The ever-increasing demand for high-speed data transmission in telecommunications and data centers has driven the development of advanced on-chip integrated electro-optic modulators. Silicon modulators, constrained by the relatively weak carrier dispersion effect, face challenges in meeting the stringent requirements of next-generation photonic integrated circuits. Consequently, there has been a growing interest in Pockels effect-based electro-optic modulators, leveraging ferroelectric materials like LiNbO3, BaTiO3, PZT, and LaTiO3. Attributed to the large first-order electro-optic coefficient, researchers have delved into developing modulators with expansive bandwidth, low power consumption, compact size, and linear response. This paper reviews the working principles, fabrication techniques, integration schemes, and recent highlights in Pockels effect-based modulators.

Copolymers based on vinylidene fluoride are potential materials for ferroelectric memory elements. The trend in studies showing that a decrease in the degree of crystallinity can lead to an unexpected increase in the electric breakdown field is noted. An analysis of the literature data reveals that in fluorine-containing ferroelectric polymers, when using a bipolar triangular field, the hysteresis loop has an unclosed shape, with each subsequent loop being accompanied by a decrease in the dielectric response. In this work, the effect of the structure of self-polarized films of copolymers of vinylidene fluoride with tetrafluoroethylene and hexafluoropropylene on breakdown processes was studied. The structure of the polymer films was monitored using infrared spectroscopy (IR) and X-ray diffraction. Kelvin probe force microscopy (KPFM) was applied to characterize the local electrical properties of the polymers. For the films of the first copolymer, which crystallize in the polar β-phase, asymmetry in the dielectric response was observed at fields greater than the coercive field. For the films of the copolymers of vinylidene fluoride with hexafluoropropylene, which crystallize predominantly in the nonpolar α-phase, polarization switching processes have also been observed, but at lower electric fields. The noted phenomena will help to identify the influence of the structure of ferroelectric polymers on their electrical properties.

Lead-free K0.5Bi0.5TiO3 (KBT) ceramics with high density (~5.36 g/cm3, 90% of X-ray density) and compositional purity (up to 90%) were synthesized using a solid-state reaction method. Strongly condensed KBT ceramics revealed homogenous local microstructures. TG/DSC (Thermogravimetry-differential scanning calorimetry) techniques characterized the thermal and structural stability of KBT. High mass stability (>0.4%) has proven no KBT thermal decomposition or other phase precipitation up to 1000 °C except for the co-existing K2Ti6O13 impurity. A strong influence of crystallites size and sintering conditions on improved dielectric and non-linear optical properties was reported. A significant increase (more than twice) in dielectric permittivity (εR), substantial for potential applications, was found in the KBT-24h specimen with extensive milling time. Moreover, it was observed that the second harmonic generation (λSHG = 532 nm) was activated at remarkably low fundamental beam intensity. Finally, spectroscopic experiments (Fourier transform Raman and far-infrared spectroscopy (FT-IR)) were supported by DFT (Density functional theory) calculations with a 2 × 2 × 2 supercell (P42mc symmetry and C4v point group). Moreover, the energy band gap was calculated (Eg = 2.46 eV), and a strong hybridization of the O-2p and Ti-3d orbitals at Eg explained the nature of band-gap transition (Γ → Γ).

The silicon (Si) anode is prone to forming a high electric field gradient and concentration gradient on the electrode surface under high-rate conditions, which may destroy the surface structure and decrease cycling stability. In this study, a ferroelectric (BaTiO3) interlayer and field polarization treatment are introduced to set up a built-in field, which optimizes the transport mechanisms of Li+ in solid and liquid phases and thus enhances the rate performance and cycling stability of Si anodes. Also, a fast discharging and slow charging phenomenon is observed in a half-cell with a high reversible capacity of 1500.8 mAh g-1 when controlling the polarization direction of the interlayer, which means a fast charging and slow discharging property in a full battery and thus is valuable for potential applications in commercial batteries. Simulation results demonstrated that the built-in field plays a key role in regulating the Li+ concentration distribution in the electrolyte and the Li+ diffusion behavior inside particles, leading to more uniform Li+ diffusion from local high-concentration sites to surrounding regions. The assembled lithium-ion battery with a BaTiO3 interlayer exhibited superior electrochemical performance and long-term cycling life (915.6 mAh g-1 after 300 cycles at a high current density of 4.2 A g-1). The significance of this research lies in exploring a new approach to improve the performance of lithium-ion batteries and providing new ideas and pathways for addressing the challenges faced by Si-based anodes.

The values of the surface potentials of two sides of films of polyvinylidene fluoride, and its copolymers with tetrafluoroethylene and hexafluoropropylene, were measured by the Kelvin probe method. The microstructures of the chains in the surfaces on these sides were evaluated by ATR IR spectroscopy. It was found that the observed surface potentials differed in the studied films. Simultaneously, it was observed from the IR spectroscopy data that the microstructures of the chains on both sides of the films also differed. It is concluded that the formation of the surface potential in (self-polarized) ferroelectric polymers is controlled by the microstructure of the surface layer. The reasons for the formation of a different microstructure on both sides of the films are suggested on the basis of the general regularities of structure formation in flexible-chain crystallizing polymers.

