OBJECTIVE: The paper aims to investigative the cacuses and impacts of In- and Vacancy-doped to 6H-SiC, expecting that improving optical properties of materials. Design-Using the first-principles calculations, we discuss the electronic structure and optical properties of different doped 6H-SiC systems.
RESULTS: The results show that In-doped 6H-SiC becomes a direct bandgap p-type semiconductor and the energy bandgap is reduced from the intrinsic 2.059 to 1.515 eV. We demonstrate the stability of the systems through the formation energy analysis, meanwhile identify their physical origins and discuss applications of all structures in electronic devices within optical analysis. Find the energy beginning values of the VSi-doped and VC-doped systems\' optical absorption spectrums and extend to 0.4 2 eV and 0.11 eV respectively compared with the original 3.23 eV. In the visible light region, the reflectivity images of the VC/VSi and (In, VSi)-codoped systems rise obviously.
CONCLUSIONS: The optical properties of all doping systems were analyzed to be improved compared with the intrinsic, all above mentioned provide a theoretical basis for the fabrication of spintronic and optical devices.

The structural, electronic, and optical properties of hydrogenated silicene have been investigated using first-principles DFT calculations. Compared to pristine silicene, hydrogenated silicene exhibits high stability, reduced anisotropy, and less birefringence. Hydrogenated silicene shows a constant refractive index in the visible region, increasing exponentially in silicene. The elastic and optical parameters such as Young\'s modulus (Y), Poisson\'s ratio (ν), bulk modulus (B), shear modulus (G), dielectric constant ε(0), refractive index n(0), conductivity threshold (Eth), birefringence Δn(0), and plasmon energy (ħωp) were calculated for the first time for different hydrogen coverage on silicene, which is crucial in the applications of linear and non-linear optoelectronic devices. The estimated parameters agree well with the available experimental and reported values.

The features of the electrode surface film during Li-metal deposition and dissolution cycles are essential for understanding the mechanism of the negative electrode reaction in Li-metal battery cells. The physical and chemical property changes of the interface during the initial stages of the reaction should be investigated under operando conditions. In this study, we focused on the changes in the optical properties of the electrode surface film of the negative electrode of a Li-metal battery. Cu-based electrochemical surface plasmon resonance spectroscopy (EC-SPR) was applied because of its high sensitivity to optical phenomena on the electrode surface and its stability against Li-metal deposition. The feature of SPR reflectance dip depends on the optical properties of the electrode surface; namely, the wavelength and depth of the reflectance dip directly connected the refractive index and extinction coefficient (color of electrode surface film), which was confirmed by reflectance simulation. In the operando EC-SPR experiment, various changes in optical properties were clearly observed during the cycles. In particular, the change in the extinction coefficient was more remarkable at the second process than the first process of Li-metal deposition. By electrochemical quartz-crystal microbalance (EQCM) measurements, surface film formation was confirmed during the first Li-metal deposition process. The remarkable change in the extinction coefficient is based on the color change of the surface film, which is caused by the chemical condition change during Li-metal deposition cycles.

In this study, the electronic and optical properties of one-dimensional (1D) single-walled carbon nanotube (SWCNT) nanostructures, and under the external electric field [Formula: see text] applied in the z-direction, are investigated using density functional theory (DFT) calculations. The applied [Formula: see text] leads to significant modulation of the bandgap and changes the total density of states (TDOS), partial density of states (PDOS), absorption coefficient, dielectric function, optical conductivity, refractive index, and the loss function. The application of the [Formula: see text] on the SWCNT/Carboxyl structure leads to tighten its bandgap. The peaks of TDOS around the Fermi level are very weak. The absorption coefficient increases in visible range and decreases in ultraviolet (UV) domain proportionally with the [Formula: see text]. It is found that electronic structures and optical properties of the SWCNT/Carboxyl could be affected by the [Formula: see text]. All these results provide the important information for understanding and controlling the electronic and optical properties of 1D crystals by the [Formula: see text]. This study establishes a theoretical foundation for our future experimental work regarding optoelectronic properties of the SWCNT/Carboxyl material.

Based on the first-principles calculations, the electronic structure and optical properties of the Mo-doped monolayer rhenium disulfide (ReS2) model are calculated, and the system stability, bond length, charge difference density, band structure, photoabsorption coefficient, system stability, and reflectivity are analyzed. The calculation results show that doping changes the structural stability of the system, which gradually decreases with an increasing concentration of doping. The calculation of band structure and density of states indicated that the band gap value of the system decreases continuously to 0 with increasing doping concentration, while the average charge population of atoms at doping sites keeps increasing with the better electron-losing ability of atoms. Compared with the intrinsic monolayer ReS2, the peak of systemic reflectivity at different doping concentrations has corresponding degrees of redshift in a certain wavelength range, as demonstrated by the optical properties.

