A ferroelectret nanogenerator (FENG) was recently developed as a flexible energy harvesting device with bi-directional capability between electrical and mechanical energy domains, and its use as a loudspeaker/microphone was demonstrated. Dependencies of Sound Pressure Levels (SPLs) generated by FENG due to an AC voltage stimulus, surface area, geometric shape, and addition of layers are presented here. Also, the relation between the sound output to the electrical input is studied and shown to be linear, which demonstrates that these flexible loudspeakers have low distortion within the human audible range of 20 Hz to 20 kHz. A study for ultrasonic frequencies up to 40 kHz is also presented. A theoretical model relating the electrical and acoustical domain of the FENG is developed based on the experimental observations made and using Boundary Element Methods (BEM) to accurately mimic the testing environment for simulation purposes. The comparison between this model and the actual behavior is presented under several cases and observed to be closely correlated.

In recent years, after the ongoing success in the creation of portable electronic devices, an increasing effort has been put in creating wearable devices capable of sensing multiple parameters while being imperceptible to the user. A field that has recently gained attention due to this is that of textile electronics. For this purpose, one of the most commonly used materials is conductive threads, capable of sustaining an electrical connection, while at the same time being part of a garment. As research on the performance and stability of such threads is scarce, the aim of this work is to study the effects of tension on readily available conductive threads and to verify their suitability and reliability for e-textile applications. After testing seven commercially available threads, this study demonstrates that the nominal parameters provided by the manufacturers are not in line with experimentation, and that both embroidery and washing have an impact on their performance.

Evaluate per-patient diagnostic performance of a wireless dual-sensor system (ANNE sleep) compared with reference standard polysomnography (PSG) for the diagnosis of moderate and severe obstructive sleep apnea (OSA) with a minimum prespecified threshold of 80% for both sensitivity and specificity.
A multicenter clinical trial was conducted to evaluate ANNE sleep vs PSG to diagnose moderate and severe OSA in individuals 22 years or older. For each testing approach, apnea-hypopnea index (AHI) was manually scored and averaged by 3 registered sleep technologists blinded to the other system. Average variations > 15% were adjudicated by a sleep medicine physician.
In a total of n = 225 participants (mean age 53 years, range 22-88 years), PSG diagnosed 30% (n = 68) of participants with moderate or severe OSA (AHI ≥ 15 events/h) compared to 29% (n = 65) diagnosed by ANNE sleep (P = .55). The sensitivity and specificity for ANNE sleep were 90% (95% confidence interval: 80-96%) and 98% (95% confidence interval: 94-99%), respectively. Strong correlation was shown in terms of final AHI (r = .93), with an average AHI bias of 0.5 (95% limits of agreement: -12.8 to 11.8). The majority of users noted comfort with using the ANNE sleep in the home setting. No adverse events were noted.
Using PSG as the gold standard, ANNE sleep demonstrated high sensitivity and specificity for the diagnosis of moderate or severe OSA.
Registry: ClinicalTrials.gov; Name: Comparative Study of the ANNE™ One System to Diagnose Obstructive Sleep Apnea; URL: https://clinicaltrials.gov/ct2/show/NCT04643782; Identifier: NCT04643782.
Davies C, Lee JY, Walter J et al. A single-arm, open-label, multicenter, and comparative study of the ANNE sleep system vs polysomnography to diagnose obstructive sleep apnea. J Clin Sleep Med. 2022;18(12):2703-2712.

