Abstract：
Despite the considerable potential of AlGaN-based ultraviolet-B light-emitting diodes (UV-B LEDs) in various applications such as phototherapy, UV curing, plant growth, and analytical technology, their development is still ongoing due to low luminescence efficiency. In this study, we introduced a novel epitaxial growth mechanism to effectively control the height and thickness of AlGaN multiple wells (MWs) on AlGaN nanorod structures using horizontal reactor-based metal-organic chemical vapor deposition (MOCVD). By adjusting the H2 carrier gas flow rate, we could control the growth boundary layer\'s thickness, successfully separating the AlGaN well and p-AlGaN layer from the substrate. Cathodoluminescence (CL) measurements confirmed the stability of the core-shell AlGaN quantum wells as a highly stable nonpolarized structure, with the wavelength peak remaining almost unchanged under various injection currents. Furthermore, transmission electron microscopy (TEM) provided clear evidence of differentiation, highlighting the distinct formation of the 275 nm AlGaN core and the 295 nm AlGaN shell structure. The developed AlGaN MW structure, characterized by these rectification features, not only demonstrated a significantly improved electroluminescence (EL) peak intensity but also exhibited a much lower leakage current compared to the conventional core-shell AlGaN structure. The newly proposed growth mechanism and advanced nonpolarized core-shell AlGaN structure are expected to serve as excellent alternatives for substantially enhancing the efficiency of the next generation of high-efficiency UV LEDs.
摘要：
尽管AlGaN基紫外-B发光二极管（UV-BLED）在光疗等各种应用中具有相当大的潜力，UV固化,植物生长,和分析技术，由于发光效率低，它们的发展仍在进行中。在这项研究中,我们引入了一种新颖的外延生长机制，以有效地控制AlGaN多阱（MWs）上AlGaN纳米棒结构的高度和厚度使用水平反应器基金属有机化学气相沉积（MOCVD）。通过调节H2载气流量，我们可以控制生长边界层的厚度，成功地将AlGaN阱和p-AlGaN层与衬底分离。阴极发光（CL）测量证实了核-壳AlGaN量子阱作为高度稳定的非极化结构的稳定性，在各种注入电流下，波长峰值几乎保持不变。此外，透射电子显微镜（TEM）提供了明确的分化证据，突出了275nmAlGaN核和295nmAlGaN壳结构的不同形成。开发的AlGaNMW结构，以这些矫正特征为特征，与传统的核-壳AlGaN结构相比，不仅显示出显着改善的电致发光（EL）峰强度，而且还显示出低得多的泄漏电流。新提出的生长机制和先进的非极化核-壳AlGaN结构有望成为显著提高下一代高效UVLED效率的优秀替代品。
