目的:使用共振频率分析测量方法确定种植体周围炎过程中发生的骨丢失与植入物稳定性变化之间的关系。
方法:将40个自攻植入物放置在牛肋骨中。对于每组10个植入物,骨损失为0毫米,建立4mm(模拟骨损失的1/3)和8mm(模拟骨损失的2/3)。用牙周探针进行截骨术测量。对于每个植入物,RFA由同一操作者使用OSSTELLBEACON系统测量。
结果:放置的40个植入物的初始ISQ值超过70的值,反映出VL方向的平均值为73,MD方向的平均值为74.8。在前庭方面进行骨开裂的10个植入物中的ISQ测量反映出随着骨丢失的加深,ISQ值降低。当在两个相对面(V和L)产生骨丢失时,当2/3的植入物受到影响时,观察到ISQ值下降幅度更大.当损失为2/3时,在VL方向上的测量的平均值小于70。
结论:当骨丢失仅发生在植入物的一侧时,ISQ值下降,但植入物保持良好的稳定性。当植入物的两个相对侧受到影响时,也会发生同样的情况,未受影响的一侧的ISQ值下降最少。
To determine the relationship between bone loss that occurs during the peri-implantitis process and variations in implant stability using resonance frequency analysis (RFA) measurement methods.
Forty selftapping implants were placed in cow ribs, and study scenarios were established according to the affected implant side and bone loss depth (n = 10 implants per group): Case 1 = bone loss on one side (vestibular); Case 2 = bone loss on two opposite sides (buccal and lingual); Case 3 = bone loss on two adjacent sides (buccal and mesial); and Case 4 = foursided bone loss (circumferential). For each group of 10 implants, first a bone loss of 0 mm was evaluated, then 4-mm defects (simulating 1/3 of bone loss) were created and evaluated, and finally 8-mm defects (simulating 2/3 of bone loss) were created and evaluated. Osteotomy measurements were made with a periodontal probe. For each implant, RFA was measured by the same operator using the Beacon system (Osstell).
The initial implant stability quotient (
ISQ) values of the 40 implants exceeded 70, reflecting an average of 73 in the buccolingual (VL) and 74.8 in the mesiodistal (MD) directions. ISQ measurements in the 10 implants in which bone dehiscence was performed on the vestibular aspect reflected a decrease in
ISQ values as bone loss increased. When generating bone loss in two opposite sides (buccal and lingual), a greater decrease in
ISQ values was observed when 2/3 of the implant were affected. The average VL
ISQ measurement was less than 70 when at sites with 2/3 of bone loss.
When bone loss occurs on only one side of the implant, the ISQ values decrease, but the implant maintains good stability. The same occurs when two opposite sides of the implant are affected, as the unaffected side has the least decrease in
ISQ value.