The n-type semiconductor SnO2 with a wide band gap (3.6 eV) is massively used in gas-sensitive materials, but pure SnO2 still suffers from a high operating temperature, low response, and tardy responding speed. To solve these problems, we prepared small-sized pure SnO2 using hydrothermal and freeze-drying methods (SnO2-FD) and compared it with SnO2 prepared using a normal drying method (SnO2-AD). The sensor of SnO2-FD had an ultra-high sensitivity to NO2 at 100 °C with excellent selectivity and humidity stability. The outstanding gas sensing properties are attributed to the modulation of energy band structure and the increased carrier concentration, making it more accessible for electron exchange with NO2. The excellent gas sensing properties of SnO2-FD indicate its tremendous potential as a NO2 sensor.

Thermoelectric materials that can convert thermal energy to electrical energy are stable and long-lasting and do not emit greenhouse gases; these properties render them useful in novel power generation devices that can conserve and utilize lost heat. SiC exhibits good mechanical properties, excellent corrosion resistance, high-temperature stability, non-toxicity, and environmental friendliness. It can withstand elevated temperatures and thermal shock and is well suited for thermoelectric conversions in high-temperature and harsh environments, such as supersonic vehicles and rockets. This paper reviews the potential of SiC as a high-temperature thermoelectric and third-generation wide-bandgap semiconductor material. Recent research on SiC thermoelectric materials is reviewed, and the principles and methods for optimizing the thermoelectric properties of SiC are discussed. Thus, this paper may contribute to increasing the application potential of SiC for thermoelectric energy conversion at high temperatures.

Magnetic Resonance imaging based Electrical Properties Tomography (MR-EPT) is a non-invasive technique that measures the electrical properties (EPs) of biological tissues. In this work, we present and numerically investigate the performance of an unrolled, physics-assisted method for 2D MR-EPT reconstructions, where a cascade of Convolutional Neural Networks is used to compute the contrast update. Each network takes in input the EPs and the gradient descent direction (encoding the physics underlying the adopted scattering model) and returns as output the updated contrast function. The network is trained and tested in silico using 2D slices of realistic brain models at 128 MHz. Results show the capability of the proposed procedure to reconstruct EPs maps with quality comparable to that of the popular Contrast Source Inversion-EPT, while significantly reducing the computational time.

Nano-ferrites, metal oxides, and carbon-based nanomaterials have been used frequently to enhance optical and magnetic prospects for latent applications. Copper ferrite/Graphene Oxide and Zinc Oxide (CuFe2O4/GO/ZnO) ternary nanocomposite synthesized by hydrothermal route showed dramatically good outcomes as the band gap energy value of synthesized nanocomposite approaches to 2.4 eV. Furthermore, the light absorbance of CuFe2O4 increases by adding ZnO and GO. The experimental data revealed the face-centered cubic structure (FCC) of pure spinal ferrite (CuFe2O4) nanoparticles even after adding ZnO and GO. The 2θ peak observed at 31.70° with (220) hkl planes indicates the successful addition of ZnO nanoparticles in CuFe2O4/GO nanocomposite. XRD graph, the absence of characteristic peaks of GO revealed the intercalation of CuFe2O4 nanoparticles with GO layers. In SEM images, agglomeration among CuFe2O4 nanoparticles is observed due to the magnetic interaction of nano-crystallite with a high surface-to-volume (S/V) ratio. VSM can be used to determine the magnetic properties of as-synthesized samples at moderate temperatures under 0-0.5 and ± 5 tesla. In CuFe2O4/GO/ZnO ternary nanocomposite, the saturation magnetization value reduces from 2.071 to 1.365 emu/g due to the addition of ZnO nanoparticles. The loops were narrowed showing a decrease in the coercive field with the addition of ZnO nanoparticles in CuFe2O4/GO ternary nanocomposite material. Moreover, the study of electrical properties of pure CuFe2O4 and CuFe2O4/GO/ZnO ternary nanocomposite revealed that the values of dielectric constant and tangent loss decrease at high frequencies owing to surface charge polarization and intrinsic dipole interactions. The study of the electrical properties of both pure CuFe2O4 and the CuFe2O4/GO/ZnO ternary nanocomposite reveals that the dielectric constant (ε\') and tangent loss (tanδ) exhibit a decreasing trend as the frequency increases. This behavior is attributed to surface charge polarization and intrinsic dipole interactions. At lower frequencies, both samples display elevated values for these properties, which stabilize as the frequency increases beyond 2 MHz. Notably, high AC conductivity is observed in both samples, attributed to increased capacitance and resistance.