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

The unique properties of hybrid organic-inorganic perovskites (HOIPs) promise to open doors to next-generation flexible optoelectronic devices. Before such advances are realized, a fundamental understanding of the mechanical properties of HOIPs is required. Here, we combine ab initio density functional theory (DFT) modeling with a diverse set of experiments to study the elastic properties of (quasi)2D HOIPs. Specifically, we focus on (quasi)2D single crystals of phenethylammonium methylammonium lead iodide, (PEA)2PbI4(MAPbI3)n-1, and their 3D counterpart, MAPbI3. We used nanoindentation (both Hertzian and Oliver-Pharr analyses) in combination with elastic buckling instability experiments to establish the out-of-plane and in-plane elastic moduli. The effect of Van der Waals (vdW) forces, different interlayer interactions, and finite temperature are combined with DFT calculations to accurately model the system. Our results reveal a nonmonotonic dependence of both the in-plane and out-of plane elastic moduli on the number of inorganic layers (n) rationalized by first-principles calculations. We discuss how the presence of defects in as-grown crystals and macroscopic interlayer deformations affect the mechanical response of (quasi)2D HOIPs. Comparing the in- and out-of-plane experimental results with the theory reveals that perturbations to the covalent and ionic bonds (which hold a 2D layer together) is responsible for the relative out-of-plane stiffness of these materials. In contrast, we conjecture that the in-plane softness originates from macroscopic or mesoscopic motions between 2D layers during buckling experiments. Additionally, we learn how dispersion and π interactions in organic bilayers can have a determining role in the elastic response of the materials, especially in the out-of-plane direction. The understanding gained by comparing ab initio and experimental techniques paves the way for rational design of layered HOIPs with mechanical properties favorable for strain-intensive applications. Combined with filters for other favorable criteria, e.g., thermal or moisture stability, one can systematically screen viable (quasi)2D HOIPs for a variety of flexible optoelectronic applications.

Utilizing the intrinsic mobility-strain relationship in semiconductors is critical for enabling strain engineering applications in high-performance flexible electronics. Here, measurements of Hall effect and Raman spectra of an organic semiconductor as a function of uniaxial mechanical strain are reported. This study reveals a very strong, anisotropic, and reversible modulation of the intrinsic (trap-free) charge carrier mobility of single-crystal rubrene transistors with strain, showing that the effective mobility of organic circuits can be enhanced by up to 100% with only 1% of compressive strain. Consistently, Raman spectroscopy reveals a systematic shift of the low-frequency Raman modes of rubrene to higher (lower) frequencies with compressive (tensile) strain, which is indicative of a reduction (enhancement) of thermal molecular disorder in the crystal with strain. This study lays the foundation of the strain engineering in organic electronics and advances the knowledge of the relationship between the carrier mobility, low-frequency vibrational modes, strain, and molecular disorder in organic semiconductors.

Nonvacuum printing of single crystals would be ideal for high-performance functional device (such as electronics) fabrication yet challenging for most materials, especially for inorganic semiconductors. Currently, the printed films are dominant in amorphous, polycrystalline, or nanoparticle films. In this article, manufacturing of single-crystal silicon micro/nano-islands is attempted. Different from traditional vapor deposition for silicon thin-film preparation, silicon nanoparticle ink was aerosol-printed followed by confined laser melting and crystallization, allowing potential fabrication of single-crystal silicon micro/nano-islands. It is also shown that as-fabricated Si islands can be transfer-printed onto polymer substrates for potential application of flexible electronics. The additive nature of this technique suggests a scalable and economical approach for high-crystallinity semiconductor printing.

We investigated the electrical and mechanical stability of flexible 6,13-bis(triisopropylsilylehtynyl)pentacene (TIPS-pentacene) thin-film transistors (TFTs) that were fabricated on polyimide (PI) substrates using cross-linked poly(4-vinylphenol) (c-PVP) and c-PVP/yttrium oxide (Y₂O₃) nanocomposite films as gate insulators. Compared with the electrical characteristics of TIPS-pentacene TFTs with c-PVP insulators, the TFTs with c-PVP/Y₂O₃ nanocomposite insulators exhibited enhancements in the drain current and the threshold voltage due to an increase in the dielectric capacitance. In electrical stability experiments, a gradual decrease in the drain current and a negative shift in the threshold voltage occurred during prolonged bias stress tests, but these characteristic variations were comparable for both types of TFT. On the other hand, the results of mechanical bending tests showed that the characteristic degradation of the TIPS-pentacene TFTs with c-PVP/Y₂O₃ nanocomposite insulators was more critical than that of the TFTs with c-PVP insulators. In this study, the detrimental effect of the nanocomposite insulator on the mechanical stability of flexible TIPS-pentacene TFTs was found to be caused by physical adhesion of TIPS-pentacene molecules onto the rough surfaces of the c-PVP/Y₂O₃ nanocomposite insulator. These results indicate that the dielectric and morphological properties of polymeric nanocomposite insulators are significant when considering practical applications of flexible electronics operated at low voltages.

