Recently, polarity-dependent shock failures were reported in implantable cardioverter-defibrillators caused by structural failure in the high-voltage feedthrough. Short circuits may occur when the right ventricular coil is cathodal for phase 1 of biphasic shocks (cathodal shock). This viewpoint proposes a mechanism for observed polarity dependence and considers whether the same mechanism may apply in other shock-induced, short circuits. Implantable cardioverter-defibrillator connections to the lead traverse feedthroughs into the hermetically sealed housing (\"Can\"). The feedthrough comprises 2 concentric, conducting metal cylinders, the inner pin-conductor to the right ventricular coil and outer Can, separated by impermeable insulation. Shock failure depends on 3 conditions: 1) development of a fluid layer in the feedthrough, creating a conduction path in parallel with the shock pathway; 2) the radial gradient of the electric field in the fluid, so resistive heating during a shock vaporizes water to form a high-resistance gas bubble around the pin; and 3) field emission of electrons at the cathode, with rate and energy dependent on the field\'s strength and the cathode\'s potential-energy barrier to emission. For cathodal shocks, electrons emitted at the metal pin may initiate an ionization avalanche in the gas until it \"breaks down\" into a low-resistance plasma, resulting in a short circuit. For anodal shocks, the effective cathode is the liquid-gas interface, where the field is weaker than at the pin. Additionally, solvated electrons in aqueous solution must overcome a higher potential-energy barrier to be emitted. This permits the high-resistance gas bubble to stabilize so that the shock is completed.

Electrical breakdown is an important physical phenomenon in power equipment and electronic devices. Recently, the mechanism of AC and DC breakdown has been preliminarily revealed as electrode-dielectric interface breakdown and bulk breakdown, respectively, based on space charge dynamics through numerical calculations. However, the AC breakdown mechanism still lacks enough direct experimental support, which restricts further understanding and the design and development of electrical structures. Here, in this study, LDPE films with various thicknesses ranging from 33 μm to 230 μm were surface modified with ozone for different durations to experimentally investigate DC and AC breakdown mechanism. The results indicate that carbonyl groups (C=O) were introduced onto the film surface, forming shallow surface traps and leading to a decreased average trap depth and an increased trap density. Such a surface oxidation modulated trap distribution led to enhanced space charge injection and bulk electrical field distortion, which decreased DC breakdown strength as the oxidation duration went longer, in all film thicknesses. However, such decreases in breakdown strength occurred only in films below 55 μm under AC stresses, as the enhanced electrical field distortion at the electrode-dielectric interface was more obvious and dominating in thin films. These experimental results further confirm the proposed electrode-dielectric interface breakdown of dielectric films and provide new understandings of space charge modulated electrical breakdown, which fulfills dielectric breakdown theory and benefits the miniaturization of power equipment and electronic devices.

We directly measure the three-dimensional movement of intrinsic point defects driven by applied electric fields inside ZnO nano- and micro-wire metal-semiconductor-metal device structures. Using depth- and spatially resolved cathodoluminescence spectroscopy (CLS) in situ to map the spatial distributions of local defect densities with increasing applied bias, we drive the reversible conversion of metal-ZnO contacts from rectifying to Ohmic and back. These results demonstrate how defect movements systematically determine Ohmic and Schottky barriers to ZnO nano- and microwires and how they can account for the widely reported instability in nanowire transport. Exceeding a characteristic threshold voltage, in situ CLS reveals a current-induced thermal runaway that drives the radial diffusion of defects toward the nanowire free surface, causing VO defects to accumulate at the metal-semiconductor interfaces. In situ post- vs pre-breakdown CLS reveal micrometer-scale wire asperities, which X-ray photoelectron spectroscopy (XPS) finds to have highly oxygen-deficient surface layers that can be attributed to the migration of preexisting VO species. These findings show the importance of in-operando intrinsic point-defect migration during nanoscale electric field measurements in general. This work also demonstrates a novel method for ZnO nanowire refinement and processing.

