关键词: ASIC SoC UWB amplifier differential radar ultra-wideband

来  源:   DOI:10.3390/s24072143   PDF(Pubmed)

Abstract:
Amplification of wideband high-frequency and microwave signals is a fundamental element within every high-frequency circuit and device. Ultra-wideband (UWB) sensor applications use circuits designed for their specific application. The article presents the analysis, design, and implementation of ultra-wideband differential amplifiers for M-sequence-based UWB applications. The designed differential amplifiers are based on the Cherry-Hooper structure and are implemented in a low-cost 0.35 µm SiGe BiCMOS semiconductor process. The article presents an analysis and realization of several designs focused on different modifications of the Cherry-Hooper amplifier structure. The proposed amplifier modifications are focused on achieving the best result in one main parameter\'s performance. Amplifier designs modified by capacitive peaking to achieve the largest bandwidth, amplifiers with the lowest possible noise figure, and designs focused on achieving the highest common mode rejection ratio (CMRR) are described. The layout of the differential amplifiers was created and the chip was manufactured and wire-bonded to the QFN package. For evaluation purposes, a high-frequency PCB board was designed. Schematic simulations, post-layout simulations, and measurements of the individual parameters of the designed amplifiers were performed. The designed and fabricated ultra-wideband differential amplifiers have the following parameters: a supply current of 100-160 mA at -3.3 V or 3.3 V, bandwidth from 6 to 12 GHz, gain (at 1 GHz) from 12 to 16 dB, noise figure from 7 to 13 dB, and a common mode rejection ratio of up to 70 dB.
摘要:
宽带高频和微波信号的放大是每个高频电路和设备中的基本要素。超宽带(UWB)传感器应用使用为其特定应用而设计的电路。本文提出了分析,设计,并实现了基于M序列的UWB应用的超宽带差分放大器。设计的差分放大器基于Cherry-Hooper结构,并以低成本0.35µmSiGeBiCMOS半导体工艺实现。本文介绍了几种设计的分析和实现,重点是对Cherry-Hooper放大器结构的不同修改。所提出的放大器修改集中于在一个主要参数的性能中实现最佳结果。通过电容峰值修改放大器设计以实现最大带宽,具有尽可能低的噪声系数的放大器,描述了专注于实现最高共模抑制比(CMRR)的设计。创建了差分放大器的布局,并制造了芯片并将其引线接合到QFN封装。出于评估目的,设计了一款高频PCB板。原理图模拟,布局后模拟,并对所设计放大器的各个参数进行了测量。设计和制造的超宽带差分放大器具有以下参数:在-3.3V或3.3V时为100-160mA的电源电流,带宽从6到12GHz,增益(在1GHz)从12到16dB,从7到13dB的噪声系数,和高达70dB的共模抑制比。
公众号