Abstract：
Sculpting silicon at the micro and nano scales has been game-changing to mold bulk silicon properties and expand, in turn, applications of silicon beyond electronics, namely, in photonics, sensing, medicine, and mechanics, to cite a few. Voltage- and metal-assisted chemical etching (ECE and MaCE, respectively) of silicon in acidic electrolytes have emerged over other micro and nanostructuring technologies thanks to their unique etching features. ECE and MaCE have enabled the fabrication of novel structures and devices not achievable otherwise, complementing those feasible with the deep reactive ion etching (DRIE) technology, the gold standard in silicon machining. Here, a comprehensive review of ECE and MaCE for silicon micro and nano machining is provided. The chemistry and physics ruling the dissolution of silicon are dissected and similarities and differences between ECE and MaCE are discussed showing that they are the two sides of the same coin. The processes governing the anisotropic etching of designed silicon micro and nanostructures are analyzed, and the modulation of etching profile over depth is discussed. The preparation of micro- and nanostructures with tailored optical, mechanical, and thermo(electrical) properties is then addressed, and their applications in photonics, (bio)sensing, (nano)medicine, and micromechanical systems are surveyed. Eventually, ECE and MaCE are benchmarked against DRIE, and future perspectives are highlighted.
摘要：
在微米和纳米尺度上雕刻硅一直在改变游戏规则，以塑造块状硅的特性并扩展，反过来,硅的应用超越电子，即,在光子学中，传感,医学,和机械师,举几个。电压和金属辅助化学蚀刻(ECE和MaCE，由于其独特的蚀刻特征，酸性电解质中的硅已经超过其他微米和纳米结构技术。ECE和MaCE实现了无法实现的新型结构和器件的制造，用深度反应离子蚀刻(DRIE)技术补充那些可行的技术，在硅加工的黄金标准。这里,提供了对硅微纳米加工的ECE和MaCE的全面审查。剖析了决定硅溶解的化学和物理学，并讨论了ECE和MaCE之间的异同，表明它们是同一枚硬币的两面。分析了控制设计的硅微米和纳米结构的各向异性蚀刻的过程，并讨论了蚀刻轮廓对深度的调制。用定制的光学制备微米和纳米结构，机械,然后解决了热（电）特性，以及它们在光子学中的应用，（生物）传感，（纳米）医学，和微机械系统进行了调查。最终,ECE和MaCE以DRIE为基准，并强调了未来的前景。
