Abstract：
The subnanometer distance between tip and sample in a scanning tunneling microscope (STM) enables the application of very large electric fields with a strength as high as ∼1 GV/m. This has allowed for efficient electrical driving of Rabi oscillations of a single spin on a surface at a moderate radiofrequency (RF) voltage on the order of tens of millivolts. Here, we demonstrate the creation of dressed states of a single electron spin localized in the STM tunnel junction by using resonant RF driving voltages. The read-out of these dressed states was achieved all electrically by a weakly coupled probe spin. Our work highlights the strength of the atomic-scale geometry inherent to the STM that facilitates the creation and control of dressed states, which are promising for the design of atomic scale quantum devices using individual spins on surfaces.
摘要：
扫描隧道显微镜（STM）中尖端和样品之间的亚纳米距离使得可以应用强度高达1GV/m的非常大的电场。这允许在几十毫伏量级的中等射频(RF)电压下有效电驱动表面上的单个自旋的拉比振荡。这里,我们演示了通过使用谐振RF驱动电压来创建位于STM隧道结中的单个电子自旋的修整状态。这些修整状态的读出都是通过弱耦合探针自旋电实现的。我们的工作强调了STM固有的原子级几何结构的强度，它有助于创建和控制穿着状态，这对于使用表面上的单个自旋来设计原子级量子设备很有希望。
