2D层状铁电材料中的光致铁电极化在具有多级电流和可重新配置功能的光电探测器中具有希望。然而,将这种潜力转化为高密度光电信息存储的实际应用仍然具有挑战性。在这项工作中,一种α-In2Se3/Te异质结设计,具有空间分辨能力,多层次,提出了非易失性光响应性。使用光电流映射,空间局部光致极化状态(LIPS)在接合区域中可视化。由照明引起的这种局部铁电极化使异质结能够表现出增强的光响应性。与以前观察到电阻多电平极化增强的报道不同,该器件在光照下表现出非挥发性光响应性增强。偏振饱和后,光电流增加到1000倍,在功率为1.69nW的520nm激光的照射下,从10-12到10-9A,与自驱动模式下的初始状态相比。光电探测器具有4.6×1010琼斯的高探测率,上升时间为27µs,下降时间为28µs。此外,该装置的局部极化特性和多级光响应使得空间复用光学信息存储成为可能。这些结果促进了对2D铁电材料中LIPS的理解,为光电信息存储技术铺平道路。
Light-induced ferroelectric polarization in 2D layered ferroelectric materials holds promise in photodetectors with multilevel current and reconfigurable capabilities. However, translating this potential into practical applications for high-density optoelectronic information storage remains challenging. In this work, an α-In2Se3/Te heterojunction design that demonstrates spatially resolved, multilevel, nonvolatile photoresponsivity is presented. Using photocurrent mapping, the spatially localized light-induced poling state (LIPS) is visualized in the junction region. This localized ferroelectric polarization induced by illumination enables the heterojunction to exhibit enhanced photoresponsivity. Unlike previous reports that observe multilevel polarization enhancement in electrical resistance, the device shows nonvolatile photoresponsivity enhancement under illumination. After polarization saturation, the photocurrent increases up to 1000 times, from 10-12 to 10-9 A under the irradiation of a 520 nm laser with a power of 1.69 nW, compared to the initial state in a self-driven mode. The photodetector exhibits high detectivity of 4.6×1010 Jones, with a rise time of 27 µs and a fall time of 28 µs. Furthermore, the device\'s localized poling characteristics and multilevel photoresponse enable spatially multiplexed optical information storage. These results advance the understanding of LIPS in 2D ferroelectric materials, paving the way for optoelectronic information storage technologies.