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Abstract：
The band alignment, interface states, interface coupling, and carrier transport of semiconductor heterojunctions (SHs) need to be well understood for the design and fabrication of various important semiconductor structures and devices. Scanning tunneling microscopy (STM) with high spatial resolution and scanning tunneling spectroscopy (STS) with high energy resolution are significantly contributing to the understanding on the important properties of SHs. In this work, the recent progress on the use of STM and STS to study lateral, vertical and bulk SHs is reviewed. The spatial structures of SHs with atomically flat surface have been examined with STM. The electronic band structures (e. g., the band offset, interface state, and space charge region) of SHs are measured with STS. Combined with the spatial structures and the tunneling spectra features, the mechanism for the carrier transport in the SH may be proposed.
摘要：
波段对齐，接口状态,接口耦合，对于各种重要的半导体结构和器件的设计和制造,需要很好地理解半导体异质结(SHs)的载流子传输。具有高空间分辨率的扫描隧道显微镜（STM）和具有高能量分辨率的扫描隧道光谱（STS）对于理解SHs的重要特性具有重要意义。在这项工作中,使用STM和STS研究横向的最新进展，审查了垂直和散装SHs。已使用STM检查了具有原子平坦表面的SHs的空间结构。电子能带结构（e。g.,波段偏移，接口状态,和空间电荷区）的SHs用STS测量。结合空间结构和隧道光谱特征,可以提出SH中载流子传输的机制。
