凭借它们迷人的特性,新兴的二维(2D)材料提供了制备高性能红外(IR)探测器的创新方法。然而,由于严重的界面复合,二维红外光电探测器的当前性能仍低于实际应用的要求,接触电阻急剧上升,和恶化的金属导电性在纳米尺度。这里,我们介绍了一种具有PtSe2/GaAs结构的垂直势垒异质结,该结构结合了过渡金属硫化物与拓扑半金属的优异光电特性,这允许可调带隙和高载流子迁移率。使用湿转移法制造异质结。异质结构表现出显著的整流行为和光伏效应,这使得它可以在零偏置下作为自驱动光电探测器运行。在零偏置电压下850nm处的光响应参数为67.2mAW-1,6.7×1012Jones,9.8%,3.8×105,164μs,和198μs的响应度,特异性检测,外量子效率,Ilight/Idark比率,上升时间,和下降时间,分别。此外,异质结对从紫外到近红外(360-1550nm)的宽光谱带高度敏感。同时,这种异质结构在红外偏振光检测和室温高分辨率红外成像中具有重要的应用潜力。异质结的优异性能使其非常适合高性能,自供电红外检测。
With their fascinating properties, emerging two-dimensional (2D) materials offer innovative ways to prepare high-performance infrared (IR) detectors. However, the current performance of 2D IR photodetectors is still below the requirements for practical application owing to the severe interfacial recombination, sharply raised contact resistance, and deteriorated metal conductivity at nanoscale. Here, we introduce a vertical barrier heterojunction with a structure of PtSe2/GaAs that combines the excellent optoelectronic properties of transition metal sulfides with topological semi-metals, which allows for an adjustable bandgap and high carrier mobility. The heterojunction was fabricated using the wet transfer method. The heterostructures show significant rectification behaviors and photovoltaic effects, which allow it to operate as a self-driven photodetector at zero bias. The photoresponse parameters at 850 nm with zero bias voltage are 67.2 mA W-1, 6.7 × 1012 Jones, 9.8%, 3.8 × 105, 164 μs, and 198 μs for the responsivity, specific detectivity, external quantum efficiency, Ilight/Idark ratio, rise time, and fall time, respectively. Moreover, the heterojunction is highly sensitive to a wide spectral band from ultraviolet to near-infrared (360-1550 nm). At the same time, this heterostructure demonstrates significant potential for applications in IR polarized light detection and room-temperature high-resolution IR imaging. The excellent properties of the heterojunction make it well-suited for high-performance, self-powered IR detection.