Silicon vacancy (VSi) centers in 4H-silicon carbide have emerged as a strong candidate for quantum networking applications due to their robust electronic and optical properties, including a long spin coherence lifetime and bright, stable emission. Here, we report the integration of VSi centers with a plasmonic nanocavity to Purcell enhance the emission, which is critical for scalable quantum networking. Employing a simple fabrication process, we demonstrate plasmonic cavities that support a nanoscale mode volume and exhibit an increase in the spontaneous emission rate with a measured Purcell factor of up to 48. In addition to investigating the optical resonance modes, we demonstrate an improvement in the optical stability of the spin-preserving resonant optical transitions relative to the radiation-limited value. The results highlight the potential of nanophotonic structures for advancing quantum networking technologies and emphasize the importance of optimizing emitter-cavity interactions for efficient quantum photonic applications.

Two-dimensional ultrasonic-assisted grinding (2D-UAG) has exhibited advantages in improving the machining quality of hard and brittle materials. However, the grinding mechanism in this process has not been thoroughly revealed due to the complicated material removal behaviors. In this study, multi-step 2D-UAG experiments of silicon carbide are conducted to investigate the effects of machining parameters on surface quality. The experimental results demonstrate that the tool amplitude and the workpiece amplitude have similar effects on surface roughness. In the rough grinding stage, the surface roughness decreases continuously with increasing ultrasonic amplitudes and the material is mainly removed by brittle fracture with different surface defects. Under semi-finishing and finishing grinding steps, the surface roughness first declines and then increases as the tool amplitude or workpiece amplitude grows from 0 μm to 8 μm and the inflection point appears around 4 μm. The surface damage contains small-sized pits with band-like distribution and localized grooves. Furthermore, the influences of cutting parameters on surface quality are similar to those in conventional grinding. Discussions of the underlying mechanisms for the experimental phenomena are also provided based on kinematic analysis. The conclusions gained in this study can provide references for the optimization of machining parameters in 2D-UAG of hard and brittle materials.

Epitaxial bilayer graphene, grown by chemical vapor deposition on SiC substrates without silicon sublimation, is crucial material for graphene field effect transistors (GFETs). Rigorous characterization methods, such as atomic force microscopy and Raman spectroscopy, confirm the exceptional quality of this graphene. Post-nanofabrication, extensive evaluation of DC and high-frequency properties enable the extraction of critical parameters such as the current gain (fmax) and cut-off frequency (ft) of hundred transistors. The Raman spectra analysis provides insights into material property, which correlate with Hall mobilities, carrier densities, contact resistance and sheet resistance and highlights graphene\'s intrinsic properties. The GFETs\' performance displays dispersion, as confirmed through the characterization of multiple transistors. Since the Raman analysis shows relatively homogeneous surface, the variation in Hall mobility, carrier densities and contact resistance cross the wafer suggest that the dispersion of GFET transistor\'s performance could be related to the process of fabrication. Such insights are especially critical in integrated circuits, where consistent transistor performance is vital due to the presence of circuit elements like inductance, capacitance and coplanar waveguides often distributed across the same wafer.

In this study, to enhance the cutting efficiency and precision of the chip while minimizing waste from cutting damage, molecular dynamics simulation is used to investigate the formation mechanism of defects and cracks of silicon carbide crystals during the laser stealth dicing. The results showed that the high thermal stress generated by the laser scanning induced the production and expansion of cracks. Thus, the crack propagates in the direction of [100], and subsequently forms branches in the directions of [101] and [101‾]. It also can be found that the silicon carbide crystals produced dislocation slip, and the dislocation lines moved along the slip surface, which impeded the crack extension in the directions of [101‾] and [1‾01‾]. In addition, atomic phase transformation and loss is occurred under the high-temperature environment of the laser heating process. Cubic diamond crystal structure atoms are partially transformed into amorphous structure, while a small portion transformed into hexagonal diamond structure. The crystal structural arranged orderliness temporarily increased and then rapidly decreased due to prefabrication defects, and new unknown crystal structures are produced.

Solid state quantum emitters are a prime candidate in distributed quantum technologies since they inherently provide a spin-photon interface. An ongoing challenge in the field, however, is the low photon extraction due to the high refractive index of typical host materials. This challenge can be overcome using photonic structures. Here, we report the integration of V2 centers in a cavity-based optical antenna. The structure consists of a silver-coated, 135 nm-thin 4H-SiC membrane functioning as a planar cavity with a broadband resonance yielding a theoretical photon collection enhancement factor of ∼34. The planar geometry allows us to identify over 20 single V2 centers at room temperature with a mean (maximum) count rate enhancement factor of 9 (15). Moreover, we observe 10 V2 centers with a mean absorption line width below 80 MHz at cryogenic temperatures. These results demonstrate a photon collection enhancement that is robust to the lateral emitter position.

