Extreme-ultraviolet (EUV) photolithography, which enables the high-throughput production of well-defined patterns with critical dimensions on the scale of several nanometers, is essential for the fabrication of a highly integrated semiconductor. The full exploitation of EUV lithographic techniques necessitates the development of photoresist (PR) materials with both high EUV sensitivity and a long shelf-life. However, despite notable advances, the available library of EUV PR materials remains limited. Here we report EUV PRs capable of forming preorganized layers consisting of ladder-structured tetranuclear stannoxanes. Single-crystal X-ray structure analyses reveal a close interlayer distance of 8.5 Å through interdigitation of the pseudoaxial butyl chains. The developed EUV PR materials exhibit high solubility in organic solvents commonly used in semiconductor processing, enabling the preparation of PR solutions with superior wettability and uniform film-forming ability on Si wafer substrates. These PR solutions also demonstrate notable resistance to hydrolytic decomposition for as long as 1 month, indicating a long shelf-life. Our PR materials enabled negative-tone patterning processes that involved a solubility decrease upon irradiation. The presence of chromophoric ligands makes our PR materials compatible with conventional UV photolithography, through photochemical reactions involving carbonyl units. In addition, e-beam and EUV lithography could produce fine line patterns of our PRs, with critical dimensions of 20 and 15 nm, respectively. Our research showcases the potential of layer-ordered organooxotin clusters for EUV PR applications.

To break the resolution limitation of traditional resists, more work is needed on non-chemically amplified resists (non-CARs). Non-CARs based on iodonium salt modified polystyrene (PS-I) were prepared with controllable molecular weight and structure. The properties of the resist can be adjusted by the uploading of iodonium salts on the polymer chain, the materials with a higher proportion of iodonium salts show better lithography performance. By comparing contrast curves and quality of the lithographic patterns, the optimum developing condition of 4-methyl-2-pentanone and ethyl alcohol (v:v = 1:7) was selected. The high-resolution stripes of 15 nm half-pitch (HP) can be achieved by PS-I0.58in e-beam lithography (EBL). PS-I0.58shows the advanced lithography performance in the patterns of 16 nm HP and 18 nm HP stripes with low line edge roughness (3.0 nm and 2.4 nm). The resist shows excellent potential for further pattern transfer, the etch selectivity of resist PS-I0.58to the silicon was close to 12:1. The lithographic mechanism of PS-I was investigated by experimental and theoretical calculation, which indicates the polarity of materials changes results in the solubility switch. This work provides a new option and useful guidelines for the development of high-resolution resist.

In the context of the quest for the Organic Laser Diode, we present the multiscale fabrication process optimization of mixed-order distributed-feedback micro-cavities integrated in nanosecond-short electrical pulse-ready organic light-emitting diodes (OLEDs). We combine ultra-short pulsed electrical excitation and laser micro-cavities. This requires the integration of a highly resolved DFB micro-cavity with an OLED stack and with microwave electrodes. In a second challenge, we tune the cavity resonance precisely to the electroluminescence peak of the organic laser gain medium. This requires precise micro-cavity fabrication performed using e-beam lithography to pattern gratings with a precision in the nanometer scale. Optimal DFB micro-cavities are obtained with 300 nm thick hydrogen silsesquioxane negative-tone e-beam resist on 50 nm thin indium tin oxide anode exposed with a charge quantity per area (i.e., dose) of 620 µC/cm2, developed over 40 min in tetramethylammonium hydroxide diluted in water. We show that the integration of the DFB micro-cavity does not hinder the pulsed electrical operability of the device, which exhibits a peak current density as high as 14 kA/cm2.

Aberration-corrected electron-beam lithography (AC-EBL) using ultra-thin electron transparent membranes has achieved single-digit nanometer resolution in two widely used electron-beam resists: poly (methyl methacrylate) (PMMA) and hydrogen silsesquioxane. On the other hand, AC-EBL implementation on thick, electron-opaque substrates is appealing for conventional top-down fabrication of quantum devices with nanometer-scale features. To investigate the performance of AC-EBL on thick substrates, we measured the lithographic point spread function of a 200 keV aberration-corrected scanning transmission electron microscope by defining both positive and negative patterns in PMMA thin films, spin-cast on thick SiO2/Si substrates. We present the problems encountered during pre-exposure beam focusing and discuss methods to overcome them. In addition, applying some of these methods using commercial 50 nm thick SiNXmembranes with thick Si support frames, we printed arrays of holes in PMMA with pitches around 26 nm on SiNX/Si substrates with increasing Si thickness. Our results show that proximity effects from even 50 nm thick SiNXmembranes limit hole arrays to 20 nm pitch; however, down to this limit, the effect of the substrate thickness on the pattern quality is minimal. These results highlight the need for novel resists less susceptible to proximity effects, or resists which can be used directly, after development, as the dielectric material in periodic gates in 2D quantum devices.

