Abstract:
Black silicon, which is an attractive material due to its optical properties, is prepared mainly by laser inducing in an SF6 atmosphere. Considering the effect of SF6 gas on the environment and human health, here we propose an efficient, economical, and green approach to process large-scale black silicon. In the wavelength range of 0.3-2.5 µm, the role of air could replace SF6 gas to texture black silicon by laser inducing with appropriate processing parameters. Then, to extend the working window of its excellent light-trapping status, laser-plasma shockwave cleaning was introduced to eliminate the deposition and improve the structures and morphology. The results revealed that the micro-nano structures became higher, denser, and more uniform with increasing cleaning times and deteriorating cleaning velocity, which compensated for the role of S atoms from the ambient SF6. Moreover, absorptance above 85% in the wavelength range of 0.3-15 µm was realized using our method. The effect of scanning pitch between adjacent rows on large-scale black silicon was also discussed. Our method realized the ultrahigh absorptance of large-scale black silicon fabricated in air from visible to mid-infrared, which is of significance in the field of optoelectronic devices.
摘要:
黑色硅,由于其光学特性,这是一种有吸引力的材料,主要通过在SF6气氛中激光诱导来制备。考虑到SF6气体对环境和人体健康的影响,在这里我们提出一个有效的,经济,和绿色方法来处理大规模的黑硅。在0.3-2.5µm的波长范围内,在适当的工艺参数下,通过激光诱导,空气的作用可以代替SF6气体对黑硅进行纹理化。然后,以扩展其出色的光捕获状态的工作窗口,引入激光等离子体冲击波清洗以消除沉积并改善结构和形貌。结果表明,微纳米结构变得更高,密度更大,随着清洁时间的增加和清洁速度的恶化,这补偿了环境SF6中S原子的作用。此外,使用我们的方法实现了在0.3-15µm波长范围内超过85%的吸收率。还讨论了相邻行之间的扫描间距对大规模黑硅的影响。我们的方法实现了从可见光到中红外在空气中制造的大型黑硅的超高吸收率,这在光电器件领域具有重要意义。