各向异性光学2D材料对于在量子材料中实现多量子功能至关重要。这使得能够制造轴向极化的电子和光电器件。在这项工作中,在相对于纳米条纹边缘的多层准1DZrS3纳米带中,可以清楚地检测到具有偏振敏感取向的多个激子发射。四个激子分别表示为AS1,AS2,AS,在10K下1.9-2.2eV的偏振微光致发光(µPL)测量中,同时检测到具有Elb偏振方向的A2和一个具有E||b偏振发射的突出A1激子。与光发射相反,进行偏振微热反射(µTR)测量以确定偏振依赖性,并从光吸收的角度验证多层ZrS3纳米带中的激子。在10K,低能量侧的突出和扩大的峰,包含通过µPL观察到的间接共振发射(DI)和通过µPL和µTR观察到的间接缺陷束缚激子峰(AInd),同时检测到,证实ZrS3中准直接带边的存在。制造了范德华堆叠的p-GaSe/n-ZrS3异质结太阳能电池,这表明,当E||b偏振光入射到设备上时,最大的轴向偏振转换效率高达0.412%。
Anisotropic optical 2D materials are crucial for achieving multiple-quanta functions within quantum materials, which enables the fabrication of axially polarized electronic and optoelectronic devices. In this work, multiple excitonic emissions owning polarization-sensitive orientations are clearly detected in a multilayered quasi-1D ZrS3 nanoribbon with respect to the nanostripe edge. Four
excitons denoted as AS1, AS2, AS, and A2 with E ⊥ b polarized direction and one prominent A1 exciton with E || b polarized emission are simultaneously detected in the polarized micro-photoluminescence (µPL) measurement of 1.9-2.2 eV at 10 K. In contrast to light emission, polarized micro-thermoreflectance (µTR) measurements are performed to identify the polarization dependence and verify the
excitons in the multilayered ZrS3 nanoribbon from the perspective of light absorption. At 10 K, a prominent and broadened peak on the lower-energy side, containing an indirect resonant emission (DI) observed by µPL and an indirect defect-bound exciton peak (AInd) observed by both µPL and µTR, is simultaneously detected, confirming the existence of a quasi-direct band edge in ZrS3. A van der Waals stacked p-GaSe/n-ZrS3 heterojunction solar cell is fabricated, which demonstrates a maximum axially-polarized conversion efficiency up to 0.412% as the E || b polarized light incident onto the device.