二维(2D)半导体场效应膜晶体管将大的载流子迁移率与机械灵活性相结合,因此可以理想地适用于可穿戴电子设备或智能传感器系统的传感器接口处。然而,这种应用需要大面积的溶液处理,而不是单片设备,其中要克服的关键挑战是高的交错电阻值。在这份报告中,使用窄通道,近垂直运输装置架构,我们已经制造了喷墨打印的亚20nm通道电解质栅极晶体管,主要具有内部色列湖载流子传输。因此,这些晶体管中的电子传输不受高交错电阻的支配,以及包括掺杂密度在内的湖内材料特性,缺陷浓度,接触电阻,可以独立地检查和优化阈值电压调制,以实现高达280μA·μm-1的电流密度。此外,通过定制的表面处理钝化硫空位,我们展示了令人印象深刻的通断电流比超过1×107,并辅以100mV·decade-1的低亚阈值摆幅。接下来,利用这些高性能晶体管,单极耗尽型负载型逆变器的最大增益为31。此外,我们已经意识到NAND,NOR,和或门,演示其无缝操作在1kHz的频率。因此,这项工作代表了实现基于印刷2D薄膜晶体管的电子电路的重要一步。
Two-dimensional (2D) semiconductor field-effect film transistors combine large carrier mobility with mechanical flexibility and therefore can be ideally suitable for wearable electronics or at the sensor interfaces of smart sensor systems. However, such applications require large-area solution processing as opposed to single-flake devices, where the critical challenge to overcome is the high interflake resistance values. In this report, using a narrow-channel, near-vertical transport device architecture, we have fabricated inkjet-printed sub-20 nm channel electrolyte-gated transistors with predominantly intraflake carrier transport. Therefore, the electronics transport in these transistors is not dominated by the high interflake resistance, and the intraflake material properties including doping density, defect concentration, contact resistance, and threshold voltage modulation can be examined and optimized independently to achieve a current density as high as 280 μA·μm-1. In addition, through the passivation of the sulfur vacancies with a tailored surface treatment, we demonstrate an impressive On-Off current ratio exceeding 1 × 107, complemented by a low subthreshold swing of 100 mV·decade-1. Next, exploiting these high-performance transistors, unipolar depletion-load-type inverters have been fabricated that show a maximum gain of 31. Furthermore, we have realized NAND, NOR, and OR gates, demonstrating their seamless operation at a frequency of 1 kHz. Therefore, this work represents an important step forward to realize electronic circuits based on printed 2D thin film transistors.