{Reference Type}: Journal Article
{Title}: Strong doping reduction on wafer-scale CVD graphene devices via Al2O3 ALD encapsulation.
{Author}: Dockx K;Barnes MD;Wehenkel DJ;van Rijn R;van der Zant HSJ;Buscema M;
{Journal}: Nanotechnology
{Volume}: 0
{Issue}: 0
{Year}: 2024 Jul 2
{Factor}: 3.953
{DOI}: 10.1088/1361-6528/ad5dbb
{Abstract}: We present the electrical characterization of wafer-scale graphene devices fabricated with an industrially-relevant, contact-first integration scheme combined with Al2O3 encapsulation via atomic layer deposition. All the devices show a statistically significant reduction in the Dirac point position, Vcnp, from around + 47V to between -5 and 5 V (on 285 nm SiO2), while maintaining the mobility values. The data and methods presented are relevant for further integration of graphene devices, specifically sensors, at the back-end-of-line of a standard CMOS flow.