Regular patterns of ferroelectric PbTiO3 nanostructures with lateral dimensions down to 30-60 nm have been grown onto platinized Si substrates by chemical solution deposition. The high registration of the grains is achieved by \"top-down\"-generated templates of TiO2 dots as seeds for their deposition. Ferroelectricity was verified by piezoresponse force microscopy.

Ferroelectric ceramic materials based on the (1-x-y) NaNbO3-xKNbO3-yCd0.5NbO3 system (x = 0.05-0.65, y = 0.025-0.30, Δx = 0.05) were obtained by a two-stage solid-phase synthesis followed by sintering using conventional ceramic technology. It was found that the region of pure solid solutions extends to x = 0.70 at y = 0.05 and, with increasing y, it narrows down to x ≤ 0.10 at y = 0.25. Going out beyond the specified concentrations leads to the formation of a heterogeneous region. It is shown that the grain landscape of all studied ceramics is formed during recrystallization sintering in the presence of a liquid phase, the source of which is unreacted components (Na2CO3 with Tmelt. = 1126 K, K2CO3 with Tmelt. = 1164 K, KOH with Tmelt. = 677 K) and low-melting eutectics in niobate mixtures (NaNbO3, Tmelt. = 1260 K, KNbO3, Tmelt. = 1118 K). A study of the electrophysical properties at room temperature showed the nonmonotonic behavior of all dependences with extrema near symmetry transitions, which corresponds to the logic of changes in the electrophysical parameters in systems with morphotropic phase boundaries. An analysis of the evolution of dielectric spectra made it possible to distinguish three groups of solid solutions: classical ferroelectrics (y = 0.05-0.10), ferroelectrics with a diffuse phase transition (y = 0.30), and ferroelectrics relaxors (y = 0.15-0.25). A conclusion about the expediency of using the obtained data in the development of materials and devices based on such materials has been made.

Dielectric capacitors are widely used in pulse power systems, electric vehicles, aerospace, and defense technology as they are crucial for electronic components. Compact, lightweight, and diversified designs of electronic components are prerequisites for dielectric capacitors. Additionally, wide temperature stability and high energy storage density are equally important for dielectric materials. Ferroelectric materials, as special (spontaneously polarized) dielectric materials, show great potential in the field of pulse power capacitors having high dielectric breakdown strength, high polarization, low-temperature dependence and high energy storage density. The first part of this review briefly introduces dielectric materials and their energy storage performance. The second part elaborates performance characteristics of various ferroelectric materials in energy storage and refrigeration based on electrocaloric effect and briefly shed light on advantages and disadvantages of various common ferroelectric materials. Especially, we summarize the polarization effects of underlying substrates (such as GaN and Si) on the performance characteristics of ferroelectric materials. Finally, the review will be concluded with an outlook, discussing current challenges in the field of dielectric materials and prospective opportunities to assess their future progress.

Ferroelectric materials (FEMs), possessing piezoelectric, pyroelectric, inverse piezoelectric, nonlinear optic, ferroelectric-photovoltaic, and many other properties, are attracting increasing attention in the field of biomedicine in recent years. Because of their versatile ability of interacting with force, heat, electricity, and light to generate electrical, mechanical, and optical signals, FEMs are demonstrating their unique advantages for biosensing, acoustics tweezer, bioimaging, therapeutics, tissue engineering, as well as stimulating biological functions. This review summarizes the current-available FEMs and their state-of-the-art fabrication techniques, as well as provides an overview of FEMs-based applications in the field of biomedicine. Challenges and prospects for future development of FEMs for biomedical applications are also outlined.

Organic phototransistors with high sensitivity and responsivity to light irradiance have great potential applications in national defense, meteorology, industrial manufacturing, and medical security. However, undesired dark current and photoresponsivity limit their practical applications. Here, a novel vertical organic phototransistor combined with ferroelectric materials is developed. The device structure has nanometer channel length, which can effectively separate photogenerated carriers and reduce the probability of carrier recombination and defect scattering, thus improving the device performance of phototransistors. Moreover, by inserting the poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) ferroelectric layer, the Schottky barrier at the interface between the semiconductor and source can be adjusted by the polarization of the external electric field, which can effectively reduce the dark current of the phototransistor to further improve the device performance. Therefore, our phototransistors exhibit a high photoresponsivity of more than 5.7 × 105A/W, an outstanding detectivity of 1.15 × 1018 Jones, and an excellent photosensitivity of 5 × 107 under 760 nm light illumination, which are better than those of conventional lateral organic phototransistors. This work provides a new approach for the development of high-performance phototransistors, which opens a new pathway for organic phototransistors in practical application.