To gain fundamental understanding of the high-temperature optical gas-sensing and light-energy conversion materials, we comparatively investigate the temperature effects on the band gap and optical properties of rutile and anatase TiO2experimentally and theoretically. Given that the electronic structures of rutile and anatase are fundamentally different, i.e. direct band gap in rutile and indirect gap in anatase, it is not clear whether these materials exhibit different electronic structure renormalizations with temperature. Usingab initiomethods, we show that the electron-phonon interaction is the dominant factor for temperature band gap renormalization compared to the thermal expansion. As a result of different contributions from the acoustic and optical phonons, the band gap is found to widen with temperature up to 300 K, and to narrow at higher temperatures. Our calculations suggest that the band gap is narrowed by about 147 meV and 128 meV at 1000 K for rutile and anatase, respectively. Experimentally, for rutile and anatase TiO2thin films we conducted UV-Vis transmission measurements at different temperatures, and analyzed band gaps from the Tauc plots. For both TiO2phases, the band gap is found to decrease for temperature above 300 K quantitatively, agreeing with our theoretical results. The temperature effects on the dielectric functions, the refractive index, the extinction coefficient as well as the optical conductivity are also investigated. Rutile and anatase show generally similar optical properties, but differences exist in the long wavelength regime above 600 nm, where we found that the dielectric function of rutile decreases while that of anatase increases with temperature increase.

Sulfur vacancy in MoS2has been found to have an important influence on the performance of optoelectronic devices. Here, we study the effect of sulfur vacancy and O2adsorption on the electronic and optical properties in the two-dimensional ferroelectric CuInP2S6. It is revealed that a defect state appears at the top of valence band with the presence of sulfur vacancy. However, when O2is chemisorbed at sulfur vacancy, the defect state disappears. The variation of charge state and charge transfer are calculated and discussed. Although the ferroelectricity is greatly suppressed with the presence of sulfur vacancy, the ferroelectric state can be recovered when the O2is adsorbed. Within the framework of GW + BSE method, the optical absorption edge of CuInP2S6monolayer exhibits a red-shift for the presence of sulfur vacancy and further O2adsorption gives rise to a blue-shift of the spectrum. Our findings have shown an effective way to improve the functionality of two-dimensional ferroelectrics via defect engineering.

We systematically study, by using first-principles calculations, stabilities, electronic properties, and optical properties of GexSn1-xSe alloy made of SnSe and GeSe monolayers with different Ge concentrations x = 0.0, 0.25, 0.5, 0.75, and 1.0. Our results show that the critical solubility temperature of the alloy is around 580 K. With the increase of Ge concentration, band gap of the alloy increases nonlinearly and ranges from 0.92 to 1.13 eV at the PBE level and 1.39 to 1.59 eV at the HSE06 level. When the Ge concentration x is more than 0.5, the alloy changes into a direct bandgap semiconductor; the band gap ranges from 1.06 to 1.13 eV at the PBE level and 1.50 to 1.59 eV at the HSE06 level, which falls within the range of the optimum band gap for solar cells. Further optical calculations verify that, through alloying, the optical properties can be improved by subtle controlling the compositions. Since GexSn1-xSe alloys with different compositions have been successfully fabricated in experiments, we hope these insights will contribute to the future application in optoelectronics.

Novel 7,7\'-((anthracene-9,10-diylbis(methylene))bis(oxy))bis(4-methyl-2H-chromen-2-one) (BisCA) was prepared as fluorescent probe. The chemical structure of the novel BisCA was confirmed by spectroscopic data as well as elemental analyses. The solvatochromic characteristics of the new proble and its precursors were investigated in different solvents including, ethanol, DMF and toluene as protic polar, aprotic polar and non-polar solvents, respectively. Photo-physical parameters of probes, such as fluorescence quantum yields, fluorescence lifetime of excited state, radiative and non-radiative decay, were assessed in different media. The intermolecular H-bond effect on absorption and excitation spectra of the novel probe was reported in different solvents. Also, Onsager cavity radius and dipole moment of ground state and excited state of the probe were calculated as described by Bakhshiev and Reichardt methods.

Al-doped ZnO has attracted much attention as a transparent electrode. The graphene-like ZnO monolayer as a two-dimensional nanostructure material shows exceptional properties compared to bulk ZnO. Here, through first-principle calculations, we found that the transparency in the visible light region of Al-doped ZnO monolayer is significantly enhanced compared to the bulk counterpart. In particular, the 12.5 at% Al-doped ZnO monolayer exhibits the highest visible transmittance of above 99%. Further, the electrical conductivity of the ZnO monolayer is enhanced as a result of Al doping, which also occurred in the bulk system. Our results suggest that Al-doped ZnO monolayer is a promising transparent conducting electrode for nanoscale optoelectronic device applications.