Chitosan is a biopolymer with unique properties that have attracted considerable attention in various scientific fields in recent decades. Although chitosan is known for its poor electrical and mechanical properties, there is interest in producing chitosan-based materials reinforced with carbon-based materials to impart exceptional properties such as high electrical conductivity and high Young\'s modulus. This study describes the synergistic effect of carbon-based materials, such as reduced graphene oxide and carbon nanotubes, in improving the electrical, optical, and mechanical properties of chitosan-based films. Our findings demonstrate that the incorporation of reduced graphene oxide influences the crystallinity of chitosan, which considerably impacts the mechanical properties of the films. However, the incorporation of a reduced graphene oxide-carbon nanotube complex not only significantly improves the mechanical properties but also significantly improves the optical and electrical properties, as was demonstrated from the photoluminescence studies and resistivity measurements employing the four-probe technique. This is a promising prospect for the synthesis of new materials, such as biopolymer films, with potential applications in optical, electrical, and biomedical bioengineering applications.

The contact resistance formed between MoS2 and metal electrodes plays a key role in MoS2-based electronic devices. The Schottky barrier height (SBH) is a crucial parameter for determining the contact resistance. However, the SBH is difficult to modulate because of the strong Fermi-level pinning (FLP) at MoS2-metal interfaces. Here, we investigate the FLP effect and the contact types of monolayer and multilayer MoS2-metal van der Waals (vdW) interfaces using density functional theory (DFT) calculations based on Perdew-Burke-Ernzerhof (PBE) level. It has been demonstrated that, compared with monolayer MoS2-metal close interfaces, the FLP effect can be significantly reduced in monolayer MoS2-metal vdW interfaces. Furthermore, as the layer number of MoS2 increases from 1L to 4L, the FLP effect is first weakened and then increased, which can be attributed to the charge redistribution at the MoS2-metal and MoS2-MoS2 interfaces. In addition, the p-type Schottky contact can be achieved in 1L-4L MoS2-Pt, 3L MoS2-Au, and 2L-3L MoS2-Pd vdW interfaces, which is useful for realizing complementary metal oxide semiconductor (CMOS) logic circuits. These findings indicated that the FLP and contact types can be effectively modulated at MoS2-metal vdW interfaces by selecting the layer number of MoS2.

Group-III nitrides have transformed solid-state lighting and are strategically positioned to revolutionize high-power and high-frequency electronics. To drive this development forward, a deep understanding of fundamental material properties, such as charge carrier behavior, is essential and can also unveil new and unforeseen applications. This underscores the necessity for novel characterization tools to study group-III nitride materials and devices. The optical Hall effect (OHE) emerges as a contactless method for exploring the transport and electronic properties of semiconductor materials, simultaneously offering insights into their dielectric function. This non-destructive technique employs spectroscopic ellipsometry at long wavelengths in the presence of a magnetic field and provides quantitative information on the charge carrier density, sign, mobility, and effective mass of individual layers in multilayer structures and bulk materials. In this paper, we explore the use of terahertz (THz) OHE to study the charge carrier properties in group-III nitride heterostructures and bulk material. Examples include graded AlGaN channel high-electron-mobility transistor (HEMT) structures for high-linearity devices, highlighting the different grading profiles and their impact on the two-dimensional electron gas (2DEG) properties. Next, we demonstrate the sensitivity of the THz OHE to distinguish the 2DEG anisotropic mobility parameters in N-polar GaN/AlGaN HEMTs and show that this anisotropy is induced by the step-like surface morphology. Finally, we present the temperature-dependent results on the charge carrier properties of 2DEG and bulk electrons in GaN with a focus on the effective mass parameter and review the effective mass parameters reported in the literature. These studies showcase the capabilities of the THz OHE for advancing the understanding and development of group-III materials and devices.