This study refers to the doping of organic semiconductors by a simple reaction between copper phthalocyanine and tetrathiafulvalene or tetracyanoquinodimethane. The semiconductor films of copper phthalocyanine, doped with tetrathiafulvalene donor (CuPc-TTF) and tetracyanoquinodimethane acceptor (CuPc-TCNQ) on different substrates, were prepared by vacuum evaporation. The structure and morphology of the semiconductor films were studied with infrared (IR) spectroscopy, X-ray diffraction (XRD), and scanning electron microscopy (SEM). The absorption spectra for CuPc-TTF, recorded in the 200⁻900 nm UV⁻vis region for the deposited films, showed two peaks: a high energy peak, around 613 nm, and a second one, around 695 nm, with both peaks corresponding to the Q-band transition of the CuPcs. From the spectra, it can also be seen that CuPc-TTF has a B-band at around 330 nm and has a bandgap of approximately 1.4 eV. The B-band in the CuPc-TCNQ spectrum is quite similar to that of CuPc-TTF; on the other hand, CuPc-TCNQ does not include a Q-band in its spectrum and its bandgap value is of approximately 1.6 eV. The experimental optical bandgaps were compared to the ones calculated through density functional theory (DFT). In order to prove the effect of dopants in the phthalocyanine semiconductor, simple devices were manufactured and their electric behaviors were evaluated. Devices constituted by the donor-acceptor active layer and by the hollow, electronic-transport selective layers, were deposited on rigid and flexible indium tin oxide (ITO) substrates by the vacuum sublimation method. The current⁻voltage characteristics of the investigated structures, measured in darkness and under illumination, show current density values of around 10 A/cm² for the structure based on a mixed-PET layer and values of 3 A/cm² for the stacked-glass layered structure. The electrical properties of the devices, such as carrier mobility (μ) were obtained from the J⁻V characteristics. The mobility values of the devices on glass were between 1.59 × 10⁸ and 3.94 × 1010 cm²/(V·s), whereas the values of the devices on PET were between 1.84 × 10⁸ and 4.51 × 10⁸ cm²/(V·s). The different behaviors of the rigid and flexible devices is mainly due to the effect of the substrate.

This work presents a detailed study of the photothermal ablation of Kapton® polyimide by a laser diode targeting its electrical conductivity enhancement. Laser-treated samples were structurally characterized using Scanning Electron Microscopy (SEM), Raman spectroscopy, X-ray Photoelectron Spectroscopy (XPS), as well as Diffuse Reflectance Infrared Fourier Transform (DRIFT) spectroscopy. The results show that the laser-assisted ablation constitutes a simple one-step and environmental friendly method to induce graphene-derived structures on the surface of polyimide films. The laser-modified surface was also electrically characterized through the Transmission Line Method (TLM) aiming at the improvement of the conductivity of the samples by tuning the laser power and the extraction of the contact resistance of the electrodes. Once the laser-ablation process is optimized, the samples increase their conductivity up to six orders of magnitude, being comparable to that of graphene obtained by chemical vapor deposition or by the reduction of graphene-oxide. Additionally, we show that the contact resistance can be decreased down to promising values of ∼2 Ω when using silver-based electrodes.