ms. STED areas with < 120 ms was 46.3 ± 20.2 cm2 which covered 45 ± 22% of the LA surface. AEDUM and STED areas were most frequently reported on the roof, the anterior wall and the septum. The extension of the AEDUM areas was significantly smaller than STED areas with CL < 120 ms (21.8 ± 8.2 vs 46.3 ± 20.2; p-value < 0.0001). In 24 patients (60%), AEDUM areas was entirely included in the STED areas with CL < 120 ms. In the three (7.5%) patients with LVA, no correspondence with STED and AEDUM was noted.
CONCLUSIONS: AEDUM and STED maps allow to identify areas of conductive dysfunction as a possible atrial substrate even if a normal voltage is detected.

Although semiconductor metal oxide-based sensors are promising for gas sensing, low-power and room temperature operation (24 ± 1 °C) remains desirable for practical applications particularly considering the request of energy saving or net zero emission. In this study, we demonstrate a Au/SnO2-based ultrasensitive H2S gas sensor with a limit of detection (LOD) of 2 ppb, operating at very low voltages (0.05 to 0.5 V) at room temperature. The Au/SnO2-based sensor showed approximately 7 times higher response (the ratio of change in the current to initial current) of ∼270% and 4 times faster recovery (126 s) compared to the pure SnO2-based sensor when exposed to 500 ppb H2S gas concentration at 0.5 V operating voltage at relative humidity (RH) 17.5 ± 2.5%. The enhancement can be attributed to the catalytic characteristics of AuNPs, increasing the number of adsorbed oxygen species on sensing material surfaces. Additionally, AuNPs aid in forming flower-petal-like Au/SnO2 nanostructures, offering a larger surface area and more active sites for H2S sensing. Moreover, at low voltage (<1 V), the localized dipoles at the Au/SnO2 interface may further enhance the absorption of polar oxygen molecules and hence promote the reaction between H2S and oxygen species. This low-power, ultrasensitive H2S sensor outperforms high-powered alternatives, making it ideal for environmental, food safety, and healthcare applications.

Stretchable organic transistors for skin-like biomedical applications require low-voltage operation to accommodate limited power supply and safe concerns. However, most of the currently reported stretchable organic transistors operate at relatively high voltages. Decreasing their operational voltage while keeping the high mobility still remains a key challenge. Here, the study presents a new dielectric design to achieve high-dielectric constant poly(urea-urethane) (PUU) elastomer, by incorporating a flexible small-molecular diamine crosslinking agent 4-aminophenyl disulfide (APDS) into the main chain of (poly (propylene glycol), tolylene 2,4-diiso-cyanate terminated) (PPG-TDI). Compared with commercial elastomers, the PUU elastomer as dielectric of the stretchable organic transistors shows the outstanding advantages including lower surface roughness (0.33 nm), higher adhesion (45.18 nN), higher dielectric constant (13.5), as well as higher stretchability (896%). The PUU dielectric enables the intrinsically stretchable, all-solution-processed organic transistor to operate at a low operational voltage down to -10 V, while preserving a substantial mobility of 1.39 cm2 V-1 s-1. Impressively, the transistor also demonstrates excellent electrical stability under repeated switching of 10 000 cycles, and remarkable mechanical robustness when stretched up to 100%. The work opens up a new molecular engineering strategy to successfully realize low-voltage high-mobility stretchable all-solution-processed organic transistors.

BACKGROUND: Cerebral computed tomography angiography (CTA) has revolutionized the diagnosis of neurovascular emergencies. Strategies to reduce radiation, a concern for cancer, involve tube voltage and current reduction but with increased noise and inferior image quality. Hence, the objective of the study was to evaluate the quality of images obtained through low-dose radiation and low-contrast volume CTA with an iterative reconstruction (IR) technique versus standard CTA without IR.
METHODS: This prospective trial involved 100 adults requiring cerebral CTA for cerebrovascular diseases. They were split into two groups: one with 120 kVp tube voltage and 80 mL contrast using filtered back projection, and the other with 80 kVp and 30 mL contrast with IR. Evaluation criteria included attenuation values, signal-to-noise ratio, contrast-to-noise ratio, and subjective assessments.
RESULTS: Compared to 120 kVp, 80 kVp showed higher vessel attenuation in the internal (272.91 ± 30.59 vs 405.52 ± 53.08; p < .001) and middle cerebral artery (247.55 ± 29.84 vs 372.55 ± 49.02; p < .001) regions. Brain parenchymal attenuation at the centrum semiovale was lower with 80 kVp (29.12 ± 1.87 vs 24.78 ± 2.94; p < .001), accompanied by higher noise. Signal-to-noise ratio (p < .001) and contrast-to-noise ratio (p < .05) were lower at 80 kVp. Image quality didn\'t significantly differ, and radiation exposure reduced significantly by 70% in the 80 kVp group, suggesting its diagnostic feasibility.
CONCLUSIONS: The 80 kVp protocol for CTA of the cerebral vessels combined with lower contrast volume produces images with similar image quality with significant radiation effective dose and total iodine dose reduction. The 80 kVp protocol holds significant promise for replacing the standard 120 kVp protocol in cerebral CTA.

