Abstract：
Fluorescence quenching due to energy transfer from InP/ZnS quantum dots (QDs) to Ti3C2Tx MXene materials was investigated by the transient absorption spectroscopy. During the fluorescence quenching, the photo-induced absorption feature in the transient spectrum was blue-shifted due to the higher photon energy required for the upward transition. The lifetime of stimulated emission was gradually extended from 0.86 μs to 2.28 μs with increasing Ti3C2Tx MXene. The fluorescence quenching of QDs can be quantitatively characterized by analyzing the lifetime of the stimulated emission feature in the transient absorption spectrum, which was used as a Ti3C2Tx MXene detection with the sensitivity of 6.63 mL/mg. The results of this study provide the basis for the design of optical sensors.
摘要：
通过瞬态吸收光谱研究了从InP/ZnS量子点（QD）到Ti3C2TxMXene材料的能量转移引起的荧光猝灭。在荧光猝灭过程中,由于向上跃迁所需的光子能量较高，因此瞬态光谱中的光诱导吸收特征发生了蓝移。随着Ti3C2TxMXene的增加，受激发射的寿命从0.86μs逐渐延长到2.28μs。通过分析瞬态吸收光谱中受激发射特性的寿命,可以定量表征量子点的荧光猝灭,用于Ti3C2TxMXene检测，灵敏度为6.63mL/mg。研究结果为光学传感器的设计提供了依据。