Ultralow-k materials used in high voltage devices require mechanical resilience and electrical and dielectric stability even when subjected to mechanical loads. Existing devices with organic polymers suffer from low thermal and mechanical stability while those with inorganic porous structures struggle with poor mechanical integrity. Recently, 3D hollow-beam nanolattices have emerged as promising candidates that satisfy these requirements. However, their properties are maintained for only five stress cycles at strains below 25%. Here, we demonstrate that alumina nanolattices with different relative density distributions across their height elicit a deterministic mechanical response concomitant with a 1.5-3.3 times higher electrical breakdown strength than nanolattices with uniform density. These density-variant nanolattices exhibit an ultralow-k of ≈1.2, accompanied by complete electric and dielectric stability and mechanical recoverability over 100 cyclic compressions to 62.5% strain. We explain the enhanced insulation and long-term cyclical stability by the bi-phase deformation where the lower-density region protects the higher-density region as it is compressed before the higher-density region, allowing to simultaneously possess high strength and ductility like composites. This study highlights the superior electrical performance of the bi-phase nanolattice with a single interface in providing stable conduction and maximum breakdown strength.

Investigating the energy dissipation in micro- and nanoscale is fundamental to improve the performance and reliability of two-dimensional (2D) electronics. Recently, 2D platinum selenide (PtSe2) has drawn extensive attention in developing next-generation functional devices due to its distinctive fusion of versatile properties. Toward practical applications of PtSe2 devices, it is essential to understand the interfacial thermal properties between PtSe2 and its substrate. Among them, the thermal boundary conductance (TBC) has played a critical role for out-of-plane heat dissipation of PtSe2 devices. Here, we identify the energy dissipation behavior of multilayer PtSe2 devices and extract the actual TBC value of the PtSe2/SiO2 interface by Raman thermometry with electrical bias. The obtained TBC value is about 8.6 MW m-2 K-1, and it belongs to the low end of as-known solid-solid interfaces, suggesting possible applications regarding thermoelectric devices or others reliant on a large temperature gradient. Furthermore, the maximum current density of the PtSe2 device determines its threshold power, which is crucial for improving device design and guiding future applications. Therefore, we explore the electrical breakdown profile of the multilayer PtSe2 device, revealing the breakdown current density of 17.7 MA cm-2 and threshold power density of 0.2 MW cm-2, which are larger than typical values for commonly used aluminum and copper. These results provide key insights into the energy dissipation of PtSe2 devices and make PtSe2 an excellent candidate for thermal confinement applications and nanometer-thin interconnects, which will benefit the development of energy-efficient functional 2D devices.

An extensive study has been conducted on a series of AlGaN/GaN high electron mobility transistor (HEMT) samples using metalorganic vapour phase epitaxy, to investigate the influence of growth modes for GaN buffer layers on device performance. The unintentional doping concentration and screw dislocation density are significantly lower in the samples grown with our special two-dimensional (2D) growth approach, compared to a widely-used two-step method combining the 2D and 3D growth. The GaN buffer layers grown by the 2D growth approach have achieved an unintentional doping density of 2 × 1014 cm-3, two orders lower than 1016 cm-3 of the GaN samples grown using a conventional two-step method. High-frequency capacitance measurements show that the samples with lower unintentional doping densities have lower buffer leakage and higher breakdown limits. This series of samples have attained sub-nA/mm leakages, a high breakdown limit of 2.5 MV/cm, and a saturation current density of about 1.1 A/mm. It indicates that our special 2D growth approach can effectively lessen the unintentional doping in GaN buffer layers, leading to low buffer leakage and high breakdown limits of GaN/AlGaN HEMTs.