High-spin defects (color centers) in wide-gap semiconductors are considered as a basis for the implementation of quantum technologies due to the unique combination of their spin, optical, charge, and coherent properties. A silicon carbide (SiC) crystal can act as a matrix for a wide variety of optically active vacancy-type defects, which manifest themselves as single-photon sources or spin qubits. Among the defects, the nitrogen-vacancy centers (NV) are of particular importance. This paper is devoted to the application of the photoinduced electron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) techniques at a high-frequency range (94 GHz) to obtain unique information about the nature and properties of NV defects in SiC crystal of the hexagonal 4H and 6H polytypes. Selective excitation by microwave and radio frequency pulses makes it possible to determine the microscopic structure of the color center, the zero-field splitting constant (D = 1.2-1.3 GHz), the phase coherence time (T2), and the values of hyperfine (≈1.1 MHz) and quadrupole (Cq ≈ 2.45 MHz) interactions and to define the isotropic (a = -1.2 MHz) and anisotropic (b = 10-20 kHz) contributions of the electron-nuclear interaction. The obtained data are essential for the implementation of the NV defects in SiC as quantum registers, enabling the optical initialization of the electron spin to establish spin-photon interfaces. Moreover, the combination of optical, microwave, and radio frequency resonant effects on spin centers within a SiC crystal shows the potential for employing pulse EPR and ENDOR sequences to implement protocols for quantum computing algorithms and gates.

This article presents research on the influence of reduced graphene oxide on the mechanical properties of silicon carbide matrix composites sintered with the use of the Spark Plasma Sintering method. The produced sinters were subjected to a three-point bending test. An increase in flexural strength was observed, which reaches a maximum value of 503.8 MPa for SiC-2 wt.% rGO composite in comparison to 323 MPa for the reference SiC sample. The hardness of composites decreases with the increase in rGO content down to 1475 HV10, which is correlated with density results. Measured fracture toughness values are burdened with a high standard deviation due to the presence of rGO agglomerates. The KIC reaches values in the range of 3.22-3.82 MPa*m1/2. Three main mechanisms responsible for the increase in the fracture toughness of composites were identified: bridging, deflecting, and branching of cracks. Obtained results show that reduced graphene oxide can be used as a reinforcing phase to the SiC matrix, with an especially visible impact on flexural strength.

The pursuit of increased efficiency of photoelectric energy conversion through optimized semiconductor structures remains highly competitive, with current results yet to align with broad expectations. In this study, we discover a significant enhancement in photocurrent performance of a p-3C-SiC nanothin film on p-Si/n-Si double junction (DJ) heterostructure that integrates p-3C-SiC/p-Si heterojunction and p-Si/n-Si homojunction. The vertical photocurrent (VPC) and vertical photoresponsivity exhibit a substantial enhancement in the DJ heterostructure, surpassing by a maximum of 43-fold compared to the p-3C-SiC/n-Si single junction (SJ) counterpart. The p-3C-SiC layer and n-Si substrate of the two heterostructures have similar material and geometrical properties. More importantly, the fabrication costs for the DJ and SJ heterostructure devices are comparable. Our results demonstrate a significant potential for using DJ devices in energy harvesters, micro/nano electromechanical systems, and sensing applications. This research may also lead to the creation of advanced optoelectronic devices using DJ structures, where employing various semiconductor materials to achieve exceptional performance through the application of the concept and theoretical model described in this work.

In this paper, a novel 4H-SiC deep-trench super-junction MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a split-gate is proposed and theoretically verified by Sentaurus TCAD simulations. A deep trench filled with P-poly-Si combined with the P-SiC region leads to a charge balance effect. Instead of a full-SiC P region in conventional super-junction MOSFET, this new structure reduces the P region in a super-junction MOSFET, thus helping to lower the specific on-resistance. As a result, the figure of merit (FoM, BV2/Ron,sp) of the proposed new structure is 642% and 39.65% higher than the C-MOS and the SJ-MOS, respectively.

In this study, Silicon Carbide (SiC) nanoparticle-based serigraphic printing inks were formulated to fabricate highly sensitive and wide temperature range printed thermistors. Inter-digitated electrodes (IDEs) were screen printed onto Kapton® substrate using commercially avaiable silver ink. Thermistor inks with different weight ratios of SiC nanoparticles were printed atop the IDE structures to form fully printed thermistors. The thermistors were tested over a wide temperature range form 25 °C to 170 °C, exhibiting excellent repeatability and stability over 15 h of continuous operation. Optimal device performance was achieved with 30 wt.% SiC-polyimide ink. We report highly sensitive devices with a TCR of -0.556%/°C, a thermal coefficient of 502 K (β-index) and an activation energy of 0.08 eV. Further, the thermistor demonstrates an accuracy of ±1.35 °C, which is well within the range offered by commercially available high sensitivity thermistors. SiC thermistors exhibit a small 6.5% drift due to changes in relative humidity between 10 and 90%RH and a 4.2% drift in baseline resistance after 100 cycles of aggressive bend testing at a 40° angle. The use of commercially available low-cost materials, simplicity of design and fabrication techniques coupled with the chemical inertness of the Kapton® substrate and SiC nanoparticles paves the way to use all-printed SiC thermistors towards a wide range of applications where temperature monitoring is vital for optimal system performance.