{Reference Type}: Journal Article
{Title}: Atomically Resolved Defect-Engineering Scattering Potential in 2D Semiconductors.
{Author}: Chen HY;Hsu HC;Liang JY;Wu BH;Chen YF;Huang CC;Li MY;Radu IP;Chiu YP;
{Journal}: ACS Nano
{Volume}: 18
{Issue}: 27
{Year}: 2024 Jul 9
{Factor}: 18.027
{DOI}: 10.1021/acsnano.4c02066
{Abstract}: Engineering atomic-scale defects has become an important strategy for the future application of transition metal dichalcogenide (TMD) materials in next-generation electronic technologies. Thus, providing an atomic understanding of the electron-defect interactions and supporting defect engineering development to improve carrier transport is crucial to future TMDs technologies. In this work, we utilize low-temperature scanning tunneling microscopy/spectroscopy (LT-STM/S) to elicit how distinct types of defects bring forth scattering potential engineering based on intervalley quantum quasiparticle interference (QPI) in TMDs. Furthermore, quantifying the energy-dependent phase variation of the QPI standing wave reveals the detailed electron-defect interaction between the substitution-induced scattering potential and the carrier transport mechanism. By exploring the intrinsic electronic behavior of atomic-level defects to further understand how defects affect carrier transport in low-dimensional semiconductors, we offer potential technological applications that may contribute to the future expansion of TMDs.