Recently, there have been numerous studies on utilizing surface treatments or photosensitizing layers to improve photodetectors based on 2D materials. Meanwhile, avalanche breakdown phenomenon has provided an ultimate high-gain route toward photodetection in the form of single-photon detectors. Here, the authors report ultrasensitive avalanche phototransistors based on monolayer MoS2 synthesized by chemical vapor deposition. A lower critical field for the electrical breakdown under illumination shows strong evidence for avalanche breakdown initiated by photogenerated carriers in MoS2 channel. By utilizing the photo-initiated carrier multiplication, their avalanche photodetectors exhibit the maximum responsivity of ≈3.4 × 107 A W-1 and the detectivity of ≈4.3 × 1016 Jones under a low dark current, which are a few orders of magnitudes higher than the highest values reported previously, despite the absence of any additional chemical treatments or photosensitizing layers. The realization of both the ultrahigh photoresponsivity and detectivity is attributed to the interplay between the carrier multiplication by avalanche breakdown and carrier injection across a Schottky barrier between the channel and metal electrodes. This work presents a simple and powerful method to enhance the performance of photodetectors based on carrier multiplication phenomena in 2D materials and provides the underlying physics of atomically thin avalanche photodetectors.

Electrical breakdown is a critical problem in electronics. In molecular electronics, it becomes more problematic because ultrathin molecular monolayers have delicate and defective structures and exhibit intrinsically low breakdown voltages, which limit device performances. Here, we show that interstitially mixed self-assembled monolayers (imSAMs) remarkably enhance electrical stability of molecular-scale electronic devices without deteriorating function and reliability. The SAM of the sterically bulky matrix (SC11BIPY rectifier) molecule is diluted with a skinny reinforcement (SCn) molecule via the new approach, so-called repeated surface exchange of molecules (ReSEM). Combined experiments and simulations reveal that the ReSEM yields imSAMs wherein interstices between the matrix molecules are filled with the reinforcement molecules and leads to significantly enhanced breakdown voltage inaccessible by traditional pure or mixed SAMs. Thanks to this, bias-driven disappearance and inversion of rectification is unprecedentedly observed. Our work may help to overcome the shortcoming of SAM\'s instability and expand the functionalities.

Through years of development, the triboelectric nanogenerator (TENG) has been demonstrated as a burgeoning efficient energy harvester. Plenty of efforts have been devoted to further improving the electric output performance through material/surface optimization, ion implantation or the external electric circuit. However, all these methods cannot break through the fundamental limitation brought by the inevitable electrical breakdown effect, and thus the output energy density is restricted. Here, a method for enhancing the threshold output energy density of TENGs is proposed by suppressing the breakdown effects in the high-pressure gas environment. With that, the output energy density of the contact-separation mode TENG can be increased by over 25 times in 10 atm than that in the atmosphere, and that of the freestanding sliding TENG can also achieve over 5 times increase in 6 atm. This research demonstrates the excellent suppression effect of the electric breakdown brought by the high-pressure gas environment, which may provide a practical and effective technological route to promote the output performance of TENGs.

Carbon-based piezoresistive nanomaterials are widely used for the fabrication of flexible sensors. Although our previous work demonstrated that an electrical breakdown (EBD) process can endow a graphene/polyimide (G/PI) composite with piezoresistivity, the formation of EBD-induced electrical traces with high consistency in bulk nanocomposites remains a technical challenge. With the aim of developing highly sensitive flexible strain sensors using a batch fabrication process, we introduce herein a microscale EBD (μEBD) method to form localized piezoresistors with diverse shapes in a G/PI thin film. The results of scanning electron microscopy, Raman spectroscopy, and electromechanical tests indicate that high piezoresistivity is derived from the high porosity of the carbonized conductive traces generated by the μEBD process. The gauge factor of the μEBD-treated G/PI strain sensor is over 20 times greater than that of the as-prepared G/PI film, and the sensitivities of the strain sensors can be tuned by varying the applied current in the μEBD process. We also demonstrate the potential applications of μEBD-treated G/PI strain sensors in the fields of finger gesture detection, sound pressure measurement, and airflow sensing.