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Abstract：
The synthesis of β-Ga2O3 ceramic was achieved using high-energy electron beams for the first time. The irradiation of gallium oxide powder in a copper crucible using a 1.4 MeV electron beam resulted in a monolithic ceramic structure, eliminating powder particles and imperfections. The synthesized β-Ga2O3 ceramic exhibited a close-to-ideal composition of O/Ga in a 3:2 ratio. X-ray diffraction analysis confirmed a monoclinic structure (space group C2/m) that matched the reference diagram before and after annealing. Photoluminescence spectra revealed multiple luminescence peaks at blue (~2.7 eV) and UV (3.3, 3.4, 3.8 eV) wavelengths for the synthesized ceramic and commercial crystals. Raman spectroscopy confirmed the bonding modes in the synthesized ceramic. The electron beam-assisted method offers a rapid and cost-effective approach for β-Ga2O3 ceramic production without requiring additional equipment or complex manipulations. This method holds promise for fabricating refractory ceramics with high melting points, both doped and undoped.
摘要：
首次利用高能电子束合成β-Ga2O3陶瓷。使用1.4MeV电子束在铜坩埚中辐照氧化镓粉末，得到整体陶瓷结构，消除粉末颗粒和瑕疵。合成的β-Ga2O3陶瓷以3：2的比例表现出接近理想的O/Ga组成。X射线衍射分析证实了单斜结构(空间群C2/m)在退火之前和之后与参考图匹配。光致发光光谱显示合成的陶瓷和商业晶体在蓝色(〜2.7eV)和UV(3.3,3.4,3.8eV)波长处的多个发光峰。拉曼光谱证实了合成陶瓷中的键合模式。电子束辅助方法为β-Ga2O3陶瓷生产提供了一种快速且具有成本效益的方法，而无需额外的设备或复杂的操作。该方法有望用于制造高熔点的耐火陶瓷，掺杂和未掺杂。
