Abstract：
This paper presents the results of beam investigations on semiconductor IR lasers using novel detectors based on thermocouples. The work covers the design, the fabrication of detectors, and the experimental validation of their sensitivity to IR radiation. The principle of operation of the manufactured detectors is based on the Seebeck effect (the temperature difference between hot and cold junctions induced voltage appearance). The devices were composed of several thermocouples arranged in a linear array. The nano- and microscale thermocouples (the hot junctions) were fabricated using a typical Si-compatible MEMS process enhanced with focused ion beam (FIB) milling. The performance of the hot junctions was tested, focusing on their sensitivity to IR radiation covering the near-infrared (NIR) radiation (λ = 976 nm). The output voltage was measured as a function of the detector position in the XY plane. The measurement results allowed for reconstructing the Gaussian-like intensity distribution of the incident light beam.
摘要：
本文介绍了使用基于热电偶的新型探测器对半导体红外激光器进行光束研究的结果。作品涵盖了设计，探测器的制造，并通过实验验证了它们对红外辐射的敏感性。所制造的检测器的操作原理基于塞贝克效应(热接点和冷接点之间的温度差引起的电压出现)。该装置由排列成线性阵列的几个热电偶组成。纳米和微米级热电偶（热结）是使用典型的Si兼容MEMS工艺制造的，该工艺通过聚焦离子束（FIB）铣削增强。测试了热接点的性能，专注于他们对覆盖近红外（NIR）辐射（λ=976nm）的IR辐射的敏感性。测量作为XY平面中的检测器位置的函数的输出电压。测量结果允许重建入射光束的高斯状强度分布。
