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Abstract：
We propose an ambipolar chitosan synaptic transistor that effectively responds to binary neuroplasticity. We fabricated the synaptic transistors by applying a chitosan electric double layer (EDL) to the gate insulator of the excimer laser annealed polycrystalline silicon (poly-Si) thin-film transistor (TFT) with Ni-silicide (NiSi) Schottky-barrier source/drain (S/D) junction. The undoped poly-Si channel and the NiSi S/D contact allowed conduction by electrons and holes, resulting in artificial synaptic behavior in both p-type and n-type regions. A slow polarization reaction by the mobile ions such as anions (CH3COO- and OH-) and cations (H+) in the chitosan EDL induced hysteresis window in the transfer characteristics of the ambipolar TFTs. We demonstrated the excitatory post-synaptic current modulations and stable conductance modulation through repetitive potentiation and depression pulse. We expect the proposed ambipolar chitosan synaptic transistor that responds effectively to both positive and negative stimulation signals to provide more complex information process versatility for bio-inspired neuromorphic computing systems.
摘要：
我们提出了一种有效响应二元神经可塑性的双极壳聚糖突触晶体管。我们通过将壳聚糖双电层（EDL）应用于具有Ni硅化物（NiSi）肖特基势垒源极/漏极（S/D）结的准分子激光退火多晶硅（poly-Si）薄膜晶体管（TFT）的栅极绝缘体来制造突触晶体管。未掺杂的多晶硅沟道和NiSiS/D接触允许电子和空穴传导，导致p型和n型区域的人工突触行为。壳聚糖EDL中的阴离子（CH3COO-和OH-）和阳离子（H）等可移动离子在双极TFT的转移特性中引起的缓慢极化反应。我们通过重复的增强和抑制脉冲证明了兴奋性突触后电流调制和稳定的电导调制。我们期望所提出的双极壳聚糖突触晶体管能够有效地响应正刺激信号和负刺激信号，从而为生物启发的神经形态计算系统提供更复杂的信息过程多功能性。
