PDF(Pubmed)
Abstract：
In this study, a p-Si/ALD-Al2O3/Ti/Pt MOS (metal oxide semiconductor) device has been fabricated and used as a hydrogen sensor. The use of such a stack enables a reliable, industry-compatible CMOS fabrication process. ALD-Al2O3 has been chosen as it can be integrated into the back end of the line (BEOL) or in CMOS, post processing. The device response and recovery are demonstrated with good correlation between the capacitance variation and the hydrogen concentration. Detection down to 20 ppm at 140 °C was obtained and a response time of 56 s for 500 ppm was recorded.
摘要：
在这项研究中,已经制造了p-Si/ALD-Al2O3/Ti/PtMOS(金属氧化物半导体)器件并将其用作氢传感器。使用这样的堆栈能够实现可靠的，行业兼容的CMOS制造工艺。ALD-Al2O3已被选择，因为它可以集成到生产线的后端（BEOL）或CMOS，后期处理。证明了器件响应和恢复在电容变化和氢浓度之间具有良好的相关性。在140°C下获得低至20ppm的检测,并且记录对于500ppm的56秒的响应时间。