Thermoplastic polyurethane (TPU) doped with multi-walled carbon nanotubes (MWCNTs) at 1, 3, 5, and 7 wt% has been studied. The effect of MWCNTs on thermal, viscoelastic, and electric properties in the TPU matrix was characterized by differential scanning calorimetry (DSC), dynamic mechanical analysis (DMA), and by impedance spectroscopy. The results show that the thermal, electrical, and viscoelastic properties, such as the glass transition temperature, shifted towards high temperatures. The melting temperature decreased, and the conductivity and the storage modulus increased by 61.5 % and 58.3 %. The previously observed behavior on the films is due to the increase in the mass percentage of carbon nanotubes (CNTs) in the TPU matrix. Also, it can be said that the CNTs were homogeneously dispersed in the TPU matrix, preventing the movement of the polymer chains, and generating channels or connections that increase the conductivity and improve the thermal properties of the material.

The common synthesis approach of reduced graphene oxide (rGO) using toxic reducing agents poses a threat to environmental pollution. This study used banana peel extract as a green reducing agent for the synthesis of rGO. Ultrasonication was assimilated to expedite the synthesis process. For comparison, rGO was also produced by reducing GO with hydrazine treatment under conventional stirring. Both morphological (SEM) and physicochemical (FTIR and XRD) studies have revealed that banana peel extract can reduce GO to rGO, although its reducing effect is much weaker compared to hydrazine. Despite this, the rGO produced using banana peel extract with the assimilation of ultrasonication technique has a greater interlayer spacing than that formed under the conventional stirring method. In terms of electrical properties, the electrical conductance of hydrazine-produced rGO (5.69 × 10-6 S) is higher than the banana peel extract-produced rGO (3.55 × 10-6 S - 4.56 × 10-6 S). Interestingly, it was found that most of the rGO produced by banana peel extract under ultrasound assistance has higher or comparable electrical conductance compared to the rGO produced by banana peel extract under stirring method. This implies the feasibility of using short-period ultrasound to replace conventional stirring in rGO synthesis.

The physical properties as well as thermal and electrical stability of copper particles can be improved by surface protection, which mainly depends on the coating material. Our study was, therefore, focused on the rheological, thermal, mechanical and electrical characterization of polymer composites by comparing uncoated (Cu), silver-coated (Cu@Ag) and silica-coated (Cu@Si) copper flakes in low-density polyethylene at various volume concentrations (up to 40%). Interactions among particles were investigated by rheological properties, as these indicate network formation (geometrical entanglement), which is important for mechanical reinforcement as well as establishing an electric pathway (electrical percolation). The results showed that geometrical and electrical percolation were the same for Cu and Cu@Si, ~15%, while, surprisingly, Cu@Ag exhibited much lower percolation, ~7.5%, indicating the fusion of the Ag coating material, which also decreased crystal growth (degree of crystallinity). Furthermore, the magnitude of the rheological and mechanical response remained the same for all investigated materials, indicating that the coating materials do not provide any load transfer capabilities. However, they profoundly affect electron transfer, in that, Cu@Ag exhibited superior conductivity (74.4 S/m) compared to Cu (1.7 × 10-4 S/m) and Cu@Si (1.5 × 10-10 S/m). The results obtained are important for the design of advanced polymer composites for various applications, particularly in electronics where enhanced electrical conductivity is desired.