Twisted moiré photonic crystal is an optical analog of twisted graphene or twisted transition metal dichalcogenide bilayers. In this paper, we report the fabrication of twisted moiré photonic crystals and randomized moiré photonic crystals and their use in enhanced extraction of light in light-emitting diodes (LEDs). Fractional diffraction orders from randomized moiré photonic crystals are more uniform than those from moiré photonic crystals. Extraction efficiencies of 76.5%, 77.8% and 79.5% into glass substrate are predicted in simulations of LED patterned with twisted moiré photonic crystals, defect-containing photonic crystals and random moiré photonic crystals, respectively, at 584 nm. Extraction efficiencies of optically pumped LEDs with 2D perovskite (BA)2(MA)n-1PbnI3n+1ofn= 3 and (5-(2\'-pyridyl)-tetrazolato)(3-CF3-5-(2\'-pyridyl)pyrazolato) platinum(II) (PtD) have been measured.

Ultrathin hybrid perovskites, with exotic properties and two-dimensional geometry, exhibit great potential in nanoscale optical and optoelectronic devices. However, it is still challenging for them to be compatible with high-resolution patterning technology toward miniaturization and integration applications, as they can be readily damaged by the organic solvents used in standard lithography processes. Here, a flexible three-step method is developed to make high-resolution multicolor patterning on hybrid perovskite, particularly achieved on a single nanosheet. The process includes first synthesis of precursor PbI2 , then e-beam lithography and final conversion to target perovskite. The patterns with linewidth around 150 nm can be achieved, which can be applied in miniature optoelectronic devices and high-resolution displays. As an example, the channel length of perovskite photodetectors can be down to 126 nm. Through deterministic vapor-phase anion exchange, a perovskite nanosheet can not only gradually alter the color of the same pattern in a wide wavelength range, but also display different colors simultaneously. The authors are optimistic that the method can be applied for unlimited perovskite types and device configurations for their high-integrated miniature applications.

Methods for patterning neurons in vitro have gradually improved and are used to investigate questions that are difficult to address in or ex vivo. Though these techniques guide axons between groups of neurons, multiscale control of neuronal connectivity, from circuits to synapses, is yet to be achieved in vitro. As studying neuronal circuits with synaptic resolution in vivo poses significant challenges, we present an in vitro alternative to validate biophysical and computational models. In this work we use a combination of electron beam lithography and photolithography to create polydimethylsiloxane (PDMS) structures with features ranging from 150 nm to a few millimeters. Leveraging the difference between average axon and dendritic spine diameters, we restrict axon growth while allowing spines to pass through nanochannels to guide synapse formation between small groups of neurons (i.e., nodes). We show this technique can be used to generate large numbers of isolated feed-forward circuits where connections between nodes are restricted to regions connected by nanochannels. Using a genetically encoded calcium indicator in combination with fluorescently tagged postsynaptic protein, PSD-95, we demonstrate functional synapses can form in this region.

Patterned elements of permalloy (Py) with a thickness as large as 300 nm have been defined by electron beam lithography on X-ray-transparent 50 nm thick membranes in order to characterize their magnetic structure via Magnetic Transmission X-ray Microscopy (MTXM). To avoid the situation where the fragility of the membranes causes them to break during the lithography process, it has been found that the spin coating of the resist must be applied in two steps. The MTXM results show that our samples have a central domain wall, as well as other types of domain walls, if the nanostructures are wide enough.

In a specific biosensing application, a nanoplasmonic sensor chip has been tested by an experimental setup based on an aluminum holder and two plastic optical fibers used to illuminate and collect the transmitted light. The studied plasmonic probe is based on gold nanograting, realized on the top of a Poly(methyl methacrylate) (PMMA) chip. The PMMA substrate could be considered as a transparent substrate and, in such a way, it has been already used in previous work. Alternatively, here it is regarded as a slab waveguide. In particular, we have deposited upon the slab surface, covered with a nanograting, a synthetic receptor specific for bovine serum albumin (BSA), to test the proposed biosensing approach. Exploiting this different experimental configuration, we have determined how the orientation of the nanostripes forming the grating pattern, with respect to the direction of the input light (longitudinal or orthogonal), influences the biosensing performances. For example, the best limit of detection (LOD) in the BSA detection that has been obtained is equal to 23 pM. Specifically, the longitudinal configuration is characterized by two observable plasmonic phenomena, each sensitive to a different BSA concentration range, ranging from pM to µM. This aspect plays a key role in several biochemical sensing applications, where a wide working range is required.

Graphene nanostructures are widely perceived as a promising material for fundamental components; their high-performance electronic properties offer the potential for the construction of graphene nanoelectronics. Numerous researchers have paid attention to the fabrication of graphene nanostructures, based on both top-down and bottom-up approaches. However, there are still some unavoidable challenges, such as smooth edges, uniform films without folds, and accurate dimension and location control. In this work, a direct writing method was reported for the in-situ preparation of a high-resolution graphene nanostructure of controllable size (the minimum feature size is about 15 nm), which combines the advantages of e-beam lithography and copper-catalyzed growth. By using the Fourier infrared absorption test, we found that the hydrogen and oxygen elements were disappearing due to knock-on displacement and the radiolysis effect. The graphene crystal is also formed via diffusion and the local heating effect between the e-beam and copper substrate, based on the Raman spectra test. This simple process for the in-situ synthesis of graphene nanostructures has many promising potential applications, including offering a way to make nanoelectrodes, NEMS cantilever resonant structures, nanophotonic devices and so on.