Abstract：
Solution-based processes have received considerable attention in the fabrication of electronics and sensors owing to their merits of being low-cost, vacuum-free, and simple in equipment. However, the current solution-based processes either lack patterning capability or have low resolution (tens of micrometers) and low pattern fidelity in terms of line edge roughness (LER, several micrometers). Here, we present a surface energy-directed assembly (SEDA) process to fabricate metal oxide patterns with up to 2 orders of magnitude improvement in resolution (800 nm) and LER (16 nm). Experiment results show that high pattern fidelity can be achieved only at low relative humidities of below 30%. The reason for this phenomenon lies in negligible water condensation on the solution droplet. Employing the SEDA process, all-solution-processed metal oxide thin film transistors (TFTs) are fabricated by using indium oxide as channel layers, indium tin oxide as source/drain electrodes and gate electrodes, and aluminum oxide as gate dielectrics. TFT-based logic gate circuits, including NOT, NOR, NAND, and AND are fabricated as well, demonstrating the applicability of the SEDA process in fabricating large area functional electronics.
摘要：
基于溶液的工艺由于其低成本的优点而在电子器件和传感器的制造中受到了相当大的关注,无真空,设备简单。然而,当前基于解决方案的工艺要么缺乏图案化能力，要么在线边缘粗糙度方面具有低分辨率(几十微米)和低图案保真度(LER,几微米)。这里,我们提出了一种表面能定向组装（SEDA）工艺，以制造分辨率（800nm）和LER（16nm）提高高达2个数量级的金属氧化物图案。实验结果表明，只有在相对湿度低于30％的情况下，才能实现高图案保真度。这种现象的原因在于溶液液滴上可忽略的水冷凝。采用SEDA流程，采用氧化铟作为沟道层制作了全溶液处理的金属氧化物薄膜晶体管(TFT),铟锡氧化物作为源/漏电极和栅电极，和氧化铝作为栅极电介质。基于TFT的逻辑门电路，包括NOT,NOR,NAND,并且也是制造的，证明SEDA工艺在制造大面积功能电子产品中的适用性。