This paper presents a low-voltage low-power chopper-stabilized differential difference amplifier (DDA) realized using 40 nm CMOS technology. Operating with a supply voltage of 0.5 V, a three-stage DDA has been employed to achieve an open-loop gain of 89 dB, while consuming just 0.74 μW of power. The proposed DDA incorporates feed-forward frequency compensation and a Type II compensator to achieve pole-zero cancellation and damping factor control. The DDA has a unity-gain bandwidth (UGB) of 170 kHz, a phase margin (PM) of 63.98°, and a common-mode rejection ratio (CMRR) of up to 100 dB. This circuit can effectively drive a 50 pF capacitor in parallel with a 300 kΩ resistor. The use of the chopper stabilization technique effectively mitigates the offset and 1/f noise. The chopping frequency of the chopper modulator is 5 kHz. The input noise is 245 nV/sqrt (Hz) at 1 kHz, and the input-referred offset under Monte Carlo cases is only 0.26 mV. Such a low-voltage chopper-stabilized DDA will be very useful for analog signal processing applications. Compared to the reported chopper DDA counterparts, the proposed DDA is regarded as that with one of the lowest supply voltages. The proposed DDA has demonstrated its effectiveness in tradeoff design when dealing with multiple parameters pertaining to power consumption, noise, and bandwidth.

This paper investigates an adaptive body biasing (ABB) circuit to improve the reliability and variability of a low-voltage inductor-capacitor (LC) voltage-controlled oscillator (VCO). The ABB circuit provides VCO resilience to process variability and reliability variation through the threshold voltage adjustment of VCO\'s transistors. Analytical equations considering the body bias effect are derived for the most important relations of the VCO and then the performance is verified using the post-layout simulation results. Under a 0.16% threshold voltage shift, the sensitivity of the normalized phase noise and transconductance of the VCO with the ABB circuit compared to the constant body bias (CBB) decreases by around 8.4 times and 3.1 times, respectively. Also, the sensitivity of the normalized phase noise and transconductance of the proposed VCO under 0.16% mobility variations decreases by around 1.5 times and 1.7 times compared to the CBB, respectively. The robustness of the VCO is also examined using process variation analysis through Monte Carlo and corner case simulations. The post-layout results in the 180 nm CMOS process indicate that the proposed VCO draws a power consumption of only 398 µW from a 0.6 V supply when the VCO frequency is 2.4 GHz. It achieves a phase noise of -123.19 dBc/Hz at a 1 MHz offset and provides a figure of merit (FoM) of -194.82 dBc/Hz.

The integration of organic electronic circuits into real-life applications compels the fulfillment of a range of requirements, among which the ideal operation at a low voltage with reduced power consumption is paramount. Moreover, these performance factors should be achieved via solution-based fabrication schemes in order to comply with the promise of cost- and energy-efficient manufacturing offered by an organic, printed electronic technology. Here, we propose a solution-based route for the fabrication of low-voltage organic transistors, encompassing ideal device operation at voltages below 5 V and exhibiting n-type unipolarization. This process is widely applicable to a variety of semiconducting and dielectric materials. We achieved this through the use of a photo-cross-linked, low-k dielectric interlayer, which is used to fabricate multilayer dielectric stacks with areal capacitances of up to 40 nF/cm2 and leakage currents below 1 nA/cm2. Because of the chosen azide-based cross-linker, the dielectric promotes n-type unipolarization of the transistors and demonstrated to be compatible with different classes of semiconductors, from conjugated polymers to carbon nanotubes and low-temperature metal oxides. Our results demonstrate a general applicability of our unipolarizing dielectric, facilitating the implementation of complementary circuitry of emerging technologies with reduced power consumption.

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Global soil cadmium (Cd(II)) contamination threatens the soil environment, food safety, and human health. Conventional electrokinetic remediation (EKR) and enhancement methods usually operate in strong electric fields, leading to strong side reactions and uneven removal. In this work, to remove Cd(II) from soil effectively in a low-voltage electric field, a new-style electrokinetic-adsorption remediation using double-group electrodes coupled with chitosan-activated carbon composite membranes (DE-EKR-CAC) was developed. Chitosan-activated carbon (CAC) composite membranes were synthesized for easy recovery and reuse of adsorbents. The effects of pH, contact time, initial concentration, and foreign ions on the removal of Cd(II) by the CAC composite membranes were determined. The CAC composite membranes performed well except in a strongly acidic environment (pH = 2.0). The soil pH varied between 3.4 and 5.0 in DE-EKR-CAC, where the CAC composite membranes were applicable. High concentrations of Ca2+ interfered with the adsorption of Cd(II), which means that the selectivity of CAC composite membranes for Cd(II) is not high enough. The Langmuir (R2 = 0.999) and pseudo-second-order kinetic (R2 = 1.0) models revealed the monolayer coverage and chemisorption mechanism, and the maximum adsorption capacity was 40.81 mg/g. Furthermore, SEM, FTIR, and XPS analyses suggest that physical adsorption, complexation of oxygen-containing functional groups, chelation of amino groups, and ion exchange are potential mechanisms for the adsorption of Cd(II) on CAC. DE-EKR-CAC performed better than the group remediated with one set of electrodes, with higher removal efficiencies and more uniform removal. The lowest energy consumption was 3.33 kWh/m3, which is lower than other enhancement methods. Separation of CAC composite membranes from soil is easy, and reuse performance is good. DE-EKR-CAC provides a potential option for Cd(II) removal from soil because of its better performance using low-voltage direct current, low energy consumption, and ease of recycling the adsorbent.